31st Annual IEEE Photonics Conference (IPC) of the IEEE-Photonics-Society
Doi
Abstract
InAs quantum-dot (QD) lasers emitting at 1300nm with nominally undoped and modulated p-type doping are studied. Modal-gain measurements indicate a higher gain can be achieved from the ground-state for a given Fermi-level separation with p-doping and a reduced temperature-dependence of threshold current for short-cavity lasers