124 research outputs found

    Applying machine learning to improve simulations of a chaotic dynamical system using empirical error correction

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    Dynamical weather and climate prediction models underpin many studies of the Earth system and hold the promise of being able to make robust projections of future climate change based on physical laws. However, simulations from these models still show many differences compared with observations. Machine learning has been applied to solve certain prediction problems with great success, and recently it's been proposed that this could replace the role of physically-derived dynamical weather and climate models to give better quality simulations. Here, instead, a framework using machine learning together with physically-derived models is tested, in which it is learnt how to correct the errors of the latter from timestep to timestep. This maintains the physical understanding built into the models, whilst allowing performance improvements, and also requires much simpler algorithms and less training data. This is tested in the context of simulating the chaotic Lorenz '96 system, and it is shown that the approach yields models that are stable and that give both improved skill in initialised predictions and better long-term climate statistics. Improvements in long-term statistics are smaller than for single time-step tendencies, however, indicating that it would be valuable to develop methods that target improvements on longer time scales. Future strategies for the development of this approach and possible applications to making progress on important scientific problems are discussed.Comment: 26p, 7 figures To be published in Journal of Advances in Modeling Earth System

    MacV: VCSELs for miniature atomic clocks

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    Compact coherent population trapping (CPT) based clocks require single-mode, low-power consumption, high-speed and polarization-stable laser sources. We report our progress in developing customized vertical cavity surface emitting laser (VCSEL) diodes designed for operating on the D1 transition of cesium, and specifically tailored for CPT-based atomic clocks. The VCSELs provide high power (>1 mW), narrow linewidths (15 dB). Preliminary spectroscopy has been observed

    Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si

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    InAs quantum-dot (QD) lasers emitting at 1300nm with nominally undoped and modulated p-type doping are studied. Modal-gain measurements indicate a higher gain can be achieved from the ground-state for a given Fermi-level separation with p-doping and a reduced temperature-dependence of threshold current for short-cavity lasers

    Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure

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    In this work, the feasibility of a monolithically integrated laser and electroabsorption modulator based on the same active quantum dot epistructure is studied. The net modal gain and the absorption in the modulator were measured using the segmented contact method from 25 °C to 125 °C. The maximum of the net modal gain active region of the laser decreases from 10 cm -1 at 25 °C to 3.9 cm -1 at 125 °C. The non-optimized maximum extinction ratio of the modulator, 4.1 dB·mm -1 , is almost constant until 25 °C. The wavelengths at which the net modal gain and the change in absorption are maximum shifts with temperature by 0.04 eV

    Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

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    Vertical cavity surface emitting laser (VCSEL) devices and arrays are increasingly important in meeting the demands of today’s wireless communication and sensing systems. Understanding the origin of non-uniform wet thermal oxidation across large-area VCSEL wafers is a crucial issue to ensure highly reliable, volume-manufactured oxide-confined VCSEL devices. As VCSEL wafer diameters approach 200 mm, germanium (Ge) is emerging as an alternative substrate solution. To this end, we investigate the uniformity of 940 nm-emitting VCSEL performance across 150 mm diameter GaAs- and Ge-substrates, comparing the oxidation method in each case. Nominally identical epitaxial structures are used to evaluate the strain induced wafer bow for each substrate type with Ge exhibiting a reduction of over 100 μm in the peak-to-valley distortion when compared with GaAs. This wafer bow is found to be the principal cause of centre-to-edge oxidation non-uniformity when utilising a conduction-heated chuck furnace, in comparison to a convection-heated tube furnace. Using on-wafer testing of threshold current, differential resistance, and emission wavelength, device performance is demonstrated for the first time across a 150 mm Ge wafer, and is shown to be comparable to performance on GaAs substrates, when the effects of oxidation uniformity are removed. These results provide evidence that there is a realistic path to manufacturing high yield VCSELs, over wafer diameters approaching those used in Si-photonics, via Ge substrates
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