Penerapan Logika Fuzzy Menggunakan Metode Mamdani dalam Optimasi Permintaan Obat

Planning a good drug supply at the puskesmas is needed to support health services provided by the puskesmas, in addressing the problem of planning drug requests to suit the needs that exist, the researcher uses Mamdani method in fuzzy form that are making fuzzy set, application of rule function, composition rule, affirmation (defuzzy) using method of MOM (Mean of Maximum). Parameters used are initial stock, receipt, preparation, use, ending and demand stock. The calculation was performed using data for 2 years, and it was done 1 year to compare the results of the Health Centre request and the system request. From the test results, the total system demand is smaller than the total demand for Puskesmas, so the system optimization is obtained at 7.623% for 3 drug data so that it can increase the efficiency of the budget funds of Rp. 3,168,223, so it can be concluded that the Fuzzy Mamdani method is a method that provides optimal solution

Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.                        

Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs

In this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. The impact of plasma power density on the device parameters is investigated. It is found that RF plasma annealing with a low power density (0.5 W/cm2) at 150°C for 10 min provides substantial improvement of source/drain contacts resistance and the carrier mobility resulting in a considerable increase of the on-state current and transconductance. It also improves the subthreshold slope and reduces the fixed positive charge in Al2O3 under the gate, shifting the threshold voltage toward positive values. It is demonstrated that non-thermal factors play a principle role in modification of electrical properties of the JL MOSFETs under RF plasma treatment. Such treatment may be an efficient tool for the improvement of the performance of the advanced MOSFETs with III-V channel materials

Un solveur HLLTpour les equations de Saint-vVenant et traitement des confluences et des inondations

Nous présentons dans ce rapport la résolution, par une méthode volumes finis, du système des équations de Saint-Venant avec termes sources topographiques sur des domaines 1D. Avec une idée originale de Leroux (CHINNAYYA A. et al, 2004), le système des équations est complété par une équation triviale sur la bathymétrie. Par un changement de variable, on élabore une formulation célérité-vitesse des équations que l’on linéarise. Nous construisons ensuite un solveur de Riemann approché qui préserve la positivité de la célérité et qui assure la prise en compte des bancs-couvrantsdécouvrants (LEBUNETE J. et al, 2011). Enfin, des applications numériques sur des cas tests sont présentées.Mots-clés: Shallow water equations, finite volumes, Riemann solver, positivity preserving scheme, wetting and drying flowsEnglish AbstractA finite-volume method for the one-dimensional shallow-water equations including topographic source terms is presented. Exploiting an original idea by Leroux (CHINNAYYA A. et al, 2004), the system of partial-differential equations is completed by a trivial equation for the bathymetry. By applying a change of variable, the system is given a celerity-speed formulation, and linearized. As a result, an approximate Riemann solver preserving the positivity of the celerity can be constructed, permitting wetting and drying flow simulations to be performed (LEBUNETE J. et al, 2011). Finally, the simulation of numerical test cases is presented.Keywords: Equations de Saint-Venant, volumes finis, solveur de Riemann, schéma positif, bancs couvrants-découvrant

