Nanoscale Electrostatic Control of Oxide Interfaces

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.Comment: Version after peer review; includes additional data on superconductivit

Realization of logically labeled effective pure states for bulk quantum computation

We report the first use of "logical labeling" to perform a quantum computation with a room-temperature bulk system. This method entails the selection of a subsystem which behaves as if it were at zero temperature - except for a decrease in signal strength - conditioned upon the state of the remaining system. No averaging over differently prepared molecules is required. In order to test this concept, we execute a quantum search algorithm in a subspace of two nuclear spins, labeled by a third spin, using solution nuclear magnetic resonance (NMR), and employing a novel choice of reference frame to uncouple nuclei.Comment: PRL 83, 3085 (1999). Small changes made to improve readability and remove ambiguitie