Oxide charge evolution under crystallization of amorphous Li–Nb–O films

Li–Nb–O amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering method in an Ar environment and an Ar(60%)+O2(40%) gas mixture. A positive effective fixed oxide charge Qeff having negative, -Qeff, and positive, +Qeff, components, exists in the as-grown heterostructures. -Qeff is located near the substrate/film interface, whereas + Qeff is determined by a deficit of Li and O (vacancies) in the bulk of Li–Nb–O films. As-grown films crystallized under thermal annealing (TA) at temperatures up to 600 °C and revealed the formation of polycrystalline LiNbO3. TA at about 520 °C resulted in the formation of the second phase LiNb3O8, increasing + Qeff, and compensating -Qeff entirely. The dielectric constants of the as-grown films exhibit two peaks at the annealing temperatures of 450 °C and 550 °C, which are attributed to the total crystallization and recrystallization of the LN films under TA, respectively. © 2020 The AuthorsRussian Foundation for Basic Research, RFBR: 18-29-11062, 18-32-00959This research was supported by the Russian Foundation for Basic Research (Grant № 18-29-11062 and Grant № 18-32-00959 ). The equipment of the Ural Center for Shared Use “Modern Nanotechnology” of the Ural Federal University was used

Effect of reactive gas environment on domain structure and local switching of LiNbO3 thin films deposited on Si(001) by radio-frequency magnetron sputtering

The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used. The work was supported by Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006) and by Russian Foundation for Basic Research (Grant 18-32-00959)

EFFECT OF PHOTON TREATMENT ON STRUCTURE OF NIOBIUM OXIDE FILMS

In this work, we investigate changes in the phase composition, morphology, and structural changes during the photonic treatment of films obtained in the process of ion-beam sputtering of an Nb2O5 target. It was found that the initial films have an amorphous structure; at an irradiation energy of ~ 1.Работа была выполнена при поддержке государственного задания (N FZGM-2020-0007)