Improvement of the mass separation power of a cyclotron by using the vertical selection method

International audienceIt is well known that cyclotrons are very good mass separators, specially when the number of turns in the machine is large. This property is particularly interesting if the cyclotron unavoidably accelerates multiple species of radioactive beams simultaneously, which is the case for the cyclotron CIME at GANIL. We propose to improve the natural mass separation power by using a vertical resonance effect: it consists of putting two small electrodes between the poles, which provide a vertical electric field operating at two frequencies close to twice the RF frequency and which are tuned with respect to the vertical betatron oscillation. A prototype has been designed and built at GANIL, and tested successfully in the cyclotron CIME this September

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Self-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with AlN spacer layers were implanted with Europium ions to fluences of 1013, 1014, and 1015 cm−2. The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the [0001] direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000 °C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed. © 2010 American Institute of PhysicsFCT-PTDC/CTM/100756/2008program PESSOA EGIDE/GRICESFCT-SFRH/BD/45774/2008FCT-SFRH/BD/44635/200

Growth and optical properties of GaN/AlN quantum wells

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from the dependence of the emission energy on the well width.Comment: Submitted to AP

Step by step capping and strain state of GaN/AlN quantum dots studied by grazing incidence diffraction anomalous fine structure

The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in terms of strain and local environment, as a function of the AlN cap layer thickness, by means of grazing incidence anomalous diffraction. That is, the X-ray photons energy is tuned across the Ga absorption K-edge which makes diffraction chemically selective. Measurement of \textit{hkl}-scans, close to the AlN (30-30) Bragg reflection, at several energies across the Ga K-edge, allows the extraction of the Ga partial structure factor, from which the in-plane strain of GaN QDs is deduced. From the fixed-Q energy-dependent diffracted intensity spectra, measured for diffraction-selected iso-strain regions corresponding to the average in-plane strain state of the QDs, quantitative information regarding composition and the out-of-plane strain has been obtained. We recover the in-plane and out-of-plane strains in the dots. The comparison to the biaxial elastic strain in a pseudomorphic layer indicates a tendency to an over-strained regime.Comment: submitted to PR

Comércio Justo como Estratégia de Internacionalização de Pequenos Negócios: Empoderamento para as Rendeiras da Arte Renascença no Semi-Árido Pernambucano

A pesquisa foi realizada com o fito de avaliar as reais possibilidades das mulheres que produzem rendas no agreste pernambucano virem a internacionalizar sua produção se beneficiando do comércio justo como forma de adquirir maior autonomia frente aos atravessadores que exploram naquela região a mão-de-obra local. A metodologia utilizada consistiu em repertoriar as principais dificuldades da comunidade rendeira nos municípios de Pesqueira, Poção e adjacências que respondem por mais de 80% da renda renascença produzida no Brasil e em contra-ponto, compreender, mediante pesquisa de campo, os mecanismos que regem o comércio justo na Europa, em particular na França, onde foram contactados no período de maio de 2008 à julho de 2009 inúmeros agentes atuando na comercialização de produtos do comércio alternativo. Em conclusão, descobriu-se que dentre os atores da filière équitable os principais influenciadores eram os importadores europeus que mantinham relações estreitas com as comunidades produtoras nos paises do Sul. Para as rendeiras do agreste, ficou claro que suas melhores chances em participar do movimento encontram-se na moda ética (peças confeccionadas com algodão orgânico) em plena expansão na Europa.Comércio justo, internacionalização, intermediários, renda renascença

SPIRAL facility at GANIL : ion beam simulation and optimisation method for the CIME cyclotron injection system

International audienc

First results obtained using the CENBG nanobeam line: performances and applications

A high resolution focused beam line has been recently installed on the AIFIRA (“Applications Interdisciplinaires des Faisceaux d’Ions en Région Aquitaine”) facility at CENBG. This nanobeam line, based on a doublet–triplet configuration of Oxford Microbeam Ltd. OM-50™ quadrupoles, offers the opportunity to focus protons, deuterons and alpha particles in the MeV energy range to a sub-micrometer beam spot. The beam optics design has been studied in detail and optimized using detailed ray-tracing simulations and the full mechanical design of the beam line was reported in the Debrecen ICNMTA conference in 2008. During the last two years, the lenses have been carefully aligned and the target chamber has been fully equipped with particle and X-ray detectors, microscopes and precise positioning stages. The beam line is now operational and has been used for its firstapplications to ion beam analysis. Interestingly, this set-up turned out to be a very versatile tool for a wide range of applications. Indeed, even if it was not intended during the design phase, the ion optics configuration offers the opportunity to work either with a high current microbeam (using the triplet only) or with a lower current beam presenting a sub-micrometer resolution (using the doublet–triplet configuration). The performances of the CENBGnanobeam line are presented for both configurations. Quantitative data concerning the beam lateral resolutions at different beam currents are provided. Finally, the firstresults obtained for different types of application are shown, including nuclear reaction analysis at the micrometer scale and the firstresults on biological sample

Incorporation of europium into gan nanowires by ion implantation

Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies. Europium doping of GaN NWs was performed by ion implantation, and structural and optical properties were assessed in comparison to thin film reference samples. Despite some surface degradation for high implantation fluences, the NW core remains of high crystalline quality with lower concentrations of extended defects than observed in ion-implanted thin films. Strain introduced by implantation defects is efficiently relaxed in NWs and the measured deformation stays much below that in thin films implanted in the same conditions. Optical activation is achieved for all samples after annealing, and while optical centers are similar in all samples, Eu^3+ emission from NW samples is shown to be less affected by residual implantation damage than for the case of thin films. The incorporation of Eu in GaN NWs was further investigated by nano-cathodoluminescence and X-ray absorption spectroscopy (XAS). Maps of the Eu-emission intensity within a single NW agree well with the Eu-distribution predicted by Monte Carlo simulations, suggesting that no pronounced Eu-diffusion takes place. XAS shows that 70-80% of Eu is found in the 3+ charge state while 20-30% is 2+ attributed to residual implantation defects. A similar local environment was found for Eu in NWs and thin films: for low fluences, Eu is mainly incorporated on substitutional Ga-sites, while for high fluences XAS points at the formation of a local EuN-like next neighbor structure. The results reveal the high potential of ion implantation as a processing tool at the nanoscale