61 research outputs found

    Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors

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    Validation of a technological process requires an intensive characterization of the performance of the resulting devices, circuits, or systems. The technology for the fabrication of micro and nanoelectromechanical systems (MEMS and NEMS) is evolving rapidly, with new kind of device concepts for applications like sensing or harvesting are being proposed and demonstrated. However, the characterization tools and methods for these new devices are still not fully developed. Here, we present an on-wafer, highly precise, and rapid characterization method to measure the mechanical, electrical, and electromechanical properties of piezoresistive cantilevers. The setup is based on a combination of probe-card and atomic force microscopy technology, it allows accessing many devices across a wafer and it can be applied to a broad range of MEMS and NEMS. Using this setup we have characterized the performance of multiple submicron thick piezoresistive cantilever force sensors. For the best design we have obtained a force sensitivity ℜ_F = 158μV/nN, a noise of 5.8 μV (1 Hz–1 kHz) and a minimum detectable force of 37 pN with a relative standard deviation of σ_r ≈ 8%. This small value of σr, together with a high fabrication yield >95%, validates our fabrication technology. These devices are intended to be used as bio-molecular detectors for the measurement of intermolecular forces between ligand and receptor molecule pairs

    Mechanical detection of carbon nanotube resonator vibrations

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    Bending-mode vibrations of carbon nanotube resonator devices were mechanically detected in air at atmospheric pressure by means of a novel scanning force microscopy method. The fundamental and higher order bending eigenmodes were imaged at up to 3.1GHz with sub-nanometer resolution in vibration amplitude. The resonance frequency and the eigenmode shape of multi-wall nanotubes are consistent with the elastic beam theory for a doubly clamped beam. For single-wall nanotubes, however, resonance frequencies are significantly shifted, which is attributed to fabrication generating, for example, slack. The effect of slack is studied by pulling down the tube with the tip, which drastically reduces the resonance frequency

    Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)

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    We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphene ribbons. These ribbons fully occupy unusually large terraces on the step bunched SiC surface, as shown by AFM, optical microscopy and SEM. Raman spectrometry indicates that the thermal stress has been partially relaxed by wrinkles formation, visible in AFM images. In addition, we show that despite the low optical absorption of graphene, optical differential transmission can be successfully used to prove the monolayer character of the ribbons

    Near infra-red light detection enhancement of plasmonic photodetectors

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    Nowadays numerous are the applications interested in exploiting near infrared light detection like LiDAR (at 850 - 950 nm wavelengths), NIR spectroscopy, quantum computation, and the detection of light from NIR emitting scintillators. Silicon based single photon avalanche diodes (SPAD) could be a valid device achieving high detection efficiency and high timing resolution. Moreover, they can provide single photon sensitivity in large areas if arranged in extended arrays named Silicon Photomultipliers (SiPM). Nevertheless, the Photon Detection Efficiency (PDE) of standard SiPMs in the NIR range is strongly limited by the relatively low Si absorption coefficient, leading to an absorption depth much larger than the typical active thickness of Si SPAD, i.e. 18 μm at 850 nm compared to some few μm’s. Hence, the performance of Si based detectors in NIR range is still inadequate for almost all the cited applications. A potential solution to overcome the limited Si absorption coefficient is to couple these photodetectors with a structure supporting highly confined light such as plasmonic oscillations, thus increasing the absorption. In recent years, the development in nanophotonic demonstrated that the interphase between metallic nanostructured and dielectric surface can support Surface Plasmon Polaritons (SPP) i.e. electrons collective oscillation highly confined along the thickness of the device. Some of these interesting nanostructured are: i) 1- and 2-dimensional gratings; ii) bullseye structures; iii) nano-pillars and nano-holes arrays. Among those, 1D and 2D metallic nanograting are the most promising structures considering their feasibility and possible integration with Si based photodetector and SiPM technologies. In this contribution, we investigated the integration of a bidimensional metallic plasmonic nanograting structure on state of art photodetectors (PDs). For ease of production and characterization, the test devices consisted of conventional Silicon photodiodes instead of a proper SPAD. The PDs have been produced at the facility of Fondazione Bruno Kessler (Trento, Italy) using a custom CMOS-like microfabrication process similar the one used for FBK-SiPM technology. The previous described metallic nanograting is directly fabricated on a PDs by i) Electron Beam Lithography (EBL), ii) silver deposition, and iii) lift-off. Afterwards, the quantum efficiency (QE) of the produced samples have been measured in (450-1100) nm range. The first results are promising with an enhancement of about 45% at 950 nm with respect to the reference PD without any plasmonic nanostructured on top

    STM induced hydrogen desorption via a hole resonance

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    We report STM-induced desorption of H from Si(100)-H(2×1\times1) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5σ\sigma hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.Comment: 4 pages, 4 figures. To appear in Phys. Rev. Let

    On the assessment by grazing-incidence small-angle X-ray scattering of replica quality in polymer gratings fabricated by nanoimprint lithography

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    Grazing-incidence small-angle X-ray scattering (GISAXS) can be used to characterize the replica quality of polymer gratings prepared by thermal nanoimprint lithography (NIL). Here it is shown using GISAXS experiments that a series of NIL polymer gratings with different line quality present characteristic features that can be associated with the level of defects per line. Both stamps and NIL polymer gratings exhibit characteristic semicircle-like GISAXS patterns. However NIL polymer gratings with defective lines exhibit GISAXS patterns with an excess of diffuse scattering as compared to those of the corresponding stamps. In a first approach, this effect is attributed to a reduction of the effective length of the lines diffracting coherently as the number of defects per line increases

    Nucleon-Nucleon Interaction: A Typical/Concise Review

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    Nearly a recent century of work is divided to Nucleon-Nucleon (NN) interaction issue. We review some overall perspectives of NN interaction with a brief discussion about deuteron, general structure and symmetries of NN Lagrangian as well as equations of motion and solutions. Meanwhile, the main NN interaction models, as frameworks to build NN potentials, are reviewed concisely. We try to include and study almost all well-known potentials in a similar way, discuss more on various commonly used plain forms for two-nucleon interaction with an emphasis on the phenomenological and meson-exchange potentials as well as the constituent-quark potentials and new ones based on chiral effective field theory and working in coordinate-space mostly. The potentials are constructed in a way that fit NN scattering data, phase shifts, and are also compared in this way usually. An extra goal of this study is to start comparing various potentials forms in a unified manner. So, we also comment on the advantages and disadvantages of the models and potentials partly with reference to some relevant works and probable future studies.Comment: 85 pages, 5 figures, than the previous v3 edition, minor changes, and typos fixe
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