77,254 research outputs found

    High voltage planar multijunction solar cell

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    A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer

    Method of making a high voltage V-groove solar cell

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    A method is provided for making a high voltage multijunction solar cell. The cell comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells

    High voltage v-groove solar cell

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    A high voltage multijunction solar cell comprises a number of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells

    Adaptive high-order finite element solution of transient elastohydrodynamic lubrication problems

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    This article presents a new numerical method to solve transient line contact elastohydrodynamic lubrication (EHL) problems. A high-order discontinuous Galerkin (DG) finite element method is used for the spatial discretization, and the standard Crank-Nicolson method is employed to approximate the time derivative. An h-adaptivity method is used for grid adaptation with the time-stepping, and the penalty method is employed to handle the cavitation condition. The roughness model employed here is a simple indentation, which is located on the upper surface. Numerical results are presented comparing the DG method to standard finite difference (FD) techniques. It is shown that micro-EHL features are captured with far fewer degrees of freedom than when using low-order FD methods
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