1,520 research outputs found

    Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

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    We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge carriers, inside the scCVD diamond sample, are excited by a femtosecond laser through simultaneous absorption of two photons. Due to the nature of two-photon absorption, the generation of charge carriers is confined in space (3-D) around the focal point of the laser. Such localized charge injection allows to probe the charge transport properties of the semiconductor bulk with a fine-grained 3-D resolution. Exploiting spatial confinement of the generated charge, the electrical field of the diamond bulk was mapped at different depths and compared to an X-ray diffraction topograph of the sample. Measurements utilizing this method provide a unique way of exploring spatial variations of charge transport properties in transparent wide-bandgap semiconductors.Comment: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.509085

    Bias dependence and bistability of radiation defects in silicon

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    Influence of bias on effective dopant concentration in neutron and pion irradiatedp+nn+p^+ - n - n^+ diodes has been measured. Detailed studies of annealing of the bias-induced damagehave revealed three components, with introduction rates from 0.005 to 0.008 cm1^{-1} andannealing time constants ranging from 5 to 1000 hours at 20^\circC. Variation of annealing temperatures yielded activation energies around 1 eV for all the three components. Bistable behavior of radiation damage under bias has been observed and its activation and annealingstudied. The bistable damage was associated to the fastest annealing component of bias-induced damage.Using the parameterization obtained, a prediction for ATLAS SCT operation was made.Bias-induced damage is shown to require an additional 80 V to fully deplete detectors at the end of LHC operation

    Large-scale analysis of cell cycle regulators in urothelial bladder cancer identifies p16 and p27 as potentially useful prognostic markers

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    AIMS: We investigated the value of multiple cell cycle markers for their prognostic impact on overall survival and recurrence-free survival in urothelial carcinoma (UC). METHODS: A tissue microarray consisting of 99 UCs was evaluated for the expression of p53, p16, p21, p27, cyclin D1, cyclin E , Bcl-2, Ki-67 and PCNA. Statistical analysis was performed applying Kaplan-Meier and Cox regression models using receiver operator characteristic curves for determination of markers' cutoffs. RESULTS: Expression above the cutoffs of Ki-67, p53 and p27, particularly in high-grade and early-stage UC, was associated with worse overall survival, while expression of p16 indicated a better outcome in low-grade and low-stage tumors. Recurrence-free survival was better in patients with high-grade UC expressing PCNA, p16 and cyclin E, and low-grade UC expressing Bcl-2 above the cutoffs, but worse in all tumors with high Ki-67. CONCLUSION: Cell cycle deregulation in UC is complex and the prognostic value of the various involved proteins should be differentially regarded with respect to this complexity and other tumor characteristics such as grade and stage. Our results point towards the role of p16- and p27-associated pathways in tumor progression and indicate that, by using standardized approaches for tissue antigen expression, evaluation and cutoff determination, single potentially useful prognostic markers could be identified

    Radiation Hardness of Thin Low Gain Avalanche Detectors

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    Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors

    Using Early Data to Illuminate the Pioneer Anomaly

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    Analysis of the radio tracking data from the Pioneer 10/11 spacecraft at distances between about 20 - 70 AU from the Sun has consistently indicated the presence of an unmodeled, small, constant, Doppler blue shift drift of order 6 \times 10^{-9} Hz/s. After accounting for systematics, this drift can be interpreted as a constant acceleration of a_P= (8.74 \pm 1.33) \times 10^{-8} cm/s^2 directed towards the Sun, or perhaps as a time acceleration of a_t = (2.92 \pm 0.44)\times 10^{-18} s/s^2. Although it is suspected that there is a systematic origin to this anomaly, none has been unambiguously demonstrated. We review the current status of the anomaly, and then point out how the analysis of early data, which was never analyzed in detail, could allow a more clear understanding of the origin of the anomaly, be it a systematic or a manifestation of unsuspected physics.Comment: 19 pages, 6 figures, 2 tables, additional materia

    Performance of a 128 channel analogue front-end chip for read-out of Si strip detector modules for LHC experiments

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    We present a 128-channel analogue front-end chip, SCT128A-HC, for readout of silicon strip detectors employed in the inner tracking detectors of the LHC experiment. The chip is produced in the radiation hard DMILL technology. The architecture of the chip and critical design issues are discussed. The performance of the chip has been evaluated in details in the test bench and is presented in the paper. The chip is used to read out prototype analogue modules compatible in size, functionality and performance with the ATLAS SCT base line modules. Several full size detector modules equipped with SCT128A-HC chips has been built and tested successfully in the lab with beta particles as well as in the test beam. The results concerning the signal-to-noise ratio, noise occupancy, efficiency and spatial resolution are presented. The radiation hardness issues are discussed. (5 refs)

    Analogue read-out chip for Si strip detector modules for LHC experiments

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    We present a 128-channel analogue front-end chip SCTA128 for readout of silicon strip detectors employed in the inner tracking detectors of LHC experiments. The architecture of the chip and critical design issues are discussed. The performance of the chip has been evaluated in detail in bench tests and is presented in the paper. The chip is used to read out prototype analogue modules compatible in size, functionality and performance with the ATLAS SCT base line modules. Several full size detector modules equipped with SCTA128 chips have been built and tested successfully in the lab with E particles as well as in beam tests
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