5,361 research outputs found

    Exact solution of the Schr\"{o}dinger equation for an hydrogen atom at the interface between the vacuum and a topologically insulating surface

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    When an hydrogen atom is brought near to the interface between θ\theta-media, the quantum-mechanical motion of the electron will be affected by the electromagnetic interaction between the atomic charges and the θ\theta-interface, which is described by an axionic extension of Maxwell electrodynamics in the presence of a boundary. In this paper we investigate the atom-surface interaction effects upon the energy levels and wave functions of an hydrogen atom placed at the interface between a θ\theta-medium and the vacuum. In the approximation considered, the Schr\"{o}dinger equation can be exactly solved by separation of variables in terms of hypergeometic functions for the angular part and hydrogenic functions for the radial part. In order to make such effects apparent we deal with unrealistic high values of the θ\theta-parameter. We also compute the energy shifts using perturbation theory for a particular small value of θ\theta and we demonstrate that they are in a very good agreement with the ones obtained from the exact solution.Comment: 20 pages, 17 figures, 6 tables, Accepted for publication in the European Physics Journal

    Axisymmetric pulse recycling and motion in bulk semiconductors

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    The Kroemer model for the Gunn effect in a circular geometry (Corbino disks) has been numerically solved. The results have been interpreted by means of asymptotic calculations. Above a certain onset dc voltage bias, axisymmetric pulses of the electric field are periodically shed by an inner circular cathode. These pulses decay as they move towards the outer anode, which they may not reach. As a pulse advances, the external current increases continuously until a new pulse is generated. Then the current abruptly decreases, in agreement with existing experimental results. Depending on the bias, more complex patterns with multiple pulse shedding are possible.Comment: 8 pages, 15 figure

    On the Photorefractive Gunn Effect

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    We present and numerically solve a model of the photorefractive Gunn effect. We find that high field domains can be triggered by phase-locked interference fringes, as it has been recently predicted on the basis of linear stability considerations. Since the Gunn effect is intrinsically nonlinear, we find that such considerations give at best order-of-magnitude estimations of the parameters critical to the photorefractive Gunn effect. The response of the system is much more complex including multiple wave shedding from the injecting contact, wave suppression and chaos with spatial structure.Comment: Revtex, 8 pag., 4 fig. (jpg), submit to Physical Review

    Chaos in resonant-tunneling superlattices

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    Spatio-temporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.Comment: 3 pages, LaTex, RevTex, 3 uuencoded figures (1.2M) are available upon request from [email protected], to appear in Phys.Rev.

    Chaotic motion of space charge wavefronts in semiconductors under time-independent voltage bias

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    A standard drift-diffusion model of space charge wave propagation in semiconductors has been studied numerically and analytically under dc voltage bias. For sufficiently long samples, appropriate contact resistivity and applied voltage - such that the sample is biased in a regime of negative differential resistance - we find chaos in the propagation of nonlinear fronts (charge monopoles of alternating sign) of electric field. The chaos is always low-dimensional, but has a complex spatial structure; this behavior can be interpreted using a finite dimensional asymptotic model in which the front (charge monopole) positions and the electrical current are the only dynamical variables.Comment: 12 pages, 8 figure

    Dynamics of Electric Field Domains and Oscillations of the Photocurrent in a Simple Superlattice Model

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    A discrete model is introduced to account for the time-periodic oscillations of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40 period AlAs/GaAs superlattice. Basic ingredients are an effective negative differential resistance due to the sequential resonant tunneling of the photoexcited carriers through the potential barriers, and a rate equation for the holes that incorporates photogeneration and recombination. The photoexciting laser acts as a damping factor ending the oscillations when its power is large enough. The model explains: (i) the known oscillatory static I-V characteristic curve through the formation of a domain wall connecting high and low electric field domains, and (ii) the photocurrent and photoluminescence time-dependent oscillations after the domain wall is formed. In our model, they arise from the combined motion of the wall and the shift of the values of the electric field at the domains. Up to a certain value of the photoexcitation, the non-uniform field profile with two domains turns out to be metastable: after the photocurrent oscillations have ceased, the field profile slowly relaxes toward the uniform stationary solution (which is reached on a much longer time scale). Multiple stability of stationary states and hysteresis are also found. An interpretation of the oscillations in the photoluminescence spectrum is also given.Comment: 34 pages, REVTeX 3.0, 10 figures upon request, MA/UC3M/07/9

    Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

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    We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.Comment: Tex file and 3 postscript figure

    A moment based approach to the dynamical solution of the Kuramoto model

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    We examine the dynamics of the Kuramoto model with a new analytical approach. By defining an appropriate set of moments the dynamical equations can be exactly closed. We discuss some applications of the formalism like the existence of an effective Hamiltonian for the dynamics. We also show how this approach can be used to numerically investigate the dynamical behavior of the model without finite size effects.Comment: 6 pages, 5 figures, Revtex file, to appear in J. Phys.

    Opportunistic Infections in Patients with Temporal Arteritis Treated with Corticosteroids

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    Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/111238/1/j.1532-5415.1997.tb00949.x.pd

    Universality of the Gunn effect: self-sustained oscillations mediated by solitary waves

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    The Gunn effect consists of time-periodic oscillations of the current flowing through an external purely resistive circuit mediated by solitary wave dynamics of the electric field on an attached appropriate semiconductor. By means of a new asymptotic analysis, it is argued that Gunn-like behavior occurs in specific classes of model equations. As an illustration, an example related to the constrained Cahn-Allen equation is analyzed.Comment: 4 pages,3 Post-Script figure
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