Unipolar spin diodes and transistors

doi:10.1063/1.1348317 http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000009001273000001&idtype=cvips&prog=normal&doi=10.1063/1.1348317Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.G.V. acknowledges support from NSF Grant Nos. DMR-9706788 and DMR-0074959. M.E.F. acknowledges support from NSF Grant No. ECS-0000556

Resonant Impurity States in the D-Density-Wave Phase

We study the electronic structure near impurities in the d-density-wave (DDW) state, a possible candidate phase for the pseudo-gap region of the high-temperature superconductors. We show that the local DOS near a non-magnetic impurity in the DDW state is {\it qualitatively} different from that in a superconductor with $d_{x^2-y^2}$-symmetry. Since this result is a robust feature of the DDW phase, it can help to identify the nature of the two different phases recently observed by scanning tunneling microscopy experiments in the superconducting state of underdoped Bi-2212 compounds

Checkerboard local density of states in striped domains pinned by vortices

Within a Green's function formalism we calculate the electronic structure around static extended magnetic and non-magnetic perturbations in a d-wave superconductor. In partucular, we discuss recent elastic neutron scattering and scanning tunneling experiments on High-T_c cuprates exposed to an applied magnetic field. A physical picture consisting of antiferromagnetic vortex cores operating as pinning centers for surrounding stripes is qualitatively consistent with the neutron data provided the stripes have the usual antiphase modulation. The low energy electronic structure in such a region reveals a checkerboard interference pattern consistent with recent scanning tunneling experiments.Comment: 5 pages, 4 figure

Local density of states around a magnetic impurity in high-Tc superconductors based on the t-J model

The local density of states (LDOS) around a magnetic impurity in high-Tc superconductors is studied using the two-dimensional t-J model with a realistic band structure. The order parameters are determined in a self-consistent way within the Gutzwiller approximation and the Bogoliubov-de Gennes theory. In sharp contrast with the nonmagnetic impurity case, the LDOS near the magnetic impurity shows two resonance peaks reflecting the presence of spin-dependent resonance states. It is also shown that these resonance states are approximately localized around the impurity. The present results have an large implication on the scanning tunneling spectroscopy observation of Bi_{2}Sr_{2}Ca(Cu_{1-x}Ni[Zn]_{x})_{2}O_{8+delta}.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field

We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface.Comment: Non