153 research outputs found

    In Search of the Executive Cognitive Processes Proposed by Process-Overlap Theory

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    Process-Overlap Theory (POT) suggests that measures of cognitive abilities sample from sets of independent cognitive processes. These cognitive processes can be separated into domain-general executive processes, sampled by the majority of cognitive ability measures, and domain-specific processes, sampled only by measures within a certain domain. According to POT, fluid intelligence measures are related because different tests sample similar domain-general executive cognitive processes to some extent. Re-analyzing data from a study by De Simoni and von Bastian (2018), we assessed domain-general variance from executive processing tasks measuring inhibition, shifting, and efficiency of removal from working memory, as well as examined their relation to a domain-general factor extracted from fluid intelligence measures. The results showed that domain-general factors reflecting general processing speed were moderately and negatively correlated with the domain-general fluid intelligence factor (r = -.17--.36). However, domain-general factors isolating variance specific to inhibition, shifting, and removal showed only small and inconsistent correlations with the domain-general fluid intelligence factor (r = .02--.22). These findings suggest that (1) executive processing tasks sample only few domain-general executive processes also sampled by fluid intelligence measures, as well as (2) that domain-general speed of processing contributes more strongly to individual differences in fluid intelligence than do domain-general executive processes. Keywords: Process-Overlap Theory; executive processes; intelligence; processing speed; working memor

    Ultrafast far-infrared optics of carbon nanotubes

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    The optical properties of single-wall carbon nanotube sheets in the far-infrared (FIR) spectral range from few THz to several tens of THz have been investigated with terahertz spectroscopy both with static measurements elucidating the absorption mechanism in the FIR and with time-resolved experiments yielding information on the charge carrier dynamics after optical excitation of the nanotubes. We observe an overall depletion of the dominating broad absorption peak at around 4THz when the nanotubes are excited by a short visible laser pulse. This finding excludes particle-plasmon resonances as absorption mechanism and instead shows that interband transitions in tubes with an energy gap of ~10meV govern the far-infrared conductivity. A simple model based on an ensemble of two-level systems naturally explains the weak temperature dependence of the far-infrared conductivity by the tube-to-tube variation of the chemical potential. Furthermore, the time-resolved measurements do not show any evidence of a distinct free-carrier response which is attributed to the photogeneration of strongly bound excitons in the tubes with large energy gaps. The rapid decay of a featureless background with pronounced dichroism is associated with the increased absorption of spatially localized charge carriers before thermalization is completed

    In search of the executive cognitive processes proposed by process-overlap theory

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    Process-Overlap Theory (POT) suggests that measures of cognitive abilities sample from sets of independent cognitive processes. These cognitive processes can be separated into domain-general executive processes, sampled by the majority of cognitive ability measures, and domain-specific processes, sampled only by measures within a certain domain. According to POT, fluid intelligence measures are related because different tests sample similar domain-general executive cognitive processes to some extent. Re-analyzing data from a study by De Simoni and von Bastian (2018), we assessed domain-general variance from executive processing tasks measuring inhibition, shifting, and efficiency of removal from working memory, as well as examined their relation to a domain-general factor extracted from fluid intelligence measures. The results showed that domain-general factors reflecting general processing speed were moderately and negatively correlated with the domain-general fluid intelligence factor (r = −.17–−.36). However, domain-general factors isolating variance specific to inhibition, shifting, and removal showed only small and inconsistent correlations with the domain-general fluid intelligence factor (r = .02–−.22). These findings suggest that (1) executive processing tasks sample only few domain-general executive processes also sampled by fluid intelligence measures, as well as (2) that domain-general speed of processing contributes more strongly to individual differences in fluid intelligence than do domain-general executive processes

    Coupling of spin and vibrational degrees of freedom of adsorbates at metal surfaces probed by vibrational sum-frequency generation

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    Vibrational spectroscopy using sum-frequency generation has been used to investigate the coupling between a ferromagnetic thin film and adsorbed molecules, here CO on Ni/Cu(100). The CO stretching vibration exhibits a strong magnetic contrast with a pronounced temperature dependence, underlining the high sensitivity of this adsorbate-specific spectroscopy method. Our results indicate that the strong temperature dependence is caused by dynamical changes in the surface chemical bond when the CO stretch vibration is coupled to thermally excited external vibrational modes

    Temperature dependence of ultrafast phonon dynamics in graphite

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    Nonequilibrium optical phonons are generated in graphite following the excitation of electron-hole pairs with a femtosecond laser pulse. Their energy relaxation is probed by means of terahertz pulses. We find that the hot-phonon lifetime increases by a factor of 2 when the sample temperature decreases from 300 to 5 K. These results suggest that the energy relaxation in graphite at room temperature and above is dominated by the anharmonic decay of hot A′1phonons at the K point into acoustic phonons with energies of about 10 meV
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