Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy

Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i . e ., high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase Si x Ge 1- x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5-0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal-phase GaAs-Ge and GaAs-Si x Ge 1- x core-shell nanowires with x up to 0.59. By combining position-, polarization-, and excitation wavelength-dependent μ-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-Si x Ge 1- x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure

Unveiling Planar Defects in Hexagonal Group IV Materials

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I 3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I 3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present

Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1–x Alloys in Nanowires by Raman Spectroscopy

Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e., high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1–x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5–0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal-phase GaAs-Ge and GaAs-SixGe1–x core–shell nanowires with x up to 0.59. By combining position-, polarization-, and excitation wavelength-dependent μ-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency–composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1–x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure.This project has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economı́a, Industria y Competitividad (MINECO) under grant FEDER-MAT2017-90024-P and the Severo Ochoa Centres of Excellence Program under grant SEV-2015-0496 and by the Generalitat de Catalunya under grant no. 2017 SGR 1506. E.P.A.M.B. and E.M.T.F. acknowledge European Union’s Horizon 2020 research and innovation program under grant agreement no. 735008 (SiLAS). E.P.A.M.B. and M.A.V. acknowledge Solliance, a solar energy RD initiative of ECN, TNO, Holst, TU/e, IMEC, Forschungszentrum Jülich, and the Dutch province of Noord-Brabant for funding the TEM facility. R.R. thanks Silvana Botti for useful discussions.Peer reviewe

Observation of Conductance Quantization in InSb Nanowire Networks

International audienceMajorana zero modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offer a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in most of the contact pairs of the epitaxial InSb nanowire networks: the hallmark of ballistic transport behavior

Observation of Conductance Quantization in InSb Nanowire Networks

Majorana zero modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offer a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in most of the contact pairs of the epitaxial InSb nanowire networks: the hallmark of ballistic transport behavior

InSb Nanowires with Built-In Ga x In 1– x Sb Tunnel Barriers for Majorana Devices

International audienceMajorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and hightunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP.We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. Theheight and the width of the GaxIn1-xSbtunnel barrier areextracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimentalI-V trace

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. The goal of achieving efficient light emission from group-IV materials in silicon technology has been elusive for decades. Here we demonstrate efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys. We measure a sub-nanosecond, temperature-insensitive radiative recombination lifetime and observe an emission yield similar to that of direct-bandgap group-III–V semiconductors. Moreover, we demonstrate that, by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned over a broad range, while preserving the direct bandgap. Our experimental findings are in excellent quantitative agreement with ab initio theory. Hexagonal SiGe embodies an ideal material system in which to combine electronic and optoelectronic functionalities on a single chip, opening the way towards integrated device concepts and information-processing technologies

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. The goal 1 of achieving efficient light emission from group-IV materials in silicon technology has been elusive for decades 2–6. Here we demonstrate efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys. We measure a sub-nanosecond, temperature-insensitive radiative recombination lifetime and observe an emission yield similar to that of direct-bandgap group-III–V semiconductors. Moreover, we demonstrate that, by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned over a broad range, while preserving the direct bandgap. Our experimental findings are in excellent quantitative agreement with ab initio theory. Hexagonal SiGe embodies an ideal material system in which to combine electronic and optoelectronic functionalities on a single chip, opening the way towards integrated device concepts and information-processing technologies

InSb Nanowires with Built-In Ga_<i>x</i>In_1–<i>x</i>Sb Tunnel Barriers for Majorana Devices

Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of Ga_<i>x</i>In_1–<i>x</i>Sb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the Ga_<i>x</i>In_1–<i>x</i>Sb tunnel barrier are extracted from the Wentzel–Kramers-Brillouin (WKB) fits to the experimental <i>I</i>–<i>V</i> traces