A portable MBE system for in situ X-Ray investigations at synchrotron beamlines

A portable synchrotron MBE system is designed and applied for in situ investigations. The growth chamber is equipped with all the standard MBE components such as effusion cells with shutters, main shutter, cooling shroud, manipulator, RHEED setup and pressure gauges. The characteristic feature of the system is the beryllium windows which are used for in situ x-ray measurements. An UHV sample transfer case allows in-vacuo transfer of samples prepared elsewhere. We describe the system design and demonstrate it's performance by investigating the annealing process of buried InGaAs self organized quantum dots

Infants’ vocalizations at 6 months predict their productive vocabulary at one year

Long before their first words, children communicate by using speech-like vocalizations. These protophones might be indicative of infants' later language development. We here examined infants' (n = 56) early vocalizations at 6 months (vocal reactivity scale of the IBQ-R) as a predictor of their expressive and receptive language at 12 months (German version of the CDI). Regression analyses revealed vocalizations to significantly predict expressive, but not receptive language. Our findings in German-learning 6-month-olds extend previous predictive evidence of early vocalizations reported for older infants. Together these findings are informative in light of early assessments monitoring typical and atypical language development

Cu-doped GaN grown by molecular beam epitaxy

Cu-doped GaN is a promising candidate for a nitride-based diluted magnetic semiconductor. Theoretical predictions show the possibility of ferromagnetism and high spinpolarization for certain arrangements of Cu atoms in the GaN lattice. Initial experimental results have already indicated ferromagnetism. However, the influence of structural defects on the ferromagnetic order in Cu-doped nitrides is not clear. Hence, the origin of the ferromagnetism is still under debate. We have used density functional theory (DFT) to verify previous theoretical predictions and to investigate the effects of the position of Cu atoms on the ferromagnetic properties. Our DFT calculations show high degrees of spin-polarization, independent of the arrangement of Cu atoms. Additionally, we have investigated the growth of Cu-doped GaN by molecular beam epitaxy. The influence of parameters, such as Cu to Ga ratio and growth temperature, on the structural and magnetic properties will be discussed

Radius dependent shift of surface plasmon frequency in large metallic nanospheres: theory and experiment

Theoretical description of oscillations of electron liquid in large metallic nanospheres (with radius of few tens nm) is formulated within random-phase-approximation semiclassical scheme. Spectrum of plasmons is determined including both surface and volume type excitations. It is demonstrated that only surface plasmons of dipole type can be excited by homogeneous dynamical electric field. The Lorentz friction due to irradiation of electro-magnetic wave by plasmon oscillations is analyzed with respect to the sphere dimension. The resulting shift of resonance frequency turns out to be strongly sensitive to the sphere radius. The form of e-m response of the system of metallic nanospheres embedded in the dielectric medium is found. The theoretical predictions are verified by a measurement of extinction of light due to plasmon excitations in nanosphere colloidal water solutions, for Au and Ag metallic components with radius from 10 to 75 nm. Theoretical predictions and experiments clearly agree in the positions of surface plasmon resonances and in an emergence of the first volume plasmon resonance in the e-m response of the system for limiting big nanosphere radii, when dipole approximation is not exact

Gaussian random waves in elastic media

Similar to the Berry conjecture of quantum chaos we consider elastic analogue which incorporates longitudinal and transverse elastic displacements with corresponding wave vectors. Based on that we derive the correlation functions for amplitudes and intensities of elastic displacements. Comparison to numerics in a quarter Bunimovich stadium demonstrates excellent agreement.Comment: 4 pages, 4 figure

Early cortical surface plasticity relates to basic mathematical learning

Children lay the foundation for later academic achievement by acquiring core mathematical abilities in the first school years. Neural reorganization processes associated with individual differences in early mathematical learning, however, are still poorly understood. To fill this research gap, we followed a sample of 5-6-year-old children longitudinally to the end of second grade in school (age 7–8 years) combining magnetic resonance imaging (MRI) with comprehensive behavioral assessments. We report significant links between the rate of neuroplastic change of cortical surface anatomy, and children's early mathematical skills. In particular, most of the behavioral variance (about 73%) of children's visuospatial abilities was explained by the change in cortical thickness in the right superior parietal cortex. Moreover, half of the behavioral variance (about 55%) of children's arithmetic abilities was explained by the change in cortical folding in the right intraparietal sulcus. Additional associations for arithmetic abilities were found for cortical thickness change of the right temporal lobe, and the left middle occipital gyrus. Visuospatial abilities were related to right precentral and supramarginal thickness, as well as right medial frontal gyrus folding plasticity. These effects were independent of other individual differences in IQ, literacy and maternal education. Our findings highlight the critical role of cortical plasticity during the acquisition of fundamental mathematical abilities

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy (MBE). This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leakage current of three orders of magnitude was observed for Schottky diodes fabricated on the modified surface compared to diodes fabricated on the unmodified surface for reverse-bias voltages as large as -20 V. In addition to suppressing reverse-bias leakage, the surface treatment was found to improve substantially the ideality factor of the modified surface diodes compared to that of unmodified surface diodes, suggesting that such a surface modification process could be useful for a variety of GaN-based electronic devices. (C) 2003 American Institute of Physics

Auditory brainstem measures and genotyping boost the prediction of literacy : a longitudinal study on early markers of dyslexia

Literacy acquisition is impaired in children with developmental dyslexia resulting in lifelong struggle to read and spell. Proper diagnosis is usually late and commonly achieved after structured schooling started, which causes delayed interventions. Legascreen set out to develop a preclinical screening to identify children at risk of developmental dyslexia. To this end we examined 93 preliterate German children, half of them with a family history of dyslexia and half of them without a family history. We assessed standard demographic and behavioral precursors of literacy, acquired saliva samples for genotyping, and recorded speech-evoked brainstem responses to add an objective physiological measure. Reading and spelling was assessed after two years of structured literacy instruction. Multifactorial regression analyses considering demographic information, genotypes, and auditory brainstem encoding, predicted children’s literacy skills to varying degrees. These predictions were improved by adding the standard psychometrics with a slightly higher impact on spelling compared to reading comprehension. Our findings suggest that gene-brain-behavior profiling has the potential to determine the risk of developmental dyslexia. At the same time our results imply the need for a more sophisticated assessment to fully account for the disparate cognitive profiles and the multifactorial basis of developmental dyslexia