Fabrication of low optical losses Al2O3 layer used for Er3+-doped integrated optical amplifiers

Al2O3 is commonly used as host material for Er3+-doped integrated optical amplifiers. In this paper, a Graeco-Latin square is used in DC reactive magnetron sputtering deposition experiment in order to get low optical losses Al2O3 layer. By reasonable selection and careful arrangement of experimental parameters, an optimal combination of deposition parameters is obtained via statistic analysis with the fewest experimental runs. The result forms the base for the further fabrication of Er3+-doped Al2O3 layer. The Graeco-Latin square experiment can also be used to investigate the influence of each parameter on the deposition rate of Al2O3 layer

Transmission of pillar-based photonic crystal waveguides in InP technology

Waveguides based on line defects in pillar photonic crystals have been fabricated in InP/InGaAsP/InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuit

Novel Integrated Tunable Laser using Filtered Feedback for simple and very fast tuning

Boudewijn Docter et al. ECOC 2009, 20-24 September, 2009, Vienna, Austria.- Paper 8.1.6We present a novel integrated tunable laser based on filtered feedback, which combines a simple tuning method with ns switching speed.Peer reviewe

Trends in high speed interconnects:InP monolithic integration

InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial

Simulations of fast switching between longitudinal modes of semiconductor laser cavity induced by on-chip filtered optical feedback

3 pages, 7 figures.-- PDF pre-print.A set of delay differential equations is introduced to describe the multimode dynamics of a DBR laser cavity integrated with a passive filtered-feedback cavity. We demonstrate that a modulation of the central frequency of the feedback filter can be used to induce switches between different lasing modes of the DBR laser. The dependence on different model parameters such as feedback strength, feedback phase or cavity losses is quantitatively investigated.Peer reviewe

Deeply-etched DBR gratings for Photonic Integrated Circuits and Tunable Lasers

4 pages, 8 figures.-- PDF pre-print.Deeply-etched DBR gratings are versatile components for application in Photonic Integrated Circuits. A fabrication technology was developed that allows integration of deeply-etched DBR mirrors with other active and passive components on an InP chip. As a demonstration of the many applications of the DBR mirrors a novel discretely tunable laser based on filtered feedback is presented. The laser has a simple tuning method and the potentially sub-ns switching speed makes the device promising for packet-switching applications. Because of the simple control scheme, the device also has potential for low-cost applications like metro- and access networks.Peer reviewe

112-Gbit/s single side-band PAM-4 transmission over inter-DCI distances without DCF enabled by low-complexity DSP

We present a chromatic dispersion and bandwidth pre-compensated 112-Gbit/s single side band signal transmitter over 93 km SSMF at 1550 nm using a dual-drive MZM. The proposed scheme is computationally efficient utilising only 21 linear and 11 quadratic taps

Deep etched DBR gratings in InP for photonic integrated circuits

A novel fabrication process was developed to realize high quality SiOx masks for Cl2 based ICP etching of InP. First order DBR mirrors, 3 µm deep, were realized that can be used in photonic integrated circuits. The process can be used in combination with conventional optical lithography, reducing production cost

112-Gbit/sλ PAM4 transmission enabled by a negatively-chirped InP-MZ modulator

A negatively-chirped InP-MZM modulated by a 1-Vpp PAM4 signal enables 112Gbit/s/λ data transmission with reduced digital processing complexity. SSMF-links longer than 3-km (KP4-preFEC) or 4-km (HD-preFEC) without digital dispersion pre/post compensation are successfully demonstrated.</p