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Identifying sources of error in cross-national questionnaires: Application of an error source typology to cognitive interview data
This article evaluates a Cross National Error Source Typology that was developed as a tool for making cross-national questionnaire design more effective. Cross-national questionnaire design has a number of potential error sources that are either not present or are less common in single nation studies. Tools that help to identify these error sources better inform the survey researcher when improving a source questionnaire that serves as the basis for translation. This article outlines the theoretical and practical development of the typology and evaluates an attempt to apply it to cross-national cognitive interviewing findings from the European Social Survey
The BFKL Equation at Next-to-Leading Order and Beyond
On the basis of a renormalization group analysis of the kernel and of the
solutions of the BFKL equation with subleading corrections, we propose and
calculate a novel expansion of a properly defined effective eigenvalue
function. We argue that in this formulation the collinear properties of the
kernel are taken into account to all orders, and that the ensuing
next-to-leading truncation provides a much more stable estimate of hard Pomeron
and of resummed anomalous dimensions.Comment: LaTex, 12 pages, 1 eps figur
Realizing Health Reform's Potential: Women and the Affordable Care Act of 2010
Outlines the 2010 healthcare reform provisions that will benefit women, including subsidized and improved coverage and bans on lifetime caps, rescissions, and rating on gender. Analyzes how each will address women's growing exposure to healthcare costs
The X(3872) boson: Molecule or charmonium
It has been argued that the mystery boson X(3872) is a molecule state
consisting of primarily D0-D0*bar + D0bar-D*0. In contrast, apparent puzzles
and potential difficulties have been pointed out for the charmonium assignment
of X(3872). We examine several aspects of these alternatives by
semiquantitative methods since quantitatively accurate results are often hard
to reach on them. We find that some of the observed properties of X(3872), in
particualr, the binding and the production rates are incompatible with the
molecule interpretation. Despite puzzles and obstacles, X(3872) may fit more
likely to the excited triplet P_1 charmonium than to the molecule after mixing
of cc-bar with DD*-bar +Dbar-D* is taken into account. One simple experimental
test is pointed out for distinguishing between a charmonium and an
isospin-mixed molecule in the neutral B decay.Comment: A few sentences of comment are added. One minor rewording in the
Introduction. Two trivial typos are correcte
Influence of convective transport on tropospheric ozone and its precursors in a chemistry-climate model
The impact of convection on tropospheric O<sub>3</sub> and its precursors has been examined in a coupled chemistry-climate model. There are two ways that convection affects O<sub>3</sub>. First, convection affects O<sub>3</sub> by vertical mixing of O<sub>3</sub> itself. Convection lifts lower tropospheric air to regions where the O<sub>3</sub> lifetime is longer, whilst mass-balance subsidence mixes O<sub>3</sub>-rich upper tropospheric (UT) air downwards to regions where the O<sub>3</sub> lifetime is shorter. This tends to decrease UT O<sub>3</sub> and the overall tropospheric column of O<sub>3</sub>. Secondly, convection affects O<sub>3</sub> by vertical mixing of O<sub>3</sub> precursors. This affects O<sub>3</sub> chemical production and destruction. Convection transports isoprene and its degradation products to the UT where they interact with lightning NO<sub>x</sub> to produce PAN, at the expense of NO<sub>x</sub>. In our model, we find that convection reduces UT NO<sub>x</sub> through this mechanism; convective down-mixing also flattens our imposed profile of lightning emissions, further reducing UT NO<sub>x</sub>. Over tropical land, which has large lightning NO<sub>x</sub> emissions in the UT, we find convective lofting of NO<sub>x</sub> from surface sources appears relatively unimportant. Despite UT NO<sub>x</sub> decreases, UT O<sub>3</sub> production increases as a result of UT HO<sub>x</sub> increases driven by isoprene oxidation chemistry. However, UT O<sub>3</sub> tends to decrease, as the effect of convective overturning of O<sub>3</sub> itself dominates over changes in O<sub>3</sub> chemistry. Convective transport also reduces UT O<sub>3</sub> in the mid-latitudes resulting in a 13% decrease in the global tropospheric O<sub>3</sub> burden. These results contrast with an earlier study that uses a model of similar chemical complexity. Differences in convection schemes as well as chemistry schemes – in particular isoprene-driven changes are the most likely causes of such discrepancies. Further modelling studies are needed to constrain this uncertainty range
Single spin asymmetries in DIS
We consider possible mechanisms for single spin asymmetries in inclusive Deep
Inelastic Scattering (DIS) processes with unpolarized leptons and transversely
polarized nucleons. Tests for the effects of non-zero \bfk_\perp, for the
properties of spin dependent quark fragmentations and for quark helicity
conservation are suggested.Comment: 5 pages, LaTeX, no figures. Revised version, to be published in Phys.
Rev. D. Some equations and statements added to clarify text and notation
Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry
Scanning tunneling microscopy and spectroscopy is used to characterize InAs/GaSb superlattices, grown by molecular-beam epitaxy. Roughness at the interfaces between InAs and GaSb layers is directly observed in the images, and a quantitative spectrum of this roughness is obtained. Electron subbands in the InAs layers are resolved in spectroscopy. Asymmetry between the interfaces of InAs grown on GaSb compared with GaSb grown on In As is seen in voltage-dependent imaging. Detailed
spectroscopic study of the interfaces reveals some subtle differences between the two in terms of their valence-band onsets and conduction-band state density. These differences are interpreted in a model in which the GaSb on InAs interface has an abrupt InSb-like structure, but at the InAs on GaSb interface some Sb grading occurs into the InAs overlayer
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