Electron Multiplying Low-Voltage CCD With Increased Gain

Novel designs for the gain elements in electron multiplying (EM) CCDs have been implemented in a device manufactured in a low voltage CMOS process. Derived with help from TCAD simulations, the designs employ modified gate geometries in order to significantly increase the EM gain over traditional structures. Two new EM elements have been demonstrated with an order of magnitude higher gain than the typical rectangular gate designs, achieved over 100 amplifying stages and without an increase in the electric field. The principles presented in this work can be used in CMOS and CCD imagers employing electron multiplication in order to boost the gain and reduce undesirable effects such as clock-induced charge generation and gain ageing

Quantitative Photo-acoustic Tomography with Partial Data

Photo-acoustic tomography is a newly developed hybrid imaging modality that combines a high-resolution modality with a high-contrast modality. We analyze the reconstruction of diffusion and absorption parameters in an elliptic equation and improve an earlier result of Bal and Uhlmann to the partial date case. We show that the reconstruction can be uniquely determined by the knowledge of 4 internal data based on well-chosen partial boundary conditions. Stability of this reconstruction is ensured if a convexity condition is satisfied. Similar stability result is obtained without this geometric constraint if 4n well-chosen partial boundary conditions are available, where $n$ is the spatial dimension. The set of well-chosen boundary measurements is characterized by some complex geometric optics (CGO) solutions vanishing on a part of the boundary.Comment: arXiv admin note: text overlap with arXiv:0910.250

Quasi-normal modes, bifurcations and non-uniqueness of charged scalar-tensor black holes

In the present paper we study the scalar sector of the quasinormal modes of charged general relativistic, static and spherically symmetric black holes coupled to nonlinear electrodynamics and embedded in a class of scalar-tensor theories. We find that for certain domain of the parametric space there exist unstable quasinormal modes. The presence of instabilities implies the existence of scalar-tensor black holes with primary hair that bifurcate from the embedded general relativistic black-hole solutions at critical values of the parameters corresponding to the static zero-modes. We prove that such scalar-tensor black holes really exist by solving the full system of scalar-tensor field equations for the static, spherically symmetric case. The obtained solutions for the hairy black holes are non-unique and they are in one to one correspondence with the bounded states of the potential governing the linear perturbations of the scalar field. The stability of the non-unique hairy black holes is also examined and we find that the solutions for which the scalar field has zeros are unstable against radial perturbations. The paper ends with a discussion on possible formulations of a new classification conjecture.Comment: 22 pages, 11 figures; v2: typos corrected, comments and references adde

Faint laser quantum key distribution: Eavesdropping exploiting multiphoton pulses

The technological possibilities of a realistic eavesdropper are discussed. Two eavesdropping strategies taking profit of multiphoton pulses in faint laser QKD are presented. We conclude that, as long as storage of Qubits is technically impossible, faint laser QKD is not limited by this security issue, but mostly by the detector noise.Comment: 7 pages, 6 figure

Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias

A new pixel design using pinned photodiode (PPD) in a 180 nm CMOS image sensor (CIS) process has been developed as a proof of principle. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the in-pixel p-wells have been added to the manufacturing process in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The new design exhibits nearly identical electro-optical performance under reverse bias as the reference PPD pixel it is based on, and the leakage current is effectively suppressed. The characterisation results from both front- and back-side illuminated sensor variants show that the epitaxial layer is fully depleted

Image lag optimisation in a 4T CMOS image sensor for the JANUS camera on ESA's JUICE mission to Jupiter

The CIS115, the imager selected for the JANUS camera on ESA’s JUICE mission to Jupiter, is a Four Transistor (4T) CMOS Image Sensor (CIS) fabricated in a 0.18 µm process. 4T CIS (like the CIS115) transfer photo generated charge collected in the pinned photodiode (PPD) to the sense node (SN) through the Transfer Gate (TG). These regions are held at different potentials and charge is transferred from the potential well under PPD to the potential well under the FD through a voltage pulse applied to the TG. Incomplete transfer of this charge can result in image lag, where signal in previous frames can manifest itself in subsequent frames, often appearing as ghosted images in successive readouts. This can seriously affect image quality in scientific instruments and must be minimised. This is important in the JANUS camera, where image quality is essential to help JUICE meet its scientific objectives. This paper presents two techniques to minimise image lag within the CIS115. An analysis of the optimal voltage for the transfer gate voltage is detailed where optimisation of this TG “ON” voltage has shown to minimise image lag in both an engineering model and gamma and proton irradiated devices. Secondly, a new readout method of the CIS115 is described, where following standard image integration, the PPD is biased to the reset voltage level (VRESET) through the transfer gate to empty charge on the PPD and has shown to reduce image lag in the CIS115

Non-equilibrium gas flow and heat transfer in a bottom heated square microcavity

This paper was presented at the 4th Micro and Nano Flows Conference (MNF2014), which was held at University College, London, UK. The conference was organised by Brunel University and supported by the Italian Union of Thermofluiddynamics, IPEM, the Process Intensification Network, the Institution of Mechanical Engineers, the Heat Transfer Society, HEXAG - the Heat Exchange Action Group, and the Energy Institute, ASME Press, LCN London Centre for Nanotechnology, UCL University College London, UCL Engineering, the International NanoScience Community, www.nanopaprika.eu.The flow of a rarefied gas in a square enclosure with a bottom wall at high temperature and the other three walls at the same low temperature is investigated. The flow configuration is simulated both deterministically, using the non-linear Shakhov kinetic model and stochastically, using the DSMC method. Excellent agreement between the two approaches is obtained. The flow is characterized by the reference Knudsen number and the temperature ratio. It is found that along the side walls the velocity of the gas is not necessarily from cold-to-hot regions due to thermal creep, but from hot-to-cold as well. The effect of the flow parameters to this configuration, including the not well theoretically defined flow from hot-to-cold, is investigated and results are provided in the whole range of the Knudsen number for small, moderate and large temperature differences

Transient micro heat transfer in a gas confined between parallel plates due to a sudden increase of the wall temperature

This paper was presented at the 3rd Micro and Nano Flows Conference (MNF2011), which was held at the Makedonia Palace Hotel, Thessaloniki in Greece. The conference was organised by Brunel University and supported by the Italian Union of Thermofluiddynamics, Aristotle University of Thessaloniki, University of Thessaly, IPEM, the Process Intensification Network, the Institution of Mechanical Engineers, the Heat Transfer Society, HEXAG - the Heat Exchange Action Group, and the Energy Institute.The transient heat transfer problem through a rarefied gas confined between parallel plates maintained at different temperatures is investigated. The theoretical formulation is based on the linear BGK kinetic model subject to Maxwell diffuse reflection. The governing time dependent equation is solved by using the discrete velocity method. Results are presented for the number density, macroscopic velocity, heat flux and temperature distributions in the whole range of the Knudsen number. The results are compared with direct Monte Carlo simulations and good agreement is found for small temperature variations.This study is funded from the European Community's Seventh Framework Programme (ITN - FP7/2007-2013) under grant agreement n° 215504

Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing