2,926 research outputs found
Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates
The properties of graphene nanoribbons are dependent on both the nanoribbon width and the crystallographic orientation of the edges. Scanning tunneling microscope lithography is a method which is able to create graphene nanoribbons with well defined edge orientation, having a width of a few nanometers. However, it has only been demonstrated on the top layer of graphite. In order to allow practical applications of this powerful lithography technique, it needs to be implemented on single layer graphene. We demonstrate the preparation of graphene nanoribbons with well defined crystallographic orientation on top of gold substrates. Our transfer and lithography approach brings one step closer the preparation of well defined graphene nanoribbons on arbitrary substrates for nanoelectronic applications
Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
Graphene holds great promise for post-silicon electronics, however, it faces
two main challenges: opening up a bandgap and finding a suitable substrate
material. In principle, graphene on hexagonal boron nitride (hBN) substrate
provides potential system to overcome these challenges. Recent theoretical and
experimental studies have provided conflicting results: while theoretical
studies suggested a possibility of a finite bandgap of graphene on hBN, recent
experimental studies find no bandgap. Using the first-principles density
functional method and the many-body perturbation theory, we have studied
graphene on hBN substrate. A Bernal stacked graphene on hBN has a bandgap on
the order of 0.1 eV, which disappears when graphene is misaligned with respect
to hBN. The latter is the likely scenario in realistic devices. In contrast, if
graphene supported on hBN is hydrogenated, the resulting system (graphone)
exhibits bandgaps larger than 2.5 eV. While the bandgap opening in graphene/hBN
is due to symmetry breaking and is vulnerable to slight perturbation such as
misalignment, the graphone bandgap is due to chemical functionalization and is
robust in the presence of misalignment. The bandgap of graphone reduces by
about 1 eV when it is supported on hBN due to the polarization effects at the
graphone/hBN interface. The band offsets at graphone/hBN interface indicate
that hBN can be used not only as a substrate but also as a dielectric in the
field effect devices employing graphone as a channel material. Our study could
open up new way of bandgap engineering in graphene based nanostructures.Comment: 8 pages, 4 figures; Nano Letters, Publication Date (Web): Oct. 25
2011, http://pubs.acs.org/doi/abs/10.1021/nl202725
Band gap opening by two-dimensional manifestation of Peierls instability in graphene
Using first-principles calculations of graphene having high-symmetry
distortion or defects, we investigate band gap opening by chiral symmetry
breaking, or intervalley mixing, in graphene and show an intuitive picture of
understanding the gap opening in terms of local bonding and antibonding
hybridizations. We identify that the gap opening by chiral symmetry breaking in
honeycomb lattices is an ideal two-dimensional (2D) extension of the Peierls
metal-insulator transition in 1D linear lattices. We show that the spontaneous
Kekule distortion, a 2D version of the Peierls distortion, takes place in
biaxially strained graphene, leading to structural failure. We also show that
the gap opening in graphene antidots and armchair nanoribbons, which has been
attributed usually to quantum confinement effects, can be understood with the
chiral symmetry breaking
Group-IV graphene- and graphane-like nanosheets
We performed a first principles investigation on the structural and
electronic properties of group-IV (C, SiC, Si, Ge, and Sn) graphene-like sheets
in flat and buckled configurations and the respective hydrogenated or
fluorinated graphane-like ones. The analysis on the energetics, associated with
the formation of those structures, showed that fluorinated graphane-like sheets
are very stable, and should be easily synthesized in laboratory. We also
studied the changes on the properties of the graphene-like sheets, as result of
hydrogenation or fluorination. The interatomic distances in those graphane-like
sheets are consistent with the respective crystalline ones, a property that may
facilitate integration of those sheets within three-dimensional nanodevices
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
The unique property of bilayer graphene to show a band gap tunable by
external electrical fields enables a variety of different device concepts with
novel functionalities for electronic, optoelectronic and sensor applications.
So far the operation of bilayer graphene based field effect transistors
requires two individual gates to vary the channel's conductance and to create a
band gap. In this paper we report on a method to increase the on/off ratio in
single gated bilayer graphene field effect transistors by adsorbate doping. The
adsorbate dopants on the upper side of the graphene establish a displacement
field perpendicular to the graphene surface breaking the inversion symmetry of
the two graphene layers. Low temperature measurements indicate, that the
increased on/off ratio is caused by the opening of a mobility gap. Beside field
effect transistors the presented approach can also be employed for other
bilayer graphene based devices like photodetectors for THz to infrared
radiation, chemical sensors and in more sophisticated structures such as
antidot- or superlattices where an artificial potential landscape has to be
created.Comment: 4 pages, 4 figure
The Impact of Private Versus Social Health Insurance on Offered Waiting Times in German Acute Care Hospitals
Effect of Layer-Stacking on the Electronic Structure of Graphene Nanoribbons
The evolution of electronic structure of graphene nanoribbons (GNRs) as a
function of the number of layers stacked together is investigated using
\textit{ab initio} density functional theory (DFT) including interlayer van der
Waals interactions. Multilayer armchair GNRs (AGNRs), similar to single-layer
AGNRs, exhibit three classes of band gaps depending on their width. In zigzag
GNRs (ZGNRs), the geometry relaxation resulting from interlayer interactions
plays a crucial role in determining the magnetic polarization and the band
structure. The antiferromagnetic (AF) interlayer coupling is more stable
compared to the ferromagnetic (FM) interlayer coupling. ZGNRs with the AF
in-layer and AF interlayer coupling have a finite band gap while ZGNRs with the
FM in-layer and AF interlayer coupling do not have a band gap. The ground state
of the bi-layer ZGNR is non-magnetic with a small but finite band gap. The
magnetic ordering is less stable in multilayer ZGNRs compared to single-layer
ZGNRs. The quasipartcle GW corrections are smaller for bilayer GNRs compared to
single-layer GNRs because of the reduced Coulomb effects in bilayer GNRs
compared to single-layer GNRs.Comment: 10 pages, 5 figure
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How large are projected 21st century storm track changes?
Projected changes in the extra-tropical wintertime storm tracks are investigated using the multi-model ensembles from both the third and fifth phases of the World Climate Research Programme's Coupled Model Intercomparison Project (CMIP3 and CMIP5). The aim is to characterize the magnitude of the storm track responses relative to their present-day year-to-year variability. For the experiments considered, the ‘middle-of-the-road’ scenarios in each CMIP, there are regions of the Northern Hemisphere where the responses of up to 40% of the models exceed half of the inter-annual variability, and for the Southern Hemisphere there are regions where up to 60% of the model responses exceed half of the inter-annual variability
Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors
It is promising to apply quantum-mechanically confined graphene systems in
field-effect transistors. High stability, superior performance, and large-scale
integration are the main challenges facing the practical application of
graphene transistors. Our understandings of the adatom-graphene interaction
combined with recent progress in the nanofabrication technology indicate that
very stable and high-quality graphene nanostripes could be integrated in
substrate-supported functionalized (hydrogenated or fluorinated) graphene using
electron-beam lithography. We also propose that parallelizing a couple of
graphene nanostripes in a transistor should be preferred for practical
application, which is also very useful for transistors based on graphene
nanoribbon.Comment: Frontiers of Physics (2012) to be publishe
Determination of the Michel Parameters rho, xi, and delta in tau-Lepton Decays with tau --> rho nu Tags
Using the ARGUS detector at the storage ring DORIS II, we have
measured the Michel parameters , , and for
decays in -pair events produced at
center of mass energies in the region of the resonances. Using
as spin analyzing tags, we find , , , , and . In addition, we report
the combined ARGUS results on , , and using this work
und previous measurements.Comment: 10 pages, well formatted postscript can be found at
http://pktw06.phy.tu-dresden.de/iktp/pub/desy97-194.p
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