Force modulation for enhanced nanoscale electrical sensing

Scanning probe microscopy employing conductive probes is a powerful tool for the investigation and modification of electrical properties at the nanoscale. Application areas include semiconductor metrology, probe-based data storage and materials research. Conductive probes can also be used to emulate nanoscale electrical contacts. However, unreliable electrical contact and tip wear have severely hampered the widespread usage of conductive probes for these applications. In this paper we introduce a force modulation technique for enhanced nanoscale electrical sensing using conductive probes. This technique results in lower friction, reduced tip wear and enhanced electrical contact quality. Experimental results using phase-change material stacks and platinum silicide conductive probes clearly demonstrate the efficacy of the proposed technique. Furthermore, conductive-mode imaging experiments on specially prepared platinum/carbon samples are presented to demonstrate the widespread applicability of this technique

Multiple scattering investigation of the 1T-TaS2 surface termination

Abstract.: Multiple scattering theory based on a cluster model is used to simulate full hemispherical X-ray photoelectron diffraction measurements on a 1T-TaS2(0001) surface. Key points to determine the surface termination are discussed. As the commonly applied single scattering simulations do not give satisfying results, a multiple scattering approach has to be used to accurately simulate the full hemispherical photoelectron diffraction patterns. Differences and similarities between calculations of Ta and S terminated surfaces are presented along with experimental results at room temperature using both, the single and the multiple scattering approaches. We find that the surface is S terminated and that the quantitative difference between the calculations for both terminations permits to show the limits of the single scattering approach for solving surface termination problems. Moreover, by generalizing the results obtained using the multiple scattering approach, we discuss the application of this method to other similar system

Direct evidence for ferroelectric polar distortion in ultrathin lead titanate perovskite films

X-ray photoelectron diffraction is used to directly probe the intra-cell polar atomic distortion and tetragonality associated with ferroelectricity in ultrathin epitaxial PbTiO3 films. Our measurements, combined with ab-initio calculations, unambiguously demonstrate non-centro-symmetry in films a few unit cells thick, imply that films as thin as 3 unit cells still preserve a ferroelectric polar distortion, and also show that there is no thick paraelectric dead layer at the surface

Non-uniform doping across the Fermi surface of NbS2 intercalates

Abstract.: Magnetic ordering of the first row transition metal intercalates of NbS2 due to coupling between the conduction electrons and the intercalated ions has been explained in terms of Fermi surface nesting. We use angle-resolved photoelectron spectroscopy to investigate the Fermi surface topology and the valence band structure of the quasi-two-dimensional layer compounds Mn1/3NbS2 and Ni1/3NbS2. Charge transfer from the intercalant species to the host layer leads to non-uniform, pocket selective doping of the Fermi surface. The implication of our results on the nesting properties are discusse

X-ray photoelectron diffraction study of ultrathin PbTiO3 films

Abstract.: Full hemispherical X-ray photoelectron diffraction (XPD) experiments have been performed to investigate at the atomic level ultrathin epitaxial c-axis oriented PbTiO3 (PTO) films grown on Nb-doped SrTiO3 substrates. Comparison between experiment and theory allows us to identify a preferential ferroelectric polarization state in a 60 Å -thick PTO film. Multiple scattering theory based on a cluster-model [ Phys. Rev. B $\textbf{63}$ , 075404 (2001)] is used to simulate the experiment

Non-uniform doping across the Fermi surface of NbS2_2 intercalates

Magnetic ordering of the first row transition metal intercalates of NbS$_2$ due to coupling between the conduction electrons and the intercalated ions has been explained in terms of Fermi surface nesting. We use angle-resolved photoelectron spectroscopy to investigate the Fermi surface topology and the valence band structure of the quasi-two-dimensional layer compounds Mn$_{1/3}$NbS$_2$ and Ni$_{1/3}$NbS$_2$. Charge transfer from the intercalant species to the host layer leads to non-uniform, pocket selective doping of the Fermi surface. The implication of our results on the nesting properties are discussed

Fermi surface induced lattice distortion in NbTe2_2

The origin of the monoclinic distortion and domain formation in the quasi two-dimensional layer compound NbTe$_2$ is investigated. Angle-resolved photoemission shows that the Fermi surface is pseudogapped over large portions of the Brillouin zone. Ab initio calculation of the electron and phonon bandstructure as well as the static RPA susceptibility lead us to conclude that Fermi surface nesting and electron-phonon coupling play a key role in the lowering of the crystal symmetry and in the formation of the charge density wave phase

High-aspect-ratio, ultrathick, negative-tone near-UV photoresist and its applications for MEMS

Detailed investigations of the limits of a new negative-tone near-UV resist (IBM SU-8) have been performed. SU-8 is an epoxy-based resist designed specifically for ultrathick, high-aspect-ratio MEMS-type applications. We have demonstrated that with single-layer coatings, thicknesses of more than 500 km can be achieved reproducibly. Thicker resist layers can be made by applying multiple coatings, and we have achieved exposures in 1200 IJ-m thick, double-coated SU-8 resist layers. We have found that the aspect ratio for near-UV (400 nm) exposed and developed structures can be greater than 18 and remains constant in the thickness range between 80 and 1200 IJ-m. Vertical sidewall profiles result in good dimensional control over the entire resist thickness. To our knowledge, this is the highest aspect ratio reported for near-UV exposures and the given range of resist thicknesses. These results will open up new possibilities for low-cost LIGA-type processes for MEMS applications. The application potential of SU-8 is demonstrated by several examples of devices and structures fabricated by electroplating and photoplastic techniques. The latter is especially interesting as SU-8 has attractive mechanical properties

Low-cost PDMS seal ring for single-side wet etching of MEMS structures

We describe a new O-ring setup for wet-etching processes of microelectromechanical systems (MEMS) . Our new low-cost approach using siloxane-based seal rings entails the single-side etching of silicon and silicon dioxide using potassium hydroxide and buffered hydrofluoric acid, respectively. With this approach, the wafer is not immersed into the etching solution, but only the side to be etched is in contact with the solution, hence the previously fabricated device elements on the other side of the wafer are not damaged. In one process for etching silicon the etch solution is heated by an infrared lamp. We describe the fabrication of various cantilever-based sensors, such as arrays of 0.8-um thick levers for a chemical/electronic nose, and 5-um-thick silicon cantilevers having piezoresistive sensors. Our technique has gooduniformity and process control and, in addition, eliminates mechanical stress on the fragile wafers incurred by wafer chucks, which are required for the conventional immersion approach. It has improved process yield and reduces the waste of chemicals