382 research outputs found

    40 Gbit/s silicon-organic hybrid (SOH) phase modulator

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    A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology

    Silicon Photonics for Coherent Terahertz Generation and Detection

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    Silicon-plasmonic internal photoemission devices can act as photomixers for generating terahertz frequency carriers (T-waves) for transmitters (Tx), or they function as receivers (Rx) for coherently downconverting Twave signals to the baseband. In a first demonstration, we monolithically integrate a Tx and a Rx on a silicon chip and operate them in a carrier frequency range up to 1THz . With a co-integrated transmission line both components can be connected

    Separable Subsurface Scattering

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    In this paper, we propose two real-time models for simulating subsurface scattering for a large variety of translucent materials, which need under 0.5 ms per frame to execute. This makes them a practical option for real-time production scenarios. Current state-of-the-art, real-time approaches simulate subsurface light transport by approximating the radially symmetric non-separable diffusion kernel with a sum of separable Gaussians, which requires multiple (up to 12) 1D convolutions. In this work we relax the requirement of radial symmetry to approximate a 2D diffuse reflectance profile by a single separable kernel. We first show that low-rank approximations based on matrix factorization outperform previous approaches, but they still need several passes to get good results. To solve this, we present two different separable models: the first one yields a high-quality diffusion simulation, while the second one offers an attractive trade-off between physical accuracy and artistic control. Both allow rendering of subsurface scattering using only two 1D convolutions, reducing both execution time and memory consumption, while delivering results comparable to techniques with higher cost. Using our importance-sampling and jittering strategies, only seven samples per pixel are required. Our methods can be implemented as simple post-processing steps without intrusive changes to existing rendering pipelines

    Silicon-organic hybrid electro-optical devices

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    Organic materials combined with strongly guiding silicon waveguides open the route to highly efficient electro-optical devices. Modulators based on the so-called silicon-organic hybrid (SOH) platform have only recently shown frequency responses up to 100 GHz, high-speed operation beyond 112 Gbit/s with fJ/bit power consumption. In this paper, we review the SOH platform and discuss important devices such as Mach-Zehnder and IQ-modulators based on the linear electro-optic effect. We further show liquid-crystal phase-shifters with a voltage-length product as low as V pi L = 0.06 V.mm and sub-mu W power consumption as required for slow optical switching or tuning optical filters and devices

    Field-effect silicon-plasmonic photodetector for coherent T-wave reception

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    Plasmonic internal photoemission detectors (PIPED) have recently been shown to combine compact footprint and high bandwidth with monolithic co-integration into silicon photonic circuits, thereby opening an attractive route towards optoelectronic generation and detection of waveforms in the sub-THz and THz frequency range, so-called T-waves. In this paper, we further expand the PIPED concept by introducing a metal-oxide-semiconductor (MOS) interface with an additional gate electrode that allows to control the carrier dynamics in the device and the degree of internal photoemission at the metal-semiconductor interfaces. We experimentally study the behavior of dedicated field-effect (FE-)PIPED test structures and develop a physical understanding of the underlying principles. We find that the THz down-conversion efficiency of FE-PIPED can be significantly increased when applying a gate potential. Building upon the improved understanding of the device physics, we further perform simulations and show that the gate field increases the carrier density in the conductive channel below the gate oxide to the extent that the device dynamics are determined by ultra-fast dielectric relaxation rather than by the carrier transit time. In this regime, the bandwidth can be increased to more than 1 THz. We believe that our experiments open a new path towards understanding the principles of internal photoemission in plasmonic structures, leading to PIPED-based optoelectronic signal processing systems with unprecedented bandwidth and efficiency

    Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration

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    Silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration combines organic clectro-optic materials with silicon photonic and plasmonic waveguides, The concept enables fast and power-efficient modulators that support advanced modulation formats such as QPSK and 16QAM

    Flexible terabit/s Nyquist-WDM super-channels using a gain-switched comb source

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    Terabit/s super-channels are likely to become the standard for next-generation optical networks and optical interconnects. A particularly promising approach exploits optical frequency combs for super-channel generation. We show that injection locking of a gain-switched laser diode can be used to generate frequency combs that are particularly well suited for terabit/s super-channel transmission. This approach stands out due to its extraordinary stability and flexibility in tuning both center wavelength and line spacing. We perform a series of transmission experiments using different comb line spacings and modulation formats. Using 9 comb lines and 16QAM signaling, an aggregate line rate (net data rate) of 1.296 Tbit/s (1.109 Tbit/s) is achieved for transmission over 150 km of standard single mode fiber (SSMF) using a spectral bandwidth of 166.5 GHz, which corresponds to a (net) spectral efficiency of 7.8 bit/s/Hz (6.7 bit/s/Hz). The line rate (net data rate) can be boosted to 2.112 Tbit/s (1.867 Tbit/s) for transmission over 300 km of SSMF by using a bandwidth of 300 GHz and QPSK modulation on the weaker carriers. For the reported net data rates and spectral efficiencies, we assume a variable overhead of either 7\% or 20\% for forward- error correction depending on the individual sub-channel quality after fiber transmission

    Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) integration

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    Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, nei-ther silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid integration, which combine SOI waveguides and plasmonic nanostructures with organic electro-optic cladding materials
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