115 research outputs found
Real-time observation of epitaxial graphene domain reorientation.
Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, 'ripening'; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV per C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene-substrate interaction reproduces the results. This work suggests new strategies for improving the van der Waals epitaxy of 2D materials
Labyrinthine Island Growth during Pd/Ru(0001) Heteroepitaxy
Using low energy electron microscopy we observe that Pd deposited on Ru only
attaches to small sections of the atomic step edges surrounding Pd islands.
This causes a novel epitaxial growth mode in which islands advance in a
snakelike motion, giving rise to labyrinthine patterns. Based on density
functional theory together with scanning tunneling microscopy and low energy
electron microscopy we propose that this growth mode is caused by a surface
alloy forming around growing islands. This alloy gradually reduces step
attachment rates, resulting in an instability that favors adatom attachment at
fast advancing step sections
Fast coarsening in unstable epitaxy with desorption
Homoepitaxial growth is unstable towards the formation of pyramidal mounds
when interlayer transport is reduced due to activation barriers to hopping at
step edges. Simulations of a lattice model and a continuum equation show that a
small amount of desorption dramatically speeds up the coarsening of the mound
array, leading to coarsening exponents between 1/3 and 1/2. The underlying
mechanism is the faster growth of larger mounds due to their lower evaporation
rate.Comment: 4 pages, 4 PostScript figure
Extraordinary epitaxial alignment of graphene islands on Au(111)
Pristine, single-crystalline graphene displays a unique collection of
remarkable electronic properties that arise from its two-dimensional, honeycomb
structure. Using in-situ low-energy electron microscopy, we show that when
deposited on the (111) surface of Au carbon forms such a structure. The
resulting monolayer, epitaxial film is formed by the coalescence of dendritic
graphene islands that nucleate at a high density. Over 95% of these islands can
be identically aligned with respect to each other and to the Au substrate.
Remarkably, the dominant island orientation is not the better lattice-matched
30^{\circ} rotated orientation but instead one in which the graphene [01] and
Au [011] in-plane directions are parallel. The epitaxial graphene film is only
weakly coupled to the Au surface, which maintains its reconstruction under the
slightly p-type doped graphene. The linear electronic dispersion characteristic
of free-standing graphene is retained regardless of orientation. That a weakly
interacting, non-lattice matched substrate is able to lock graphene into a
particular orientation is surprising. This ability, however, makes Au(111) a
promising substrate for the growth of single crystalline graphene films
Numerical test of the damping time of layer-by-layer growth on stochastic models
We perform Monte Carlo simulations on stochastic models such as the
Wolf-Villain (WV) model and the Family model in a modified version to measure
mean separation between islands in submonolayer regime and damping time
of layer-by-layer growth oscillations on one dimension. The
stochastic models are modified, allowing diffusion within interval upon
deposited. It is found numerically that the mean separation and the damping
time depend on the diffusion interval , leading to that the damping time is
related to the mean separation as for the WV model
and for the Family model. The numerical results are in
excellent agreement with recent theoretical predictions.Comment: 4 pages, source LaTeX file and 5 PS figure
How metal films de-wet substrates - identifying the kinetic pathways and energetic driving forces
We study how single-crystal chromium films of uniform thickness on W(110)
substrates are converted to arrays of three-dimensional (3D) Cr islands during
annealing. We use low-energy electron microscopy (LEEM) to directly observe a
kinetic pathway that produces trenches that expose the wetting layer. Adjacent
film steps move simultaneously uphill and downhill relative to the staircase of
atomic steps on the substrate. This step motion thickens the film regions where
steps advance. Where film steps retract, the film thins, eventually exposing
the stable wetting layer. Since our analysis shows that thick Cr films have a
lattice constant close to bulk Cr, we propose that surface and interface stress
provide a possible driving force for the observed morphological instability.
Atomistic simulations and analytic elastic models show that surface and
interface stress can cause a dependence of film energy on thickness that leads
to an instability to simultaneous thinning and thickening. We observe that
de-wetting is also initiated at bunches of substrate steps in two other
systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are
converted into patterns of unidirectional stripes as the trenches that expose
the wetting layer lengthen along the W[001] direction. Finally, we observe how
3D Cr islands form directly during film growth at elevated temperature. The Cr
mesas (wedges) form as Cr film steps advance down the staircase of substrate
steps, another example of the critical role that substrate steps play in 3D
island formation
Spectroscopic evidence for a gold-coloured metallic water solution
Insulating materials can in principle be made metallic by applying pressure. In the case of pure water, this is estimated1 to require a pressure of 48 megabar, which is beyond current experimental capabilities and may only exist in the interior of large planets or stars2–4. Indeed, recent estimates and experiments indicate that water at pressures accessible in the laboratory will at best be superionic with high protonic conductivity5, but not metallic with conductive electrons1. Here we show that a metallic water solution can be prepared by massive doping with electrons upon reacting water with alkali metals. Although analogous metallic solutions of liquid ammonia with high concentrations of solvated electrons have long been known and characterized6–9, the explosive interaction between alkali metals and water10,11 has so far only permitted the preparation of aqueous solutions with low, submetallic electron concentrations12–14. We found that the explosive behaviour of the water–alkali metal reaction can be suppressed by adsorbing water vapour at a low pressure of about 10−4 millibar onto liquid sodium–potassium alloy drops ejected into a vacuum chamber. This set-up leads to the formation of a transient gold-coloured layer of a metallic water solution covering the metal alloy drops. The metallic character of this layer, doped with around 5 × 1021 electrons per cubic centimetre, is confirmed using optical reflection and synchrotron X-ray photoelectron spectroscopies
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