Indication of Non-equilibrium Transport in SiGe p-MOSFETs

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Enhanced velocity overshoot and transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - predictions for deep submicron devices

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Improved effective mobility extraction in MOSFETs

The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K

SiGe field effect transistors - performance and applications

Recent and encouraging developments in Schotky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications

Phonon-drag thermopower in Si:B and Si:Sb ?-doped samples

The thermal conductivity and the thermoelectric power of two dimensional hole and electron gases in B and Sb delta-doped Si structures have been measured for the first time. The temperature range was 1.4 K to 30 K, and carrier sheet densities were in the range 0.3 to 1.0 × 1014 cm-2. Kohn anomalies have been observed in all samples. The thermopower is dominated by the phonon drag contribution in each case. Calculations of the temperature dependence of the thermopower agree with experimental data when unscreened phonon scattering potentials are used for Si:B and Si:Sb

Thick selective epitaxial growth of silicon at 960ºC using silane only

Selective epitaxial layers of silicon have been successfully grown in a chlorine-free system. An optimum set of growth conditions has been found under which selective layers of up to 1 μm can be achieved. Excellent thickness uniformity (less than 5% standard deviation) across the wafer and from run to run has been achieved in windows as small as 1 μm, without any loading effect. In features with sidewalls aligned along the 〈100〉 direction, faceting is less pronounced as compared to features aligned along the 〈110〉 direction. The technology is promising for the fabrication of future ULSI devices, utilizing selective epitaxial growth of silicon

Photoluminescence from Si/Si0.87Ge0.13 multiple quantum well wires

This paper reports a low temperature photoluminescence study of the optical properties of a series of dry etched free standing strained layer Si/Si0.87Ge0.13 multiple quantum well wires with lateral dimensions between 40nm and 500nm. The results show that dry etching induces partial strain relaxation. An enhanced electron-hole droplets emission from the Si layers with reducing wire width was observed due to both the extra surface roughness introduced during the etching process, which accelerates the nucleation of the droplets formation, and the effect of lateral confinement. A new feature at 1.131eV at 4K related to unknown impurity states located at the heterointerfaces was also detected

Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature

We present a comprehensive study of hole transport in germanium layers on “virtual” substrates using a full band Monte Carlo simulation approach, considering alternate “virtual” substrate and channel orientations and including the impact of the corresponding biaxial strain, doping, and lattice temperature. The superior mobility in strained germanium channels with orientation on a (110) “virtual” substrate is confirmed, and the factors leading to this enhancement are evaluated. The significant decrease in strain-and-orientation-induced mobility enhancement due to impurity scattering in doped material and at increasing lattice temperature is also demonstrated. Both factors determine how efficiently the mobility enhancement translates into transistor performance enhancement. Additionally, we shine light on the question of which factor has stronger impact in mediating the increase in mobility due to strain-the breaking of degeneracy for the heavy- and light-hole bands at the point or the reduction in the density of states