Effective Governance of Global Financial Markets:An Evolutionary Plan for Reform

Runaway electrons, which are generated in a plasma where the induced electric field exceeds a certain critical value, can reach very high energies in the MeV range. For such energetic electrons, radiative losses will contribute significantly to the momentum space dynamics. Under certain conditions, due to radiative momentum losses, a non-monotonic feature - a ‘bump' - can form in the runaway electron tail, creating a potential for bump-on-tail-type instabilities to arise. Here, we study the conditions for the existence of the bump. We derive an analytical threshold condition for bump appearance and give an approximate expression for the minimum energy at which the bump can appear. Numerical calculations are performed to support the analytical derivation

Finite bias Cooper pair splitting

In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally investigate the effect of a finite potential difference across one quantum dot on the conductance through the other completely grounded QD in a Cooper pair splitter fabricated on an InAs nanowire. We demonstrate that the electrical transport through the device can be tuned by electrical means to be dominated either by Cooper pair splitting (CPS), or by elastic co-tunneling (EC). The basic experimental findings can be understood by considering the energy dependent density of states in a QD. The reported experiments add bias-dependent spectroscopy to the investigative tools necessary to develop CPS-based sources of entangled electrons in solid-state devices.Comment: 4 pages, 4 figure

Optical bandgap engineering in nonlinear silicon nitride waveguides

Silicon nitride is awell-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pressure chemical vapor deposition (LPCVD). Here we show that this parameter can be controlled in a highly reproducible manner, providing an approach to synthesize the nonlinear Kerr coefficient of the material. This holistic empirical study provides relevant guidelines to optimize the properties of LPCVD silicon nitride waveguides for nonlinear optics applications that rely on the Kerr effect

Absorption-reduced waveguide structure for efficient terahertz generation

An absorption-reduced planar waveguide structure is proposed for increasing the efficiency of terahertz (THz) pulse generation by optical rectification of femtosecond laser pulses with tiltedpulse- front in highly nonlinear materials with large absorption coefficient. The structure functions as waveguide both for the optical pump and the generated THz radiation. Most of the THz power propagates inside the cladding with low THz absorption, thereby reducing losses and leading to the enhancement of the THz generation efficiency by up to more than one order of magnitude, as compared with a bulk medium. Such a source can be suitable for highly efficient THz pulse generation pumped by low-energy (nJ-lJ) pulses at high (MHz) repetition rates delivered by compact fiber lasers

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only few techniques were developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.Comment: 9 pages, 5 figure

Deviation from the Fourier law in room-temperature heat pulse experiments

We report heat pulse experiments at room temperature that cannot be described by Fourier's law. The experimental data is modelled properly by the Guyer--Krumhansl equation, in its over-diffusion regime. The phenomenon is due to conduction channels with differing conductivities, and parallel to the direction of the heat flux.Comment: 9 pages, 4 figure