Strong-field terahertz-optical mixing in excitons

Driving a double-quantum-well excitonic intersubband resonance with a terahertz (THz) electric field of frequency \omega_{THz} generated terahertz optical sidebands \omega=\omega_{THz}+\omega_{NIR} on a weak NIR probe. At high THz intensities, the intersubband dipole energy which coupled two excitons was comparable to the THz photon energy. In this strong-field regime the sideband intensity displayed a non-monotonic dependence on the THz field strength. The oscillating refractive index which gives rise to the sidebands may be understood by the formation of Floquet states, which oscillate with the same periodicity as the driving THz field.Comment: 4 pages, 6 figure

Light emission from direct band gap germanium containing split-interstitial defects

The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the main bottleneck for complementary metal-oxide semiconductor-compatible short-distance data transmission, single-photon emission, and sensing based on silicon photonics. Germanium, a group-IV element like Si, is already widely used in silicon fabs. While the energy band gap of Ge is intrinsically indirect, we predict that the insertion of Ge-Ge split-[110] interstitials into crystalline Ge can open up a direct band gap transmission path. Here, we calculate from first principles the band structure and optical emission properties of Ge, Sb, and Sn split-[110] interstitials in bulk and low-dimensional Ge at different doping concentrations. Two types of electronic states provide the light-emission enhancement below the direct band gap of Ge: a hybridized L-Γ state at the Brillouin zone center and a conduction band of Δ band character that couples to a raised valence band along the Γ-X direction. Majority carrier introduced to the system through doping can enhance light emission by saturation of nonradiative paths. Ge-Sn split interstitials in Ge shift the top of the valence band towards the Γ-X direction and increase the Γ character of the L-Γ state, which results in a shift to longer emission wavelengths. Key spectral regions for datacom and sensing applications can be covered by applying quantum confinement in defect-enhanced Ge quantum dots for an emission wavelength shift from the midinfrared to the telecom regime.FWN – Publicaties zonder aanstelling Universiteit Leide

Non-perturbative electron dynamics in crossed fields

Intense AC electric fields on semiconductor structures have been studied in photon-assisted tunneling experiments with magnetic field applied either parallel (B_par) or perpendicular (B_per) to the interfaces. We examine here the electron dynamics in a double quantum well when intense AC electric fields F, and tilted magnetic fields are applied simultaneously. The problem is treated non-perturbatively by a time-dependent Hamiltonian in the effective mass approximation, and using a Floquet-Fourier formalism. For B_par=0, the quasi-energy spectra show two types of crossings: those related to different Landau levels, and those associated to dynamic localization (DL), where the electron is confined to one of the wells, despite the non-negligible tunneling between wells. B_par couples parallel and in-plane motions producing anti-crossings in the spectrum. However, since our approach is non-perturbative, we are able to explore the entire frequency range. For high frequencies, we reproduce the well known results of perfect DL given by zeroes of a Bessel function. We find also that the system exhibits DL at the same values of the field F, even as B_par non-zero, suggesting a hidden dynamical symmetry in the system which we identify with different parity operations. The return times for the electron at various values of field exhibit interesting and complex behavior which is also studied in detail. We find that smaller frequencies shifts the DL points to lower field F, and more importantly, yields poorer localization by the field. We analyze the explicit time evolution of the system, monitoring the elapsed time to return to a given well for each Landau level, and find non-monotonic behavior for decreasing frequencies.Comment: REVTEX4 + 11 eps figs, submitted to Phys. Rev.

