Localized vibration modes of defect pairs in silicon

Absorption bands and localized vibrational modes of silicon doped with boron compounds containing phosphorus, arsenic, antimony, or lithiu

Signs as deterrents of illegal parking in spaces designated for individuals with physical disabilities.

The percentage of illegal parking in spaces reserved for the physically disabled was monitored under three sign conditions: ground markings, ground markings plus vertical signs, and vertical signs containing a message that concerned citizens were watching the spaces. Illegal parking dropped from 69.3% of 102 vehides during the initial ground-sign condition to 57.3% of 36 vehides in the first vertical-sign condition. Following removal of the vertical signs, illegal parking increased to 68.7% of 43 vehides. During the second vertical-sign condition, illegal parking dropped to 53.7% of 32 vehides, followed by an increase to 69.5% of 68 vehides after the vertical signs were removed. The lowest rate of illegal parking (27.1% of 78 vehides) occurred in the vertical-sign-plus-message condition. Illegal parking subsequently increased to 34.6% (of 94 vehides) when the message sign was removed, followed by an increase to 65.2% (of 105 vehides) when the vertical signs were removed. Originally published Journal of Applied Behavior Analysis, Vol. 24, No. 1, Spring 199

Anonymous shell companies: A global audit study and field experiment in 176 countries

To test whether firms behave consistently with international law prohibiting anonymous incorporation, we conducted a global audit study and field experiment, using data from 1639 incorporation firms in 176 countries. We requested anonymous incorporation and randomly assigned references to international law, threat of penalties, norms of appropriate behavior, or a placebo. We find a substantial number of firms willing to flout international standards and show that those in OECD countries proved significantly less compliant with rules than in developing countries or tax havens. Firms in tax havens displayed significantly greater compliance and were sensitive to experimental interventions invoking international law

Solar Ellerman Bombs in 1D Radiative Hydrodynamics

Recent observations from the Interface Region Imaging Spectrograph (IRIS) appear to show impulsive brightenings in high temperature lines, which when combined with simultaneous ground based observations in H$\alpha$, appear co-spatial to Ellerman Bombs (EBs). We use the RADYN 1-dimensional radiative transfer code in an attempt to try and reproduce the observed line profiles and simulate the atmospheric conditions of these events. Combined with the MULTI/RH line synthesis codes, we compute the H$\alpha$, Ca II 8542~\AA, and Mg II h \& k lines for these simulated events and compare them to previous observations. Our findings hint that the presence of superheated regions in the photosphere ($>$10,000 K) is not a plausible explanation for the production of EB signatures. While we are able to recreate EB-like line profiles in H$\alpha$, Ca II 8542~\AA, and Mg II h \& k, we cannot achieve agreement with all of these simultaneously.Comment: Accepted into ApJL. 4 Figures, 1 Tabl

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies