8,453 research outputs found

    Chemical abundances of damped Lyman alpha systems in the XQ-100 survey

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    The XQ-100 survey has provided high signal-noise spectra of 100 redshift 3-4.5 quasars with the X-Shooter spectrograph. The metal abundances for 13 elements in the 41 damped Lyman alpha systems (DLAs) identified in the XQ-100 sample are presented, and an investigation into abundances of a variety of DLA classes is conducted. The XQ-100 DLA sample contains five DLAs within 5000 km/s of their host quasar (proximate DLAs; PDLAs) as well as three sightlines which contain two DLAs within 10,000 km/s of each other along the same line-of-sight (multiple DLAs; MDLAs). Combined with previous observations in the literature, we demonstrate that PDLAs with logN(HI)<21.0 show lower [S/H] and [Fe/H] (relative to intervening systems with similar redshift and N(HI)), whilst higher [S/H] and [Si/H] are seen in PDLAs with logN(HI)>21.0. These abundance discrepancies are independent of their line-of-sight velocity separation from the host quasar, and the velocity width of the metal lines (v90). Contrary to previous studies, MDLAs show no difference in [alpha/Fe] relative to single DLAs matched in metallicity and redshift. In addition, we present follow-up UVES data of J0034+1639, a sightline containing three DLAs, including a metal-poor DLA with [Fe/H]=-2.82 (the third lowest [Fe/H] in DLAs identified to date) at z=4.25. Lastly we study the dust-corrected [Zn/Fe], emphasizing that near-IR coverage of X-Shooter provides unprecedented access to MgII, CaII and TiII lines (at redshifts 3-4) to provide additional evidence for subsolar [Zn/Fe] ratio in DLAs.Comment: Accepted to MNRAS. 19 pages plus Appendix material (102 pages total

    The Investigation of Space Charge Dominated Beams in a Synchrotron

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    This research was sponsored by the National Science Foundation Grant NSF PHY-931478

    Clues to the nature of high-redshift OVI absorption systems from their (lack of) small-scale structure

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    We present results of the first survey of high-redshift ( ~ 2.3) OVI absorption systems along parallel lines of sight toward two lensed QSOs. After a careful and well-defined search, we find ten intervening OVI systems. Within the errors, all OVI systems appear at the same redshift and have similar line strengths in front of both QSO images, whereas in most cases CIV or SiIV show more differences across the lines of sight, either in radial velocity or line strength. We conclude that (1) the coherence length of OVI must be much larger than ~ 1 kpc, and (2) an important fraction of the CIV absorbers may not reside in the same volume as OVI. Since Doppler parameters are consistent with photoionization, we propose a model in which CIV occurs in two different photoionized phases, one large, with characteristic sizes of a few hundred kpc and bearing OVI, and another one a factor of ten smaller and containing CIII. This model is able to explain the various transverse differences observed in column density and kinematics. We apply the model successfully to 2 kinds of absorbers, with low and high metallicity. In the low-metallicity regime, [C/H] \~ -2, we find that [C/O] ~ -0.7 is required to explain the observations, which hints at late (z < 6) rather than early metal enrichment. In the high-metallicity regime, the observed dissociation between OVI and CIV gas might be produced by galactic outflows. Altogether, the relative abundances, inhomogeneous CIV and featureless OVI are consistent with gas that has been processed recently before the absorption occurred (thus close to star-forming regions). Finally, we discuss briefly three associated systems (z_abs ~ z_em) that also show OVI. (abridged)Comment: Accepted by A&A, 22 page

    Clustering of vacancy defects in high-purity semi-insulating SiC

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    Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Comment: 8 pages, 5 figure
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