684 research outputs found
A nuclear magnetic resonance study of the metal-nonmetal transition in arsenic-doped germanium
An investigation of the metal-nonmetal transition in arsenic-doped germanium (Ge;As) has been performed using the technique of nuclear magnetic resonance. The host Ge⁷³ resonance has been observed in twelve, single crystal, uncompensated specimens with room-temperature carrier concentrations from 7.10¹⁶-1.75.10¹⁹cm⁻³. Measurements of the nuclear spin-lattice relaxation time T₁, Knight shift K and the nuclear linewidth △B for Ge⁷³ are reported. Specifically, data are given at and below liquid helium temperatures for an applied magnetic field of 1. 44T and at 4.2K alone at a field of 5T. The Knight shifts have been measured at 4.2K at 5T and values of △B are given for both fields at 4.2K. The T₁ measurements at low field (1.44T) and Knight shift results show donor density dependences of free-electron type. A strong field dependence of T₁ has however been observed which is inexplicable by free-electron theory. The resonance linewidths are greater than the nuclear dipolar value, even for non-metallic samples, and increase with doping density and magnetic field. At the critical concentration for transition to metallic behaviour K shows an abrupt change from zero to a finite value. The low-field T₁'s are in contrast continuous across the transition but the high-field T₁'s do show a sharp increase below the critical doping density. A calculation shows spin diffusion to be unimportant for the samples and other mechanisms which can generate a field-dependent relaxation time are discussed. Firstly, assuming that the electrons form a homogeneous system and are confined to a narrow impurity band parameterised by an appropriate Bohr radius leads to a field dependence of T₁ in order of magnitude agreement with the data. A second qualitative model in line with recent ideas on the origin of negative magnetoresistance in doped semiconductors invokes the presence of nearly-free moments or Kondo centres in addition to the itinerant electron system. The fluctuation of the moments can furnish a relaxation process in addition to that due to Fermi contact between band electrons and nuclei. An increase in magnetic field inhibits the moment fluctuation rate and thus increases with field. Moreover the presence of moments will lead to resonance line broadening as we have observed. Finally, the magnetic properties of an Anderson transition are discussed and the abrupt appearance of K is shown to be consistent with Mott's interpretation of an Anderson transition. An important overall result is that the electron-electron effects observed in Si:P are absent in the Ge:As system. Simple estimates show that the intra-atomic correlation energy is smaller in n-Ge than n-Si and it is concluded that the metal-nonmetal transition in Ge:As is of Anderson-type and that correlation plays no essential role. This proposal is shown to be in agreement with the results of other experiments in heavily-doped Ge
Hipk2 cooperates with p53 to suppress γ-ray radiation-induced mouse thymic lymphoma
A genome-wide screen for genetic alterations in radiation-induced thymic lymphomas generated from p53+/− and p53−/− mice showed frequent loss of heterozygosity (LOH) on chromosome 6. Fine mapping of these LOH regions revealed three non-overlapping regions, one of which was refined to a 0.2 Mb interval that contained only the gene encoding homeobox-interacting protein kinase 2 (Hipk2). More than 30% of radiation-induced tumors from both p53+/− and p53−/− mice showed heterozygous loss of one Hipk2 allele. Mice carrying a single inactive allele of Hipk2 in the germline were susceptible to induction of tumors by γ-radiation, but most tumors retained and expressed the wild-type allele, suggesting that Hipk2 is a haploinsufficient tumor suppressor gene for mouse lymphoma development. Heterozygous loss of both Hipk2 and p53 confers strong sensitization to radiation-induced lymphoma. We conclude that Hipk2 is a haploinsufficient lymphoma suppressor gene
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
Background estimate in heavy-ion two-body reactions measured by the MAGNEX spectrometer
The MAGNEX magnetic spectrometer is nowadays used in the experimental measurements of rare quasi-elastic reactions between heavy ions at intermediate energy within the NUMEN project. The small cross sections involved in such processes under the large yields due to competitive reaction channels have motivated an accurate control of the background sources. In such view, the not ideal particle identification could introduce spurious contributions which have been identified and evaluated in the present analysis
Suitability of PSA-detected localised prostate cancers for focal therapy: Experience from the ProtecT study
This article is available through a Creative Commons Attribution-NonCommercial-Share Alike 3.0 Unported License. Copyright @ 2011 Cancer Research UK.Background: Contemporary screening for prostate cancer frequently identifies small volume, low-grade lesions. Some clinicians have advocated focal prostatic ablation as an alternative to more aggressive interventions to manage these lesions. To identify which patients might benefit from focal ablative techniques, we analysed the surgical specimens of a large sample of population-detected men undergoing radical prostatectomy as part of a randomised clinical trial. Methods: Surgical specimens from 525 men who underwent prostatectomy within the ProtecT study were analysed to determine tumour volume, location and grade. These findings were compared with information available in the biopsy specimen to examine whether focal therapy could be provided appropriately. Results: Solitary cancers were found in prostatectomy specimens from 19% (100 out of 525) of men. In addition, 73 out of 425 (17%) men had multiple cancers with a solitary significant tumour focus. Thus, 173 out of 525 (33%) men had tumours potentially suitable for focal therapy. The majority of these were small, well-differentiated lesions that appeared to be pathologically insignificant (38–66%). Criteria used to select patients for focal prostatic ablation underestimated the cancer's significance in 26% (34 out of 130) of men and resulted in overtreatment in more than half. Only 18% (24 out of 130) of men presumed eligible for focal therapy, actually had significant solitary lesions. Conclusion: Focal therapy appears inappropriate for the majority of men presenting with prostate-specific antigen-detected localised prostate cancer. Unifocal prostate cancers suitable for focal ablation are difficult to identify pre-operatively using biopsy alone. Most lesions meeting criteria for focal ablation were either more aggressive than expected or posed little threat of progression.National Institute for Health Researc