Recalage d’images d’empreintes digitales en biométrie sans contact

Parmi toutes les données biométriques, les empreintes digitales sont les caractéristiques humaines les plus commodes, largement utilisées pour identifier les individus. Cependant, les systèmes d’acquisition des empreintes digitales basés sur le contact présentent des inconvénients liés à l’élasticité de la peau, l’inconsistance des placements, les conditions de l’environnement, etc. Dans cet article, nous présentons une approche de recalage d’images d’empreintes digitales acquises sans contact. Pour estimer la transformation géométrique, on recherche un ensemble de paires de points dans les images à apparier. Ces paires sont construites à partir de points d’intérêt extraits des images à l’aide du détecteur de Harris. La correspondance entre les ensembles de points de contrôle, est obtenue en calculant le vecteur descripteur des moments de Zernike sur une fenêtre circulaire centrée en chaque point. Les moments de Zernike sont calculés sur la représentation en niveau de gris de ces images. La comparaison des coefficients de corrélation entre les vecteurs descripteurs des moments de Zernike, permet de définir les points homologues. L’estimation des paramètres de la déformation existante entre les images est effectuée en utilisant l’algorithme RANSAC (RANdomSAmple Consensus) qui supprime les fausses correspondances. Nous illustrons la méthode proposée sur une base de 100 images que nous avons constituées.Mots clés : Biométrie sans contact, Empreinte digitale, Moments de Zernike, Détecteur de Harris, Recalage.English AbstractFor all data biometry, the fingerprints are the most convenient human features, extensively used in the goal to identify the individuals by contact. This counterpart the fingerprint systems based on contact have major inconveniences bound to the investment of the finger, to the pressure exercised on the sensor. In this paper, we present an approach for the registration of fingerprint images acquired without contact. We using a set of interest points extracted from the images with the Harris detector to estimate the geometric transformation. The correspondence between the sets control points, is obtained by calculating the descriptor vector of Zernike moments on a circular window centered at each point. Zernike moments are calculated on the grayscale representation of these images. Comparison of correlation coefficients between the vectors of Zernike moments descriptors, used to define the corresponding points. The estimation of parameters of the existing deformation between the images is performed using the RANSAC algorithm (Random SAmple Consensus) that suppresses false matches. The proposed algorithm has been tested on a set of 100 fingerprint images.Keywords: Contactless Biometry, Fingerprint, Zernike moments, Harris detector, Image registration

The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications

Hafnium erbium oxide (HfErOx) thin films were formed using atomic layer deposition. The effect of using different Hf:Er pulse ratios on the electrical and structural properties of the HfErOx thin films (∼9 nm) in metal–insulator–metal (MIM) capacitor structures have been investigated and comparisons made between as-deposited and annealed samples. We report the stabilisation of the higher dielectric constant (k) tetragonal/cubic phase by optimising the Hf:Er pulse ratio. The dielectric properties post thermal anneal at 500 °C were studied. A leakage current in the order of ∼1 × 10−8 (A/cm2) at a voltage of 1 V and a capacitance equivalent thickness of ∼1.4 nm have been achieved post thermal annealing at 500 °C

Electrically active interface defects in the In0.53Ga0.47As MOS system

In this work we present experimental results examining the energy distribution of the relatively high (>1 × 1012 cm−2 eV−1) density of electrically active defects which are commonly reported at the interface between high dielectric constant (high-k) thin films and In0.53Ga0.47As. The interface state distribution is examined for the Al2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) system based on analysis of the full gate capacitance (Cg–Vg) of the surface n-channel In0.53Ga0.47As MOS transistors. The experimental capacitance, recorded at −50 °C and 1 MHz to approximate a high frequency response, is compared to the theoretical Cg–Vg response to evaluate the interface state distribution across the In0.53Ga0.47As energy gap and extending into the In0.53Ga0.47As conduction band. To improve the accuracy of the fitting process, the Maserjian Y-function was used in the modeling of the interface defects and fixed oxide charge densities. The analysis reveals a peak of donor-like interface traps with a density of 1.5 × 1013 cm−2 eV−1 located at ∼0.36 eV above the In0.53Ga0.47As valence band edge, a high density of donor-like states increasing towards the In0.53Ga0.47As valence band. The analysis also indicates acceptor-like interface traps located in the In0.53Ga0.47As conduction band, with a density of ∼2.5 × 1013 cm−2 eV−1 at 0.3 eV above the In0.53Ga0.47As conduction band minima. The reported interface state density is similar to reports for others oxides, suggesting that the recorded interface states originate from the In0.53Ga0.47As surface

Exploring Defects in Semiconductor Materials Through Constant Fermi Level Ab-Initio Molecular Dynamics

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