Exciton G Factor Of Type-ii Inp Gaas Single Quantum Dots

We investigated the magneto-optical properties of type-II InP GaAs quantum dots using single-dot spectroscopy. The emission energy from individual dots presents a quadratic diamagnetic shift and a linear Zeeman splitting as a function of magnetic fields up to 10 T, as previously observed for type-I systems. We analyzed the in-plane localization of the carriers using the diamagnetic shift results. The values for the exciton g factor obtained for a large number of a InP GaAs dots are mainly constant, independent of the emission energy, and therefore, of the quantum dot dimensions. The result is attributed to the weak confinement of the holes in type-II InP GaAs quantum dots. © 2006 The American Physical Society.733Toda, Y., Shinomori, S., Suzuki, K., Arakawa, Y., (1998) Appl. Phys. Lett., 73, p. 517. , APPLAB 0003-6951 10.1063/1.121919Bayer, M., Kuther, A., Schäfer, F., Reithmaier, J.P., Forchel, A., (1999) Phys. Rev. B, 60, p. 8481. , PRBMDO. 0163-1829. 10.1103/PhysRevB.60.R8481Sugisaki, M., Ren, H.-W., Nishi, K., Sugou, S., Okuno, T., Masumoto, Y., (1998) Physica B, 256-258, p. 169. , PHYBE3 0921-4526Kotlyar, R., Reinecke, T.L., Bayer, M., Forchel, A., (2001) Phys. Rev. B, 63, p. 085310. , PRBMDO 0163-1829 10.1103/PhysRevB.63.085310Ribeiro, E., Govorov, A.O., Carvalho Jr., W., Medeiros-Ribeiro, G., (2004) Phys. Rev. Lett., 92, p. 126402. , PRLTAO 0031-9007 10.1103/PhysRevLett.92.126402Janssens, K.L., Partoens, B., Peeters, F.M., (2002) Phys. Rev. B, 66, p. 075314. , PRBMDO 0163-1829 10.1103/PhysRevB.66.075314Kalameitsev, A.B., Kovalev, V.M., Govorov, A.O., (1989) JETP Lett., 68, p. 669. , JTPLA2 0021-3640 10.1134/1.567926Sugisaki, M., Ren, H.W., Nair, S.V., Nishi, K., Masumoto, Y., (2002) Phys. Rev. B, 66, p. 235309. , PRBMDO 0163-1829 10.1103/PhysRevB.66.235309Godoy, M.P.F., Nakaema, M.K.K., Iikawa, F., Carvalho Jr., W., Ribeiro, E., Gobby, A.L., (2004) Rev. Sci. Instrum., 75, p. 1947. , RSINAK 0034-6748 10.1063/1.1753090Walck, S.N., Reinecke, T.L., (1998) Phys. Rev. B, 57, p. 9088. , PRBMDO 0163-1829 10.1103/PhysRevB.57.9088Laheld, U.E.H., Pedersen, F.B., Hemmer, P.C., (1993) Phys. Rev. B, 48, p. 4659. , PRBMDO 0163-1829 10.1103/PhysRevB.48.4659Bastard, G., Mendez, E.E., Chang, L.L., Esaki, L., (1982) Phys. Rev. B, 26, p. 1974. , PRBMDO 0163-1829 10.1103/PhysRevB.26.1974Nakaoka, T., Saito, T., Tatebayashi, J., Arakawa, Y., (2004) Phys. Rev. B, 70, p. 235337. , PRBMDO 0163-1829 10.1103/PhysRevB.70.235337Yugova, I.A., Ya. Gerlovin, I., Davydov, V.G., Ignatiev, I.V., Kozin, I.E., Ren, H.W., Sugisaki, M., Masumoto, Y., (2002) Phys. Rev. B, 66, p. 235309. , PRBMDO 0163-1829 10.1103/PhysRevB.66.235309Willmann, F., Suga, S., Dreybrodt, W., Cho, K., (1974) Solid State Commun., 14, p. 783. , SSCOA4 0038-1098Landi, S.M., Tribuzy, C.V.B., Souza, P.L., Butendeich, R., Bittencourt, A.C., Marques, G.E., (2003) Phys. Rev. B, 67, p. 085304. , PRBMDO 0163-1829 10.1103/PhysRevB.67.08530

Carrier Dynamics In Stacked Inpgaas Quantum Dots

We investigated two stacked layers of InPGaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. © 2007 American Institute of Physics.9112Goldstein, L., Glas, F., Marzin, M.J.Y., Charasse, N., Le Roux, G., (1985) Appl. Phys. Lett., 47, p. 1099Xie, Q., Madhkar, A., Chen, P., Kobayashi, N., (1995) Phys. Rev. Lett., 75, p. 2542Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Kirstaedter, N., Böhmer, J., Schmidt, O., Bimberg, D., Heydenreich, J., (1996) Phys. Rev. B, 54, p. 8743Solomon, G.S., Trezza, J.A., Marchall, A.F., Harris Jr., J.S., (1996) Phys. Rev. Lett., 76, p. 952Sugiyama, Y., Nakata, Y., Futatsugi, T., Sugawara, M., Awano, Y., Yokoyama, N., (1996) Jpn. J. Appl. Phys., Part 2, 36, p. 158Schmidt, O.G., Kienzie, O., Hao, Y., Eberl, K., (1999) Appl. Phys. Lett., 74, p. 1272Chang, W.-H., Chen, W.-Y., Chou, A.-T., Hsu, T.-M., Chen, P.-S., Pei, Z., Lai, L.-S., (2003) J. Appl. Phys., 93, p. 4999Susuki, K., Hogg, R.A., Arakawa, Y., (1999) J. Appl. Phys., 85, p. 8349Sun, C.-K., Wang, G., Bowers, J.E., Brar, B., Blank, H.-R., Kroemer, H., Pilkuhn, M.H., (1996) Appl. Phys. Lett., 68, p. 1543Hatami, F., Grundmann, M., Ledentsov, N.N., Heinrichsdorff, F., Heitz, R., Böhrer, J., Bimberg, D., Alferov Zh., I., (1998) Phys. Rev. B, 57, p. 4635De Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Caetano, R.A., Madureira, J.R., Bittencourt, A.C.R., (2006) Phys. Rev. B, 73, p. 033309Wang, B., Chua, S.-J., (2001) Appl. Phys. Lett., 78, p. 628Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Ribeiro, E., Medeiros-Ribeiro, G., Carvalho Jr., W., Maialle, M.Z., Degani, M.H., (2002) Appl. Phys. Lett., 81, p. 2743Zundel, M.K., Specht, P., Eberl, K., Jin-Phillipp, N.Y., Phillipp, F., (1997) Appl. Phys. Lett., 71, p. 2972Sanguinetti, S., Henini, M., Grassi Alessi, M., Capizzi, M., Frigeri, P., Franchi, S., (1999) Phys. Rev. B, 60, p. 827

Structural And Optical Properties Of Inp Quantum Dots Grown On Gaas (001)

We present structural and optical properties of type-II self-assembled InP/GaAs quantum dots using different techniques. The results reveal that the uncapped InP dots present an efficient optical emission and are partially relaxed: strain relaxation increases with the amount of InP deposited. The photoluminescence spectra show two optical emission bands associated to the quantum dots, in agreement with the bi-modal dot-height distribution observed by atomic force microscopy. We observed distinct photoluminescence results for uncapped and capped samples, which are mainly attributed to surface state and strain relaxation effects. A remarkable result is the large blue shift of the optical emission band from uncapped sample as compared to capped one for increasing excitation intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.42238240Pistol, M.-E., Carlsson, N., Persson, C., Seifert, W., Samuelson, L., (1995) Appl. Phys. Lett, 67, p. 1438Persson, J., Hakanson, U., Johansson, M.K.J., Samuelson, L., Pistol, M.-E., (2005) Phys. Rev. B, 72, p. 085302Nakaema, M.K.K., Iikawa, F., Brasil, M.J.S.P., Ribeiro, E., Medeiros-Ribeiro, G., Carvalho Jr., W., Maialle, M.Z., Degani, M.H., (2002) Appl. Phys. Lett, 81, p. 2743de Godoy, M.P.F., Gomes, P.F., Nakaema, M.K.K., Caetano, R.A., Iikawa, F., Brasil, M.J.S.P., Bortoleto, J.R.R., Marques, G.E., (2006) Phys. Rev. B, 73, p. 33309Bortoleto, J.R.R., Gutiérrez, H.R., Cotta, M.A., Bettini, J., (2005) Appl. Phys. Lett, 87, p. 13105Casey Jr., H.G., Buehler, E., (1977) Appl. Phys. Lett, 30, p. 247Yablonovitch, E., Bhat, R., Zah, C.E., Gmitter, T.J., Koza, M.A., (1992) Appl. Phys. Lett, 60, p. 37