Setups for eliminating static charge of the ATLAS18 strip sensors
Construction of the new all-silicon Inner Tracker (ITk), developed by the
ATLAS collaboration for the High Luminosity LHC, started in 2020 and is
expected to continue till 2028. The ITk detector will include 18,000 highly
segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are
being manufactured by Hamamatsu Photonics. Mechanical and electrical
characteristics of produced sensors are measured upon their delivery at several
institutes participating in a complex Quality Control (QC) program. The QC
tests performed on each individual sensor check the overall integrity and
quality of the sensor. During the QC testing of production ATLAS18 strip
sensors, an increased number of sensors that failed the electrical tests was
observed. In particular, IV measurements indicated an early breakdown, while
large areas containing several tens or hundreds of neighbouring strips with low
interstrip isolation were identified by the Full strip tests, and leakage
current instabilities were measured in a long-term leakage current stability
setup. Moreover, a high surface electrostatic charge reaching a level of
several hundreds of volts per inch was measured on a large number of sensors
and on the plastic sheets, which mechanically protect these sensors in their
paper envelopes. Accumulated data indicates a clear correlation between
observed electrical failures and the sensor charge-up. To mitigate the
above-described issues, the QC testing sites significantly modified the sensor
handling procedures and introduced sensor recovery techniques based on
irradiation of the sensor surface with UV light or application of intensive
flows of ionized gas. In this presentation, we will describe the setups
implemented by the QC testing sites to treat silicon strip sensors affected by
static charge and evaluate the effectiveness of these setups in terms of
improvement of the sensor performance
A constrained analysis of the 40Ca(18O,18F)40K direct charge exchange reaction mechanism at 275 Mev
The40 Ca(18 O,18 F)40 K single charge exchange (SCE) reaction is explored at an incident energy of 275 MeV and analyzed consistently by collecting the elastic scattering and inelastic scattering data under the same experimental conditions. Full quantum-mechanical SCE calculations of the direct mechanism are performed by including microscopic nuclear structure inputs and adopting either a bare optical potential or a coupled channel equivalent polarization potential (CCEP) constrained by the elastic and inelastic data. The direct SCE mechanism describes the magnitude and shape of the angular distributions rather well, thus suggesting the suppression of sequential multi-nucleon transfer processes
Ethylene supports colonization of plant roots by the mutualistic fungus Piriformospora indica
The mutualistic basidiomycete Piriformospora indica colonizes roots of mono- and dicotyledonous plants, and thereby improves plant health and yield. Given the capability of P. indica to colonize a broad range of hosts, it must be anticipated that the fungus has evolved efficient strategies to overcome plant immunity and to establish a proper environment for nutrient acquisition and reproduction. Global gene expression studies in barley identified various ethylene synthesis and signaling components that were differentially regulated in P. indica-colonized roots. Based on these findings we examined the impact of ethylene in the symbiotic association. The data presented here suggest that P. indica induces ethylene synthesis in barley and Arabidopsis roots during colonization. Moreover, impaired ethylene signaling resulted in reduced root colonization, Arabidopsis mutants exhibiting constitutive ethylene signaling, -synthesis or ethylene-related defense were hyper-susceptible to P. indica. Our data suggest that ethylene signaling is required for symbiotic root colonization by P. indica
Preparation and Instability of Nanocrystalline Cuprous Nitride
Low-dimensional cuprous nitride (Cu3N) was synthesized by nitridation (ammonolysis) of cuprous oxide (Cu2O) nanocrystals using either ammonia (NH3) or urea (H2NCONH2) as the nitrogen source. The resulting nanocrystalline Cu3N spontaneously decomposes to nanocrystalline CuO in the presence of both water and oxygen from air at room temperature. Ammonia was produced in 60% chemical yield during Cu3N decomposition, as measured using the colorimetric indophenol method. Because Cu3N decomposition requires H2O and produces substoichiometric amounts of NH3\u3e, we conclude that this reaction proceeds through a complex stoichiometry that involves the concomitant release of both N2 and NH3. This is a thermodynamically unfavorable outcome, strongly indicating that H2O (and thus NH3 production) facilitate the kinetics of the reaction by lowering the energy barrier for Cu3N decomposition. The three different Cu2O, Cu3N, and CuO nanocrystalline phases were characterized by a combination of optical absorption, powder X-ray diffraction, transmission electron microscopy, and electronic density of states obtained from electronic structure calculations on the bulk solids. The relative ease of interconversion between these interesting and inexpensive materials bears possible implications for catalytic and optoelectronic applications
Experimental challenges for the measurement of the116Cd(20Ne,20O)116Sn double charge exchange reaction at 15 AMeV
The knowledge of the nuclear matrix elements (NME) entering in the expression of
the half-life of the neutrinoless double beta decay is fundamental for neutrino physics
.
Information on the nuclear matrix elements can be obtained by measuring the absolute cross
section of double charge exchange nuclear reactions. The two processes present some
similarities, the initial and final-state wave functions are the same and the transition operators
are similar. The experimental measurements of double charge exchange reactions induced by
heavy ions present a number of challenging aspects, since such reactions are characterized by
very low cross sections. Such difficulties are discussed for the measurement of the
116Cd(20Ne,20O)116Sn reaction at 15 AMeV
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