Coupling of Semiconductor Nanowires with Neurons and Their Interfacial Structure

We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron–nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft

On the way to large-scale and high-resolution brain-chip interfacing

Brain-chip-interfaces (BCHIs) are hybrid entities where chips and nerve cells establish a close physical interaction allowing the transfer of information in one or both directions. Typical examples are represented by multi-site-recording chips interfaced to cultured neurons, cultured/acute brain slices, or implanted “in vivo”. This paper provides an overview on recent achievements in our laboratory in the field of BCHIs leading to enhancement of signals transmission from nerve cells to chip or from chip to nerve cells with an emphasis on in vivo interfacing, either in terms of signal-to-noise ratio or of spatiotemporal resolution. Oxide-insulated chips featuring large-scale and high-resolution arrays of stimulation and recording elements are presented as a promising technology for high spatiotemporal resolution interfacing, as recently demonstrated by recordings obtained from hippocampal slices and brain cortex in implanted animals. Finally, we report on an automated tool for processing and analysis of acquired signals by BCHIs

Axonal Transmission in the Retina Introduces a Small Dispersion of Relative Timing in the Ganglion Cell Population Response

Background: Visual stimuli elicit action potentials in tens of different retinal ganglion cells. Each ganglion cell type responds with a different latency to a given stimulus, thus transforming the high-dimensional input into a temporal neural code. The timing of the first spikes between different retinal projection neurons cells may further change along axonal transmission. The purpose of this study is to investigate if intraretinal conduction velocity leads to a synchronization or dispersion of the population signal leaving the eye. Methodology/Principal Findings: We 'imaged' the initiation and transmission of light-evoked action potentials along individual axons in the rabbit retina at micron-scale resolution using a high-density multi-transistor array. We measured unimodal conduction velocity distributions (1.3 +/- 0.3 m/sec, mean +/- SD) for axonal populations at all retinal eccentricities with the exception of the central part that contains myelinated axons. The velocity variance within each piece of retina is caused by ganglion cell types that show narrower and slightly different average velocity tuning. Ganglion cells of the same type respond with similar latency to spatially homogenous stimuli and conduct with similar velocity. For ganglion cells of different type intraretinal conduction velocity and response latency to flashed stimuli are negatively correlated, indicating that differences in first spike timing increase (up to 10 msec). Similarly, the analysis of pair-wise correlated activity in response to white-noise stimuli reveals that conduction velocity and response latency are negatively correlated. Conclusion/Significance: Intraretinal conduction does not change the relative spike timing between ganglion cells of the same type but increases spike timing differences among ganglion cells of different type. The fastest retinal ganglion cells therefore act as indicators of new stimuli for postsynaptic neurons. The intraretinal dispersion of the population activity will not be compensated by variability in extraretinal conduction times, estimated from data in the literature

Enzymes immobilized in Langmuir-Blodgett films: Why determining the surface properties in Langmuir monolayer is important?

ABSTRACT In this review we discuss about the immobilization of enzymes in Langmuir-Blodgett films in order to determine the catalytic properties of these biomacromolecules when adsorbed on solid supports. Usually, the conformation of enzymes depends on the environmental conditions imposed to them, including the chemical composition of the matrix, and the morphology and thickness of the film. In this review, we show an outline of manuscripts that report the immobilization of enzymes as LB films since the 1980’s, and also some examples of how the surface properties of the floating monolayer prepared previously to the transfer to the solid support are important to determine the efficiency of the resulting device

¿Psicología de la Educación o Psicología Escolar? Esa es la cuestión

Este artigo apresenta alguns dados oriundos da tese de doutorado sobre a história do campo de conhecimento e prática da Psicologia em sua relação com a Educação no Brasil. Este estudo foi conduzido baseado no fundamento epistêmico-filosófico do materialismo histórico dialético e na nova história, utilizando fontes bibliográficas históricas e cinco relatos orais de personagens da Psicologia Educacional e Escolar. Os depoimentos e o material das fontes escritas constituíram o corpus documental cuja organização seguiu a metodologia da história oral e historiografia plural. Foi realizada análise descritivo-analítica compreendida em duas etapas: a) análise documental (fontes não orais) e b) construção de indicadores e núcleos de significação dos registros orais. A partir das análises, compôs-se uma periodização da história da Psicologia Educacional e Escolar brasileira por meio de marcos históricos da área. No presente artigo destaca-se a discussão acerca da conceituação e terminologias utilizadas pela Psicologia Educacional e Escolar ao longo do tempo e de como essas mudanças nas nomenclaturas da área refletem questões epistemológicas, ideológicas e políticas