Landau-Fermi liquid analysis of the 2D t-t' Hubbard model

We calculate the Landau interaction function f(k,k') for the two-dimensional t-t' Hubbard model on the square lattice using second and higher order perturbation theory. Within the Landau-Fermi liquid framework we discuss the behavior of spin and charge susceptibilities as function of the onsite interaction and band filling. In particular we analyze the role of elastic umklapp processes as driving force for the anisotropic reduction of the compressibility on parts of the Fermi surface.Comment: 10 pages, 16 figure

Temperature Dependence of the Superfluid Density in a Noncentrosymmetric Superconductor

For a noncentrosymmetric superconductor such as CePt3Si, we consider a Cooper pairing model with a two-component order parameter composed of spin-singlet and spin-triplet pairing components. We calculate the superfluid density tensor in the clean limit on the basis of the quasiclassical theory of superconductivity. We demonstrate that such a pairing model accounts for an experimentally observed feature of the temperature dependence of the London penetration depth in CePt3Si, i.e., line-node-gap behavior at low temperatures.Comment: 10 page

Using Josephson junctions to determine the pairing state of superconductors without crystal inversion symmetry

Theoretical studies of a planar tunnel junction between two superconductors with antisymmetric spin-orbit coupling are presented. The half-space Green's function for such a superconductor is determined. This is then used to derive expressions for the dissipative current and the Josephson current of the junction. Numerical results are presented in the case of the Rashba spin-orbit coupling, relevant to the much studied compound CePt$_3$Si. Current-voltage diagrams, differential conductance and the critical Josephson current are presented for different crystallographic orientations and different weights of singlet and triplet components of the pairing state. The main conclusion is that Josephson junctions with different crystallographic orientations may provide a direct connection between unconventional pairing in superconductors of this kind and the absence of inversion symmetry in the crystal.Comment: 16 pages, 10 figure

Surface and vortex structures in noncentrosymmetric superconductors under applied magnetic fields

We investigate how the macroscopic spatial structure of broken inversion symmetry manifests in noncentrosymmetric superconductors, by the microscopic broken inversion symmetry of the crystal structure. Based on the time-dependent Ginzburg-Landau theory including the Pauli paramagnetic effect and the Rashba interaction, we demonstrate that the centrosymmetric structures of the internal field and the screening current are broken macroscopically. The flow structure of paramagnetic supercurrent spontaneously induce the flux flow without applying external currents.Comment: 5 pages, 8 figures. accepted in Phys. Rev.

Phenomenological theory of the s-wave state in superconductors without an inversion center

Abstract.: In materials without an inversion center of symmetry the spin degeneracy of the conducting band is lifted by an antisymmetric spin orbit coupling (ASOC). Under such circumstances, spin and parity cannot be separately used to classify the Cooper pairing states. Consequently, the superconducting order parameter is generally a mixture of spin singlet and triplet pairing states. In this paper we investigate the structure of the order parameter and its response to disorder for the most symmetric pairing state (A1). Using the example of the heavy Fermion superconductor CePt3Si, we determine characteristic properties of the superconducting instability. Depending on the type of the pairing interaction, the gap function is characterized by the presence of line nodes. We show that this line nodes move in general upon temperature. Such nodes would be essential to explain recent low-temperature data of thermodynamic quantities such as the NMR-T1 -1, London penetration depth, and heat conductance. Moreover, we study the effect of (non-magnetic) impurity on the superconducting stat

Spin susceptibility in superconductors without inversion symmetry

In materials without spatial inversion symmetry the spin degeneracy of the conduction electrons can be lifted by an antisymmetric spin-orbit coupling. We discuss the influence of this spin-orbit coupling on the spin susceptibility of such superconductors, with a particular emphasis on the recently discovered heavy Fermion superconductor CePt3Si. We find that, for this compound (with tetragonal crystal symmetry,) irrespective of the pairing symmetry, the stable superconducting phases would give a very weak change of the spin susceptibility for fields along the c-axis and an intermediate reduction for fields in the basal plane. We also comment on the consequences for the paramagnetic limiting in this material.Comment: 10 pages, 3 figure

Modelling of broadband light sources based on InAs / INxGA1-xAS metamorphic quantum dots

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic 4-step-graded InxGa1- xAs buffer with x = 0.10, 0.20, 0.30, 0.40. We developed a model to calculate metamorphic QD energy levels based on realistic QD parameters and on strain-dependent material properties: results of simulations were validated against experimental values. By simulating the broadband metamorphic structure, we demonstrated that its light emission can cover the whole 1.0 - 1.7 μm range with a bandwidth of 550 nm at 10K. The emission spectrum was then assessed under realistic electrical injection conditions, at room temperature, through device-level simulations based on a coupled drift-diffusion and QD dynamics model. As metamorphic QD devices have been already fabricated with satisfying performances we believe that this proposal is a viable option to realize broader band light-emitting devices such as superluminescent diodes

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAsquantum dots(QDs) embedded into a metamorphic step-graded InxGa1−xAs buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in InxAlyGa1−x−yAs layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescenceemission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices