14 research outputs found
Massive enhancement of electron-phonon coupling in doped graphene by an electronic singularity
The nature of the coupling leading to superconductivity in layered materials
such as high-Tc superconductors and graphite intercalation compounds (GICs) is
still unresolved. In both systems, interactions of electrons with either
phonons or other electrons or both have been proposed to explain
superconductivity. In the high-Tc cuprates, the presence of a Van Hove
singularity (VHS) in the density of states near the Fermi level was long ago
proposed to enhance the many-body couplings and therefore may play a role in
superconductivity. Such a singularity can cause an anisotropic variation in the
coupling strength, which may partially explain the so-called nodal-antinodal
dichotomy in the cuprates. Here we show that the topology of the graphene band
structure at dopings comparable to the GICs is quite similar to that of the
cuprates and that the quasiparticle dynamics in graphene have a similar
dichotomy. Namely, the electron-phonon coupling is highly anisotropic,
diverging near a saddle point in the graphene electronic band structure. These
results support the important role of the VHS in layered materials and the
possible optimization of Tc by tuning the VHS with respect to the Fermi level.Comment: 8 page
Morphology of graphene thin film growth on SiC(0001)
Epitaxial films of graphene on SiC(0001) are interesting from a basic physics
as well as applications-oriented point of view. Here we study the emerging
morphology of in-vacuo prepared graphene films using low energy electron
microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an
identification of single and bilayer of graphene film by comparing the
characteristic features in electron reflectivity spectra in LEEM to the PI-band
structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to
accurately determine the local extent of graphene layers as well as the layer
thickness
Large area quasi-free standing monolayer graphene on 3C-SiC(111)
Large scale, homogeneous quasi-free standing monolayer graphene is obtained
on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an
appealing and cost effective platform for graphene growth. The quasi-free
monolayer is produced by intercalation of hydrogen under the interfacial,
(6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle
resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The
decoupling of graphene from the substrate is identified by X-ray photoemission
spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force
microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that
homogeneous monolayer domains extend over areas of hundreds of
square-micrometers.Comment: 4 pages, 3 figures, Copyright (2011) American Institute of Physics.
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Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is
obtained by sublimation of Si from the substrate. The graphene film is
separated from the bulk by a carbon-rich interface layer (hereafter called the
buffer layer) which in part covalently binds to the substrate. Its structural
and electronic properties are currently under debate. In the present work we
report scanning tunneling microscopy (STM) studies of the buffer layer and of
quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling
the buffer layer from the SiC(0001) substrate by means of hydrogen
intercalation. Atomic resolution STM images of the buffer layer reveal that,
within the periodic structural corrugation of this interfacial layer, the
arrangement of atoms is topologically identical to that of graphene. After
hydrogen intercalation, we show that the resulting QFMLG is relieved from the
periodic corrugation and presents no detectable defect sites
Symmetry Breaking in Few Layer Graphene Films
Recently, it was demonstrated that the quasiparticle dynamics, the
layer-dependent charge and potential, and the c-axis screening coefficient
could be extracted from measurements of the spectral function of few layer
graphene films grown epitaxially on SiC using angle-resolved photoemission
spectroscopy (ARPES). In this article we review these findings, and present
detailed methodology for extracting such parameters from ARPES. We also present
detailed arguments against the possibility of an energy gap at the Dirac
crossing ED.Comment: 23 pages, 13 figures, Conference Proceedings of DPG Meeting Mar 2007
Regensburg Submitted to New Journal of Physic
Conversion of self-assembled monolayers into nanocrystalline graphene: Structure and electric transport
Graphene-based materials have been suggested for applications ranging from
nanoelectronics to nanobiotechnology. However, the realization of
graphene-based technologies will require large quantities of free-standing
two-dimensional (2D) carbon materials with tuneable physical and chemical
properties. Bottom-up approaches via molecular self-assembly have great
potential to fulfil this demand. Here, we report on the fabrication and
characterization of graphene made by electron-radiation induced cross-linking
of aromatic self-assembled monolayers (SAMs) and their subsequent annealing. In
this process, the SAM is converted into a nanocrystalline graphene sheet with
well defined thickness and arbitrary dimensions. Electric transport data
demonstrate that this transformation is accompanied by an insulator to metal
transition that can be utilized to control electrical properties such as
conductivity, electron mobility and ambipolar electric field effect of the
fabricated graphene sheets. The suggested route opens broad prospects towards
the engineering of free-standing 2D carbon materials with tuneable properties
on various solid substrates and on holey substrates as suspended membranes.Comment: 30 pages, 5 figure
Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation
The electronic structure of decoupled graphene on SiC(0001) can be tailored by introducing atomically thin layers of germanium at the interface. The electronically inactive (6 root 3 x 6 root 3)R30 degrees reconstructed buffer layer on SiC(0001) is converted into quasi-free-standing monolayer graphene after Ge intercalation and shows the characteristic graphene pi bands as displayed by angle-resolved photoelectron spectroscopy. Low-energy electron microscopy (LEEM) studies reveal an unusual mechanism of the intercalation in which the initial buffer layer is first ruptured into nanoscopic domains to allow the local in-diffusion of germanium to the interface. Upon further annealing, a continuous and homogeneous quasifree graphene film develops. Two symmetrically doped (n- and p-type) phases are obtained that are characterized by different Ge coverages. They can be prepared individually by annealing a Ge film at different temperatures. In an intermediate-temperature regime, a coexistence of the two phases can be achieved. In this transition regime, n-doped islands start to grow on a 100-nm scale within p-doped graphene terraces as revealed by LEEM. Subsequently, the n islands coalesce but still adjacent terraces may display different doping. Hence, lateral p-n junctions can be generated on epitaxial graphene with their size tailored on a mesoscopic scale