Double particle resolution measured in a silicon drift chamber

The two-hit resolution of a silicon drift chamber is measured using a pulsed Nd: YAG laser and a time digitizer readout. The data is analyzed by forming the covariance matrix in time samples, and transforming to a matrix in amplitude and time variation of each of the two hits. The resolution on the two-hit separation is found to be better than 25 μm with a drift field of 530 V/cm and a separation of more than 500 μm, with the resolution increasing to 50 μm as the separation nears 500 μ. Results are also presented for multiply ionizing tracks, showing a great improvement over single minimum ionizin

Silicon drift devices for track and vertex detection at the SSC

We report on the recent progress in the study of Semiconductor Drift (Memory) Detectors intended for an inner tracking and vertexing system for the SSC. The systematic studies and the calibration of the existing detectors and the simulated performance in the actual SSC environment are highlighted. 5 refs., 22 figs., 1 tab