729 research outputs found
Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom
The emission spectra of individual self-assembled quantum dots containing a
single magnetic Mn atom differ strongly from dot to dot. The differences are
explained by the influence of the system geometry, specifically the in-plane
asymmetry of the quantum dot and the position of the Mn atom. Depending on both
these parameters, one has different characteristic emission features which
either reveal or hide the spin state of the magnetic atom. The observed
behavior in both zero field and under magnetic field can be explained
quantitatively by the interplay between the exciton-manganese exchange
interaction (dependent on the Mn position) and the anisotropic part of the
electron-hole exchange interaction (related to the asymmetry of the quantum
dot).Comment: 5 pages, 5 figures, to be published in Phys. Rev. Let
Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
This work presents results of near-band gap magnetooptical studies on
(Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and
photoluminescence, that shift towards higher energies when the Mn concentration
increases and split nonlinearly under the magnetic field. Excitonic shifts are
determined by the s,p-d exchange coupling to magnetic ions, by the
electron-hole s-p exchange, and the spin-orbit interactions. A quantitative
description of the magnetoreflectivity findings indicates that the free
excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands,
respectively, the order reversed as compared to wurtzite GaN. Furthermore, our
results show that the magnitude of the giant exciton splittings, specific to
dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is
described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what
points to small and positive N_0 beta. It is shown that both the increase of
the gap with x and the small positive value of the exchange energy N_0 beta
corroborate recent theory describing the exchange splitting of the valence band
in a non-perturbative way, suitable for the case of a strong p-d hybridization.Comment: 8 pages, 8 figure
Development of an extrudable paste to build mycelium-bound composites
Mycelium-bound composites are promising materials for sustainable packaging, insulation, fashion, and architecture. However, moulding is the main fabrication process explored to date, strongly limiting the ability to design the complex shapes that could widen the range of applications. Extrusion is a facile and low energy-cost process that has not yet been explored for mycelium-bound composites with design freedom and structural properties. In this study, we combine cheap, easily and commonly available agricultural waste materials, bamboo microfibres, chitosan, and mycelium from Ganodermalucidum, to establish a composite mixture that is workable, extrudable and buildable. We study the impact of bamboo fibre size, chitosan concentration, pH and weight ratio of bamboo to chitosan to determine the optimum growth condition for the mycelium as well as high mechanical stiffness. The resulting materials have thus low energy costs, are sustainable and can be shaped easily. The developed composition is promising to further explore the use of mycelium-bound materials for structural applications using agricultural waste
Primeros auxilios á los envenenados, á los ahogados, á los asfixiados, á los heridos en caso de accidente y á los enfermos en caso de indisposición repentina
Antep.Port. a varias tintas.Contiene: Catálogo de las obras publicadas por la Revista de Medicina y Cirugía Prácticas con port. y pie de imprenta, 12 p
Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
We have calculated the spin-polarization effects of a current in a two
dimensional electron gas which is contacted by two ferromagnetic metals. In the
purely diffusive regime, the current may indeed be spin-polarized. However, for
a typical device geometry the degree of spin-polarization of the current is
limited to less than 0.1%, only. The change in device resistance for parallel
and antiparallel magnetization of the contacts is up to quadratically smaller,
and will thus be difficult to detect.Comment: Revtex, 4 pages, 3 figures (eps), Definition of spin pilarization
changed to standard definition in GMR, some straight forward algebra removed.
To appear as PRB Rap. Comm. August 15t
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce
Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and
n+GaAs:Si samples implanted under the same conditions, transport and magnetic
properties show marked differences. Transport measurements show anomalies,
consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as
well as the extraordinary Hall Effect up to the observed magnetic ordering
temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier
concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K
Rational Symplectic Field Theory for Legendrian knots
We construct a combinatorial invariant of Legendrian knots in standard
contact three-space. This invariant, which encodes rational relative Symplectic
Field Theory and extends contact homology, counts holomorphic disks with an
arbitrary number of positive punctures. The construction uses ideas from string
topology.Comment: 58 pages, many figures; v3: minor corrections; final version, to
appear in Inventiones Mathematica
Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties
We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices
with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML)
(23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA).
While previous reports state that GaMnAs layers thinner than 50 \AA are
paramagnetic in the whole Mn composition range achievable using MBE growth (up
to 8% Mn), we have found that short period superlattices exhibit a
paramagnetic-to-ferromagnetic phase transition with a transition temperature
which depends on both the thickness of the magnetic GaMnAs layer and the
nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the
magnetic layers in superlattices are ferromagnetically coupled for both thin
(below 50 \AA) and thick (above 50 \AA) GaMnAs layers.Comment: Proceedings of 4th International Workshop on Molecular Beam Epitaxy
and Vapour Phase Epitaxy Growth Physics and Technology, September 23 - 28
(2001), Warszawa, Poland, to appear in Thin Solid Films. 24 pages, 8 figure
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