Optical monitoring of technological processes for fabrication of thin-film nanostructures

Thisworkillustratesapplicationofthe uniquefiber-optic instrumentationforin situmonitoringofseveral technologicalprocessescommonlyusedinfabricationof semiconducting thin-film nanostructures. This instrumentation is basedonprinciplesoflowcoherenttandeminterferometry, whichdetermineshighsensitivityandprecision in measuring basic technological parameters, such as thickness of forming layers, temperature and bending of the substrate.The probing wavelength = 1.55 m allows carrying out the measurements on majority of substrates for semiconductor technology: Si, SOI, GaAs, InP, GaP, Al2O3, diamond, ZrO2:Y. Monitoring of such processes as MOVPE, MBEandplasmaetchingin various set-ups was realized. The absolute resolution achieved in these experiments was limited only by calibration accuracy and corresponds to 1 at sensitivity of 0.01 . The accuracy limit in estimating the thickness of layers during their growth is 2 nm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2068

An Assessment of Policy Measures to Support Russia's Real Economy

"This paper presents the results of an analytical project on the design and approbation of methodology for assessing and monitoring the measures taken by the government of the Russian Federation in response to the recent worldwide fiscal crisis. The paper is based on our analysis of about 100 measures initiated between October 2008 and March 2009 to support Russia's real economy. Within the scope of this analysis, we singled out the main beneficiaries according to industry and enterprise scale, and estimated the effects of the measures during the crisis and recovery phases. The paper also describes the major risks the Russian government will face as a result of implementing the aforementioned measures and identifies the key problems and inconsistencies of the anti-crisis programme." (author's abstract

Electrical Isolation Of A Silicon δ-doped Layer In Gaas By Ion Irradiation

The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be ≈2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values > 109Ω/□ after subsequent thermal annealing, is limited to temperatures below 400°C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅650°C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures >600°C . © 1999 American Institute of Physics.751319171919Shubert, E.F., (1990) J. Vac. Sci. Technol. A, 8, p. 2980Daniltsev, V.M., Irin, I.V., Murel, A.V., Khrykin, O.I., Shashkin, V.I., (1994) Inorg. Mater. (Transl. of Neorg. Mater.), 30, p. 948Zrenner, A., Koch, F., Ploog, K., (1987) Inst. Phys. Conf. Ser., 91, p. 171Van Der Pauw, L.J., (1958) Philips Res. Rep., 13, p. 1De Souza, J.P., Danilov, I., Boudinov, H., (1997) J. Appl. Phys., 81, p. 650Ziegler, J.F., Biersack, J.P., Littmark, U., (1985) The Stopping and Range of Ions in Solids, 1. , Pergamon, OxfordDe Souza, J.P., Danilov, I., Boudinov, H., (1998) J. Appl. Phys., 84, p. 4757De Souza, J.P., Danilov, I., Boudinov, H., (1996) Appl. Phys. Lett., 68, p. 535De Souza, J.P., Danilov, I., Boudinov, H., (1998) Radiat. Eff. Defects Solids, 147, p. 109Grandidier, B., Stiévenard, D., Nys, J.P., Wallart, X., (1998) Appl. Phys. Lett., 72, p. 245

Does theory of quantum correction to conductivity agree with experimental data in 2D systems?

The quantum correction to the conductivity have been studied in two types of 2D heterostructures: with doped quantum well and doped barriers. The consistent analysis shows that in the structures where electrons occupy the states in quantum well only, all the temperature and magnetic field dependencies of the components of resistivity tensor are well described by the theories of quantum corrections. The contribution of electron-electron interaction to the conductivity have been determined reliably in the structures with different electron density. A possible reason of large scatter in experimental data concerning the contribution of electron-electron interaction, obtained in previous papers, and the role of the carriers, occupied the states of the doped layers, is discussed.Comment: 10 pages with 9 figure

Discovery of Novel Protein Coding Genes and Antisense Regulatory Transcripts in Eukaryotes

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