Self-formed LaAlO3/SrTiO3LaAlO_3/SrTiO_3 Micro-Membranes

Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.Comment: 8 pages, 4 figure

Using Polarized Spectroscopy to Investigate Order in Thin-Films of Ionic Self-Assembled Materials Based on Azo-Dyes

Three series of ionic self-assembled materials based on anionic azo-dyes and cationic benzalkonium surfactants were synthesized and thin films were prepared by spin-casting. These thin films appear isotropic when investigated with polarized optical microscopy, although they are highly anisotropic. Here, three series of homologous materials were studied to rationalize this observation. Investigating thin films of ordered molecular materials relies to a large extent on advanced experimental methods and large research infrastructure. A statement that in particular is true for thin films with nanoscopic order, where X-ray reflectometry, X-ray and neutron scattering, electron microscopy and atom force microscopy (AFM) has to be used to elucidate film morphology and the underlying molecular structure. Here, the thin films were investigated using AFM, optical microscopy and polarized absorption spectroscopy. It was shown that by using numerical method for treating the polarized absorption spectroscopy data, the molecular structure can be elucidated. Further, it was shown that polarized optical spectroscopy is a general tool that allows determination of the molecular order in thin films. Finally, it was found that full control of thermal history and rigorous control of the ionic self-assembly conditions are required to reproducibly make these materials of high nanoscopic order. Similarly, the conditions for spin-casting are shown to be determining for the overall thin film morphology, while molecular order is maintained

Within-sibship genome-wide association analyses decrease bias in estimates of direct genetic effects

Estimates from genome-wide association studies (GWAS) of unrelated individuals capture effects of inherited variation (direct effects), demography (population stratification, assortative mating) and relatives (indirect genetic effects). Family-based GWAS designs can control for demographic and indirect genetic effects, but large-scale family datasets have been lacking. We combined data from 178,086 siblings from 19 cohorts to generate population (between-family) and within-sibship (within-family) GWAS estimates for 25 phenotypes. Within-sibship GWAS estimates were smaller than population estimates for height, educational attainment, age at first birth, number of children, cognitive ability, depressive symptoms and smoking. Some differences were observed in downstream SNP heritability, genetic correlations and Mendelian randomization analyses. For example, the within-sibship genetic correlation between educational attainment and body mass index attenuated towards zero. In contrast, analyses of most molecular phenotypes (for example, low-density lipoprotein-cholesterol) were generally consistent. We also found within-sibship evidence of polygenic adaptation on taller height. Here, we illustrate the importance of family-based GWAS data for phenotypes influenced by demographic and indirect genetic effects

Reconstruction of Low Dimensional Electronic States by Altering the Chemical Arrangement at the SrTiO₃ Surface

Developing reliable methods for modulating the electronic structure of the 2D electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Herein, it is shown that relatively simple surface preparation reconstructs the 2DEG at the SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy with ab initio calculations, that the modulation of the surface band structures can be effectively achieved via transforming the chemical composition at the atomic scale is found. In addition, ARPES experiments demonstrate that vacuum ultraviolet light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction . This study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface

Within-sibship genome-wide association analyses decrease bias in estimates of direct genetic effects

Estimates from genome-wide association studies (GWAS) of unrelated individuals capture effects of inherited variation (direct effects), demography (population stratification, assortative mating) and relatives (indirect genetic effects). Family-based GWAS designs can control for demographic and indirect genetic effects, but large-scale family datasets have been lacking. We combined data from 178,086 siblings from 19 cohorts to generate population (between-family) and within-sibship (within-family) GWAS estimates for 25 phenotypes. Within-sibship GWAS estimates were smaller than population estimates for height, educational attainment, age at first birth, number of children, cognitive ability, depressive symptoms and smoking. Some differences were observed in downstream SNP heritability, genetic correlations and Mendelian randomization analyses. For example, the within-sibship genetic correlation between educational attainment and body mass index attenuated towards zero. In contrast, analyses of most molecular phenotypes (for example, low-density lipoprotein-cholesterol) were generally consistent. We also found within-sibship evidence of polygenic adaptation on taller height. Here, we illustrate the importance of family-based GWAS data for phenotypes influenced by demographic and indirect genetic effects

Within-sibship genome-wide association analyses decrease bias in estimates of direct genetic effects.

Funder: Jacobs FoundationEstimates from genome-wide association studies (GWAS) of unrelated individuals capture effects of inherited variation (direct effects), demography (population stratification, assortative mating) and relatives (indirect genetic effects). Family-based GWAS designs can control for demographic and indirect genetic effects, but large-scale family datasets have been lacking. We combined data from 178,086 siblings from 19 cohorts to generate population (between-family) and within-sibship (within-family) GWAS estimates for 25 phenotypes. Within-sibship GWAS estimates were smaller than population estimates for height, educational attainment, age at first birth, number of children, cognitive ability, depressive symptoms and smoking. Some differences were observed in downstream SNP heritability, genetic correlations and Mendelian randomization analyses. For example, the within-sibship genetic correlation between educational attainment and body mass index attenuated towards zero. In contrast, analyses of most molecular phenotypes (for example, low-density lipoprotein-cholesterol) were generally consistent. We also found within-sibship evidence of polygenic adaptation on taller height. Here, we illustrate the importance of family-based GWAS data for phenotypes influenced by demographic and indirect genetic effects