Description of superdeformed bands in light N=Z nuclei using the cranked HFB method

Superdeformed states in light $N=Z$ nuclei are studied by means of the self-consistent cranking calculation (i.e., the P + QQ model based on the cranked Hartree-Fock-Bogoliubov method). Analyses are given for two typical cases of superdeformed bands in the $A \simeq 40$ mass region, that is, bands where backbending is absent ($^{40}$Ca) and present ($^{36}$Ar). Investigations are carried out, particularly for the following points: cross-shell excitations in the sd and pf shells; the role of the g$_{9/2}$ and d$_{5/2}$ orbitals; the effect of the nuclear pairing; and the interplay between triaxiality and band termination.Comment: 17 pages, 18 figures, accepted in Phys. Rev.

Quasi-thermal Comptonization and gamma-ray bursts

Quasi-thermal Comptonization in internal shocks formed between relativistic shells can account for the high energy emission of gamma-ray bursts. This is in fact the dominant cooling mechanism if the typical energy of the emitting particles is achieved either through the balance between heating and cooling or as a result of electron-positron pair production. Both processes yield sub or mildly relativistic energies. In this case the synchrotron spectrum is self-absorbed, providing the seed soft photons for the Comptonization process, whose spectrum is flat [F(v) ~ const], ending either in an exponential cutoff or a Wien peak, depending on the scattering optical depth of the emitting particles. Self-consistent particle energy and optical depth are estimated and found in agreement with the observed spectra.Comment: 10 pages, ApJ Letters, accepted for publicatio

Kinetics of electron-positron pair plasmas using an adaptive Monte Carlo method

A new algorithm for implementing the adaptive Monte Carlo method is given. It is used to solve the relativistic Boltzmann equations that describe the time evolution of a nonequilibrium electron-positron pair plasma containing high-energy photons and pairs. The collision kernels for the photons as well as pairs are constructed for Compton scattering, pair annihilation and creation, bremsstrahlung, and Bhabha & Moller scattering. For a homogeneous and isotropic plasma, analytical equilibrium solutions are obtained in terms of the initial conditions. For two non-equilibrium models, the time evolution of the photon and pair spectra is determined using the new method. The asymptotic numerical solutions are found to be in a good agreement with the analytical equilibrium states. Astrophysical applications of this scheme are discussed.Comment: 43 pages, 7 postscript figures, to appear in the Astrophysical Journa

Money in monetary policy design: monetary cross-checking in the New-Keynesian model

In the New-Keynesian model, optimal interest rate policy under uncertainty is formulated without reference to monetary aggregates as long as certain standard assumptions on the distributions of unobservables are satisfied. The model has been criticized for failing to explain common trends in money growth and inflation, and that therefore money should be used as a cross-check in policy formulation (see Lucas (2007)). We show that the New-Keynesian model can explain such trends if one allows for the possibility of persistent central bank misperceptions. Such misperceptions motivate the search for policies that include additional robustness checks. In earlier work, we proposed an interest rate rule that is near-optimal in normal times but includes a cross-check with monetary information. In case of unusual monetary trends, interest rates are adjusted. In this paper, we show in detail how to derive the appropriate magnitude of the interest rate adjustment following a significant cross-check with monetary information, when the New-Keynesian model is the central bank’s preferred model. The cross-check is shown to be effective in offsetting persistent deviations of inflation due to central bank misperceptions. Keywords: Monetary Policy, New-Keynesian Model, Money, Quantity Theory, European Central Bank, Policy Under Uncertaint

Comparison of near-interface traps in Al2_2O3_3/4H-SiC and Al2_2O3_3/SiO2_2/4H-SiC structures

Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage and Thermal Dielectric Relaxation Current measurements, the interface properties have been investigated. Whereas for the samples with an interfacial SiO2 layer the highest near-interface trap density is found at 0.3 eV below the conduction band edge, Ec, the samples with only the Al2O3 dielectric exhibit a nearly trap free region close to Ec. For the Al2O3/SiC interface, the highest trap density appears between 0.4 to 0.6 eV below Ec. The results indicate the possibility for SiC-based MOSFETs with Al2O3 as the gate dielectric layer in future high performance devices.Comment: 3 figures. Applied Physics Letters, accepted for publicatio

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon–interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV ₁₁B ions, the peak of the interstitial profile is displaced by ∼0.5 μm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.Financial support was kindly provided by the Swedish Research Council for Engineering Sciences (TFR), the Swedish Foundation for International Cooperation in Research and Higher Education (STINT), and the EU Commission, Contract No. ERBFMRXCT980208 (ENDEASD—TMR network)

Hydrogen induced optically-active defects in silicon photonic nanocavities

This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project. Partial financial support by the Norwegian Research Council is also acknowledged.We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.Publisher PDFPeer reviewe

InAs nanowire transistors with multiple, independent wrap-gate segments

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.Comment: 18 pages, 5 figures, In press for Nano Letters (DOI below

A comparative study of super- and highly-deformed bands in the A ~ 60 mass region

Super- and highly-deformed rotational bands in the A ~ 60 mass region are studied within cranked relativistic mean field theory and the configuration-dependent shell-correction approach based on the cranked Nilsson potential. Both approaches describe the experimental data well. Low values of the dynamic moments of inertia J^(2) compared with the kinematic moments of inertia J^(1) seen both in experiment and in calculations at high rotational frequencies indicate the high energy cost to build the states at high spin and reflect the limited angular momentum content in these configurations.Comment: 11 pages, 4 PostScript figures, Latex, uses 'epsf', submitted to Phys. Lett.

High Energy Break and Reflection Features in the Seyfert Galaxy MCG+8-11-11

We present the results from ASCA and OSSE simultaneous observations of the Seyfert 1.5 galaxy MCG+8-11-11 performed in August-September 1995. The ASCA observations indicate a modest flux increase (20%) in 3 days, possibly correlated to a softening of the 0.6-9 keV spectrum. The spectrum is well described by a hard power law (Gamma=1.64) absorbed by a column density slightly larger than the Galactic value, with an iron line at 6.4 keV of EW=400 eV. The simultaneous OSSE data are characterized by a much softer power law with photon index Gamma=3.0, strongly suggesting the presence of a spectral break in the hard X/soft gamma-ray band. A joint fit to OSSE and ASCA data clearly shows an exponential cut-off at about 300 keV, and strong reflection component. MCG+8-11-11 features a spectral break in the underlying continuum unambiguously. This, together with the inferred low compactness of this source, favours thermal or quasi-thermal electron Comptonization in a structured Corona as the leading process of high energy radiation production.Comment: 13 pages, + 4 figure.ps AAS LateX [11pt,aasms4]{article} To be published in ApJ, Main Journa