DETEKTOR IGŁOWY PROMIENIOWANIA X I GAMMA

The article presents the developed structure of the novel needle proportional gas detector (NPC – Needle Proportional Counter) used for the detection of X-rays and gamma rays. The advantage of the detector is its simple mechanical construction and the possibility of detection of incident radiation in a direction parallel to the needle. The measured energy spectrum of the isotope Fe-55 by means of the developed detector is presented. Artykuł przedstawia opracowaną konstrukcję nowego typu gazowego detektora igłowego, służącego do detekcji promieniowania X i gamma. Zaletą detektora jest jego prosta konstrukcja mechaniczna i możliwość detekcji promieniowania w kierunku równoległym do igły. Zmierzono widmo energetyczne izotopu Fe-55 opracowanym detektorem

Efekt Mozarta czy interferencja retroaktywna? : wpływ poprzedzającej muzyki instrumentalnej i wokalnej na efekty odtwarzania

The aim of the research was to examine how different versions of the same musical composition affect the recall of earlier memorised verbal material. One hundred sixty one high school students were divided into four groups. In three of the groups the recall phase was preceded by an instrumental, Polish and English version of the same musical composition respectively. The fourth group was the control group, where recall was preceded by silence. In the first phase of the experiment the subjects memorized a list of words in English. In the second phase they either listened to music or remained in silence. In the third phase the subjects were recalling remembered words. At the end all the subjects filled in a questionnaire, concerning among other the evaluation of the experimental procedure and their learning style preferences (with or without music). The obtained results showed significant differences in recall between the instrumental and English, English and Polish and also instrumental and control groups respectively. It has been found that vocal music in English version decreased the amount of the recalled material while the instrumental music increased it. The interpretation of the results was based on the Mozart Effect (improvements of cognitive task results due to the effect of music) and retroactive inhibition (the worsening of the results due to the interpolated variable)

POMIAR CZASU MARTWEGO METODĄ DWÓCH ŹRÓDEŁ – OPTYMIZACJA PODZIAŁU CZASU POMIARU

The article presents the analysis of the dead time measurement using two sources for a non-paralyzable detector. It determined the optimum division of count rate measurement time between both source measurement and a single source one. Results of the work can be used to optimize dead time measurement for systems which count photons or particles.W artykule zaprezentowano analizę pomiaru czasu martwego detektora nieparaliżowalnego metodą dwóch źródeł. Wyznaczono optymalny podział czasu pomiaru częstości zliczeń dla pomiaru jednym i dwoma źródłami. Wyniki pracy mogą być wykorzystane do optymalizacji systemów zliczających fotony lub cząstki

A versatile tool for extraction of MOSFETs parameters, Journal of Telecommunications and Information Technology, 2005, nr 1

Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data

Adsorption properties of porous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1

Porous silicon shows some interesting features for micromechanical applications. Some applications make use of its high surface-to-volume ratio. A capacitive gas or humidity sensor using the adsorption of gases on the porous surface can be easily fabricated. However an opportunity for more sensitive device is given by micromechanical structure. In this paper we report on the piezoresistive cantilever beam structure with porous silicon adsorbing spot as a gas sensor

Piezoresistive sensors for atomic force microscopy – numerical simulations by means of virtual wafer fab, Journal of Telecommunications and Information Technology, 2001, nr 1

An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic force microscopy (AFM) sensors. They were obtained using the virtual wafer fab (VWF) software, which is used in the Institute of Electron Technology (IET). The technology mentioned above is used for fabrication of the AFM cantilevers, which has been designed for measurement and characterization of the surface roughness, the texturing, the grain size and the hardness. The simulation are very useful in manufacturing other microcantilever sensors

TEORIA WZMOCNIENIA JEDNOFOLIOWEGO DETEKTORA Z GAZOWYM POWIELANIEM ELEKTRONÓW

Gain prediction theory of single foil Gas Electron Multiplier detector was developed. Gas electron multiplier (GEM) detector with single foil was developed. Soft X-ray spectra with an energy of 5.9 keV emitted by the isotope Fe-55 were measured. On this basis, the dependence of gain and energy resolution from the detector voltage was determined. The simple theory of gain dependence on various detector parameters was developed. Preliminary results of the study confirmed the potential usefulness of the GEM detector as a substitute for the multiwire proportional chamber.Opracowano teorię wzmocnienia jednofoliowego detektora z gazowym powielaniem elektronów. Opracowano detektor z gazowym powielaniem elektronów z pojedynczą folią. Zmierzono widmo miękkiego promieniowania X, o energii 5,9 keV, emitowanego przez izotop Fe-55. Na tej podstawie wyznaczono zależność wzmocnienia i energetycznej zdolności rozdzielczej od napięcia zasilającego detektor. Opracowano prosta teorią zależności wzmocnienia od różnych parametrów detektora. Wstępne rezultaty badań potwierdzają potencjalną przydatność detektora GEM jako substytutu wielodrutowej komory proporcjonalnej

The analysis of hornbeam (Carpinus) pollen count in selected Polish cities in 2007

Praca przedstawia przebieg sezonu pylenia grabu w 2007 r. w Sosnowcu, Białymstoku, Krakowie, Lublinie, Łodzi, Olsztynie, Warszawie, we Wrocławiu i w Szczecinie. Badania prowadzono metodą objętościową przy zastosowaniu aparatów typu Burkard i Lanzoni. Sezon pyłkowy wyznaczono metodą 98%. Najwcześniej pyłek grabu zarejestrowano w Lublinie (24 marca), a we Wrocławiu, w Warszawie, Krakowie i Szczecinie w ciągu kolejnych trzech dni. Najwyższe wartości stężeń średniodobowych zanotowano w Lublinie 19 kwietnia (133 z/m3), najniższe w Łodzi (29 z/m3).The article presents a record of the 2007 hornbeam pollination season in Sosnowiec, Białystok, Kraków, Łódź, Olsztyn, Warszawa, Wrocław and Szczecin. The research was carried out by means of the volumetric method with the use of Burkard and Lanzoni devices. The pollen season was determined by means of the 98 % method. Hornbeam pollen was earliest recorded in Lublin (24 March), it was recorded in Wrocław, Warszawa, Kraków and Szczecin during the next three days and latest in Łódź – on 4 April. The highest concentration values were recorded in Lublin on 19 April (133 grains/m3) and the lowest in Łódź (29 grains/m3)

TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology, Journal of Telecommunications and Information Technology, 2005, nr 1

This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail