An educational tool for understanding MPEG‐2 video compression and coding techniques

The understanding of the video encoding/decoding processes is a key skill for students of computer science, engineering, or telecommunications, especially those specialized in multimedia. The special characteristics of the video signals, and how such features are leveraged to compress the video frames using coding theory, are hard to understand for engineering students. In this paper, we describe MPEG-2 analyzer, an educational tool designed to provide a comprehensive and interactive way to understand MPEG-2 video compression and encoding techniques. We have used our tool to evaluate its usefulness in reinforcing the knowledge about the MPEG-2 video (de)coding process to Telecommunication Engineering students. Results show that the evaluation of the tool is very positive, and it has helped them to understand many of the complex concepts covered in the course.Funding for open access charge: Universidad de Málaga / CBUA

A Tractable Line-of-Sight Product Channel Model: Application to Wireless Powered Communications

We here present a general and tractable fading model for line-of-sight (LOS) scenarios, which is based on the product of two independent and non-identically distributed κ- μ shadowed random variables. Simple closed-form expressions for the probability density function and cumulative distribution function are derived, which are as tractable as the corresponding expressions derived from a product of Nakagami-m random variables. This newly proposed model simplifies the challenging characterization of LOS product channels, as well as combinations of LOS channels with non-LOS ones. Results are used to analyze performance measures of interest in the context of wireless powered communications.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

Unravelling metabolic mechanisms behind chloroplast desiccation tolerance: chlorophyllous fern spore as a new promising unicellular model

Se sustituye el preprint por el postprint el 23-11-2020Fern spores are unicellular structures produced by the sporophyte generation that give rise to the haploid gametophyte. When released from the sporangium, spores are desiccation tolerant (DT) in the royal fern (Osmunda regalis) and contain fully developed chloroplasts. As a consequence this type of spores are called chlorophyllous spores (CS). Upon transfer to germination conditions, CS initiate a process of imbibition that suppress DT in 72h, before the germination starts. In parallel to such change in DT, thylakoids undergo a profound remodelling in composition and function. Firstly, sustained quenching of chlorophyll fluorescence is relaxed, giving rise to photochemically active CS, while lipid composition shifts from that of a resting structure to a metabolically active cell. Basically trigalactolipids decreased in favour of monogalactolipids, with a parallel desaturation of fatty acids. Storage lipids such as triacylglycerol were quickly depleted. These results highlight the importance of the structure of thylakoids lipid as a key to protect membrane integrity during desiccation, together with the saturation of fatty acids and the constitutive chlorophyll quenching to prevent oxidative damage. The CS used here, in which the same cell shifts from DT to sensitive strategy in 72h, reveal its their potential as unicellular models for future studies on DT.This work was funded by (i) the Basque Government (research project UPV/EHU IT-1018-16; and Predoctoral Fellowship to MLP); (ii) the Spanish Ministry of Economy and Competitiveness (MINECO) and the ERDF (FEDER) (research project CTM2014-53902-C2-2-P, and Juan de la Cierva-Incorporation fellowship IJCI-2014-22489 to BFM)

Recombination processes in unintentionally doped GaTe single crystals

Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and defects was analyzed. The results obtained show the existence of two acceptor levels with ionization energies of 110±5 and 150±5 meV, respectively, and one donor level with an ionization energy of 75±5 meV. The study of chemical composition by inductively coupled plasma-optical emission spectroscopy and x-ray energy dispersion spectroscopy shows the existence of Na, Li, and Si. Sodium and lithium impurities could be associated with acceptor levels at gallium substitutional sites, and silicon ones with a donor level at Ga sites, whose vacancies can also be involved in these electronic [email protected] ; [email protected]

Positron annihilation lifetime spectroscopy of ZnO bulk samples

In order to gain a further insight into the knowledge of point defects of ZnO, positron annihilation lifetime spectroscopy was performed on bulk samples annealed under different atmospheres. The samples were characterized at temperatures ranging from 10 to 500 K. Due to difficulties in the conventional fitting of the lifetime spectra caused by the low intensity of the defect signals, we have used an alternative method as a solution to overcome these difficulties and resolve all the lifetime components present in the spectra. Two different vacancy-type defects are identified in the samples: Zn vacancy complexes (VZn−X) and vacancy clusters consisting of up to five missing Zn-O pairs. In addition to the vacancies, we observe negative-ion-type defects, which are tentatively attributed to intrinsic defects in the Zn sublattice. The effect of the annealing on the observed defects is discussed. The concentrations of the VZn−X complexes and negative-ion-type defects are in the 0.2–2 ppm range, while the cluster concentrations are 1–2 orders of magnitude lower.Peer reviewe

Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W∕S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.Peer reviewe