Effect of reactive gas environment on domain structure and local switching of LiNbO3 thin films deposited on Si(001) by radio-frequency magnetron sputtering

Abstract

The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used. The work was supported by Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006) and by Russian Foundation for Basic Research (Grant 18-32-00959)

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