390 research outputs found
Directional Roll-up of Nanomembranes Mediated by Wrinkling
We investigate the relaxation of rectangular wrinkled thin films
intrinsically containing an initial strain gradient. A preferential rolling
direction, depending on wrinkle geometry and strain gradient, is theoretically
predicted and experimentally verified. In contrast to typical rolled-up
nanomembranes, which bend perpendicular to the longer edge of rectangular
patterns, we find a regime where rolling parallel to the long edge of the
wrinkled film is favorable. A non-uniform radius of the rolled-up film is well
reproduced by elasticity theory and simulations of the film relaxation using a
finite element method.Comment: 4 pages, 4 figure
Countable Random Sets: Uniqueness in Law and Constructiveness
The first part of this article deals with theorems on uniqueness in law for
\sigma-finite and constructive countable random sets, which in contrast to the
usual assumptions may have points of accumulation. We discuss and compare two
approaches on uniqueness theorems: First, the study of generators for
\sigma-fields used in this context and, secondly, the analysis of hitting
functions. The last section of this paper deals with the notion of
constructiveness. We will prove a measurable selection theorem and a
decomposition theorem for constructive countable random sets, and study
constructive countable random sets with independent increments.Comment: Published in Journal of Theoretical Probability
(http://www.springerlink.com/content/0894-9840/). The final publication is
available at http://www.springerlink.co
Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction
Calculations of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe tunneling junction attached to an n-type GaAs lead, under positive gate voltage, are presented. It is shown that for realistic GaAs carrier densities the TMR of this composite system can be more than 2 orders of magnitude higher than that of a conventional Fe/MgO/Fe junction. Furthermore, the high TMR is achieved with modest MgO thicknesses and is very robust to disorder at the Fe/GaAs interface and within the GaAs layer itself. The significant practical advantage of this system is that huge TMRs should be attainable for junctions with modest resistances. For a GaAs carrier density of 1019??cm-3 the system is calculated to have a TMR in excess of 10?000% but its resistance is equivalent to that of a conventional Fe/MgO/Fe junction with only 6–7 at. planes of MgO
Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs
Electron-spin relaxation at different surfaces of p-doped GaAs is
investigated by means of spin, time and energy resolved 2-photon photoemission.
These results are contrasted with bulk results obtained by time-resolved
Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus
spin-flip mechanism. Due to the reduced hole density in the band bending region
at the (100) surface the spin-relaxation time increases over two orders of
magnitude towards lower energies. At the flat-band (011) surface a constant
spin relaxation time in agreement with our measurements and calculations for
bulk GaAs is obtained.Comment: 6 pages, 4 figure
A model for single electron decays from a strongly isolated quantum dot
Recent measurements of electron escape from a non-equilibrium charged quantum
dot are interpreted within a 2D separable model. The confining potential is
derived from 3D self-consistent Poisson-Thomas-Fermi calculations. It is found
that the sequence of decay lifetimes provides a sensitive test of the confining
potential and its dependence on electron occupation.Comment: 9 pages, 10 figure
Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)
The atomic and electronic structure of positively charged P vacancies on
InP(110) surfaces is determined by combining scanning tunneling microscopy,
photoelectron spectroscopy, and density-functional theory calculations. The
vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge
transfer level 0.75+-0.1 eV above the valence band maximum. The scanning
tunneling microscopy (STM) images show only a time average of two degenerate
geometries, due to a thermal flip motion between the mirror configurations.
This leads to an apparently symmetric STM image, although the ground state
atomic structure is nonsymmetric.Comment: 5 pages including 3 figures. related publications can be found at
http://www.fhi-berlin.mpg.de/th/paper.htm
Rolled-up tubes and cantilevers by releasing SrRuO3-Pr0.7Ca0.3MnO3 nanomembranes
Three-dimensional micro-objects are fabricated by the controlled release of inherently strained SrRuO3/Pr0.7Ca0.3MnO3/SrRuO3 nanometer-sized trilayers from SrTiO3(001) substrates. Freestanding cantilevers and rolled-up microtubes with a diameter of 6 to 8 μm are demonstrated. The etching behavior of the SrRuO3 film is investigated, and a selectivity of 1:9,100 with respect to the SrTiO3 substrate is found. The initial and final strain states of the rolled-up oxide layers are studied by X-ray diffraction on an ensemble of tubes. Relaxation of the sandwiched Pr0.7Ca0.3MnO3 layer towards its bulk lattice parameter is observed as the major driving force for the roll-up of the trilayers. Finally, μ-diffraction experiments reveal that a single object can represent the ensemble proving a good homogeneity of the rolled-up tubes
Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures
The boundary conditions, customarily used in the Landau-type approach to
ferroelectric thin films and nanostructures, have to be modified to take into
account that a surface of a ferroelectric (FE) is a defect of the ``field''
type. The surface (interface) field is coupled to a normal component of
polarization and, as a result, the second order phase transitions are generally
suppressed and anomalies in response are washed out. In FE films with a
compositional (grading) or some other type of inhomogeneity, the transition
into a monodomain state is suppressed, but a transition with formation of a
domain structure may occur.Comment: 5 pages, 1 figure; the effective bias field is very large, the
estimate is adde
Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions
A general formulation of boundary conditions for semiconductor-metal contacts
follows from a phenomenological procedure sketched here. The resulting boundary
conditions, which incorporate only physically well-defined parameters, are used
to study the classical unipolar drift-diffusion model for the Gunn effect. The
analysis of its stationary solutions reveals the presence of bistability and
hysteresis for a certain range of contact parameters. Several types of Gunn
effect are predicted to occur in the model, when no stable stationary solution
exists, depending on the value of the parameters of the injecting contact
appearing in the boundary condition. In this way, the critical role played by
contacts in the Gunn effect is clearly stablished.Comment: 10 pages, 6 Post-Script figure
Charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling
Motivated by the recent experimental evidence of commensurate surface charge
density waves (CDW) in Pb/Ge(111) and Sn/Ge(111) sqrt{3}-adlayer structures, as
well as by the insulating states found on K/Si(111):B and SiC(0001), we have
investigated the role of electron-electron interactions, and also of
electron-phonon coupling, on the narrow surface state band originating from the
outer dangling bond orbitals of the surface. We model the sqrt{3} dangling bond
lattice by an extended two-dimensional Hubbard model at half-filling on a
triangular lattice. We include an on-site Hubbard repulsion U and a
nearest-neighbor Coulomb interaction V, plus a long-ranged Coulomb tail. The
electron-phonon interaction is treated in the deformation potential
approximation. We have explored the phase diagram of this model including the
possibility of commensurate 3x3 phases, using mainly the Hartree-Fock
approximation. For U larger than the bandwidth we find a non-collinear
antiferromagnetic SDW insulator, possibly corresponding to the situation on the
SiC and K/Si surfaces. For U comparable or smaller, a rich phase diagram
arises, with several phases involving combinations of charge and
spin-density-waves (SDW), with or without a net magnetization. We find that
insulating, or partly metallic 3x3 CDW phases can be stabilized by two
different physical mechanisms. One is the inter-site repulsion V, that together
with electron-phonon coupling can lower the energy of a charge modulation. The
other is a novel magnetically-induced Fermi surface nesting, stabilizing a net
cell magnetization of 1/3, plus a collinear SDW, plus an associated weak CDW.
Comparison with available experimental evidence, and also with first-principle
calculations is made.Comment: 11 pages, 9 figure
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