Magnetism and its microscopic origin in iron-based high-temperature superconductors

High-temperature superconductivity in the iron-based materials emerges from, or sometimes coexists with, their metallic or insulating parent compound states. This is surprising since these undoped states display dramatically different antiferromagnetic (AF) spin arrangements and N$\rm \acute{e}$el temperatures. Although there is general consensus that magnetic interactions are important for superconductivity, much is still unknown concerning the microscopic origin of the magnetic states. In this review, progress in this area is summarized, focusing on recent experimental and theoretical results and discussing their microscopic implications. It is concluded that the parent compounds are in a state that is more complex than implied by a simple Fermi surface nesting scenario, and a dual description including both itinerant and localized degrees of freedom is needed to properly describe these fascinating materials.Comment: 14 pages, 4 figures, Review article, accepted for publication in Nature Physic

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour

Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of two-dimensional van der Waals (vdW) materials in order to introduce a highly tunable electron transfer pathway that directly competes with electron thermalization. We realize this scheme in a graphene-boron nitride-graphene (G-BN-G) vdW heterostructure, through which optically excited carriers are transported from one graphene layer to the other. By applying an interlayer bias voltage or varying the excitation photon energy, interlayer carrier transport can be controlled to occur faster or slower than the intralayer scattering events, thus effectively tuning the electron thermalization pathways in graphene. Our findings, which demonstrate a novel means to probe and directly modulate electron energy transport in nanoscale materials, represent an important step toward designing and implementing novel optoelectronic and energy-harvesting devices with tailored microscopic properties.Comment: Accepted to Nature Physic

CMOS pixel sensor development: a fast read-out architecture with integrated zero suppression

International audienceCMOS Monolithic Active Pixel Sensors (MAPS) have demonstrated their strong potential for tracking devices, particularly for flavour tagging. They are foreseen to equip several vertex detectors and beam telescopes. Most applications require high read-out speed, which imposes sensors to feature digital output with integrated zero suppression. The most recent development of MAPS at IPHC and IRFU addressing this issue will be reviewed. The design architecture, combining pixel array, column-level discriminators and zero suppression circuits, will be presented. Each pixel features a preamplifier and a correlated double sampling (CDS) micro-circuit reducing the temporal and fixed pattern noises. The sensor is fully programmable and can be monitored. It will equip experimental apparatus starting data taking in 2009/2010

The use of nanocrystal quantum dot as fluorophore reporters in molecular beacon-based assays

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Quantifying Quality of Life and Disability of Patients with Advanced Schistosomiasis Japonica

Advanced schistosomiasis japonica, an extreme form of chronic schistosomiasis that occurs in Asia, is more serious than the advanced hepatosplenic disease of schistosomiasis encountered in Africa and the Americas. The advanced schistosomiasis japonica is a chronic disabling condition associated with portal hypertension, splenomegaly, ascites, and gastro-oesophageal variceal bleeding, or with severe growth retardation or granulomatous disease of the large intestine. However, the actual disability caused by advanced schistosomiasis japonica is unknown. We carried out a patient-based quality-of-life evaluation employing a standardized and widely used questionnaire (known as “EQ-5D plus”), coupled with ultrasonography and laboratory tests on advanced schistosomiasis japonica cases in a hyperendemic area of China. Among 215 confirmed cases of advanced schistosomiasis japonica, we found an overall disability weight of 0.447 with age-specific weights ranging from 0.378 to 0.510. Importantly, advanced schistosomiasis japonica is not only associated with heavy disability weights, but also with high morbidity and poor self-reported quality of life. Our results provide valuable data for the current revision of the Global Burden of Disease (GBD) study, as well as for evidence-based decision-making in China's national schistosomiasis control program

Study of J/ψJ/\psi and ψ(3686)→Σ(1385)0Σˉ(1385)0\psi(3686)\rightarrow\Sigma(1385)^{0}\bar\Sigma(1385)^{0} and Ξ0Ξˉ0\Xi^0\bar\Xi^{0}

We study the decays of $J/\psi$ and $\psi(3686)$ to the final states $\Sigma(1385)^{0}\bar\Sigma(1385)^{0}$ and $\Xi^0\bar\Xi^{0}$ based on a single baryon tag method using data samples of $(1310.6 \pm 7.0) \times 10^{6}$ $J/\psi$ and $(447.9 \pm 2.9) \times 10^{6}$ $\psi(3686)$ events collected with the BESIII detector at the BEPCII collider. The decays to $\Sigma(1385)^{0}\bar\Sigma(1385)^{0}$ are observed for the first time. The measured branching fractions of $J/\psi$ and $\psi(3686)\rightarrow\Xi^0\bar\Xi^{0}$ are in good agreement with, and much more precise, than the previously published results. The angular parameters for these decays are also measured for the first time. The measured angular decay parameter for $J/\psi\rightarrow\Sigma(1385)^{0}\bar\Sigma(1385)^{0}$, $\alpha =-0.64 \pm 0.03 \pm 0.10$, is found to be negative, different to the other decay processes in this measurement. In addition, the "12\% rule" and isospin symmetry in the $J/\psi$ and $\psi(3686)\rightarrow\Xi\bar\Xi$ and $\Sigma(1385)\bar{\Sigma}(1385)$ systems are tested.Comment: 11 pages, 7 figures. This version is consistent with paper published in Phys.Lett. B770 (2017) 217-22

Observation of an anomalous line shape of the η′π+π−\eta^{\prime}\pi^{+}\pi^{-} mass spectrum near the ppˉp\bar{p} mass threshold in J/ψ→γη′π+π−J/\psi\rightarrow\gamma\eta^{\prime}\pi^{+}\pi^{-}

Using $1.09\times10^{9}$ $J/\psi$ events collected by the BESIII experiment in 2012, we study the $J/\psi\rightarrow\gamma\eta^{\prime}\pi^{+}\pi^{-}$ process and observe a significant abrupt change in the slope of the $\eta^{\prime}\pi^{+}\pi^{-}$ invariant mass distribution at the proton-antiproton ($p\bar{p}$) mass threshold. We use two models to characterize the $\eta^{\prime}\pi^{+}\pi^{-}$ line shape around $1.85~\text{GeV}/c^{2}$: one which explicitly incorporates the opening of a decay threshold in the mass spectrum (Flatt\'{e} formula), and another which is the coherent sum of two resonant amplitudes. Both fits show almost equally good agreement with data, and suggest the existence of either a broad state around $1.85~\text{GeV}/c^{2}$ with strong couplings to $p\bar{p}$ final states or a narrow state just below the $p\bar{p}$ mass threshold. Although we cannot distinguish between the fits, either one supports the existence of a $p\bar{p}$ molecule-like state or bound state with greater than $7\sigma$ significance

Measurement of azimuthal asymmetries in inclusive charged dipion production in e+e−e^+e^- annihilations at s\sqrt{s} = 3.65 GeV

We present a measurement of the azimuthal asymmetries of two charged pions in the inclusive process $e^+e^-\rightarrow \pi\pi X$ based on a data set of 62 $\rm{pb}^{-1}$ at the center-of-mass energy $\sqrt{s}=3.65$ GeV collected with the BESIII detector. These asymmetries can be attributed to the Collins fragmentation function. We observe a nonzero asymmetry, which increases with increasing pion momentum. As our energy scale is close to that of the existing semi-inclusive deep inelastic scattering experimental data, the measured asymmetries are important inputs for the global analysis of extracting the quark transversity distribution inside the nucleon and are valuable to explore the energy evolution of the spin-dependent fragmentation function.Comment: 7 pages, 5 figure