A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET

In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase of carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by the high saturation current. To support our discussion, accurate 2D full band Monte Carlo device simulations with quantum correction have been performed in double gate nMOSFETs for different geometries (gate length down to 10 nm), biases and lattice temperatures. Including the effective carrier temperature is especially important to properly treat the high inversion regime, where previous backscattering models usually fail

A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering

We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view of the actual energy distribution of carriers. The key point is that we do not use the concept of "virtual source". Our model differs from the Lundstrom model in two assumptions: i) the reflection coefficients from the top of the energy barrier to the drain and from top of the barrier to the source are approximately equal (whereas in the Lundstrom model the latter is zero), and ii) inelastic scattering is assumed through a ratio of the average velocity of forward-going carriers to that of backward-going carriers at the top of the barrier kv > 1 (=1 in the Lundstrom model). We support our assumptions with 2D full band Monte Carlo (MC) simulations including quantum corrections in nMOSFETs. We show that our model allows to extract from the electrical characteristics a backscattering coefficient very close to that obtained from the solution of the Boltzmann transport equation, whereas the Lundstrom model overestimates backscattering by up to 40%

Modelling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters

In this paper we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage characteristics it is possible to extract a series of material parameters of alternative gate dielectrics. We have focused on HfO2 and HfSiXOYNZ gate stacks and have extracted information on the nature of localized states in the dielectric responsible for a trap-assisted tunneling current component and for the temperature behavior of the I-V characteristics. Simulations are based on a 1D Poisson-Schrdinger solver capable to provide the pure tunneling current and Trap Assisted Tunneling component. Energy and capture cross section of traps responsible for TAT current have been extracted.Comment: Preprint version of a paper submitted to TED, Transaction on Electron Devices. this is the final reviewed version. This work studies HfO2 and HfSiXOYNZ gate stacks, their C-V and I-V characteristics. A temperature dependent Trap Assisted Tunnneling model was developed to explain the temperature dependence of the I-V chaacteristic

Acoustic neuroma surgery and delayed facial palsy

Delayed onset of facial palsy is possibly an underestimated but distressing complication of acoustic neuroma surgery. The incidence of this complication reported in the literature has varied from 11.7 to 41%. This study reviewed retrospectively 60 primary acoustic neuroma surgeries performed by a single neurotologist. The dee-layed onset of facial dysfunction was defined according to the guidelines described by of Lalwani Butt, Jackler, Pitts and Jingling in 1995. They considered either a deterioration of facial function from normal to abnormal or an increased severity of the degree of facial paralysis, which was grouped using the House-Brackmann scale system. Fifteen of the 60 patients (25%) were found to have a deterioration of facial function. The incidence of delayed facial palsy was not influenced by age, sex or tumor size. The majority of the patients had a favorable prognosis. Only three patients had a grade III-IV facial function at 1 year. It is possible that these latter cases might have benefited from intraoperative meatal facial nerve decompression, as advocated by Sargent, Kartush and Graham

Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs

In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one sub-band approximation and carrier degeneracy. The knowledge of the barrier lowering at the operative bias point in the inversion regime is of fundamental importance in device scaling. At the same time we obtain also an estimate of the backscattering ratio and of the saturation inversion charge. Respect to previously reported works on extraction of transport parameters based on the Lundstrom model, our extraction method is fully consistent with it, whereas other methods make a number of approximations in the calculation of the saturation inversion charge which are inconsistent with the model. The proposed experimental extraction method has been validated and applied to results from device simulation and measurements on short-channel poly-Si/SiON gate nMOSFETs with gate length down to 70 nm. Moreover we propose an extension of the backscattering model to the case of 2D geometries (e.g. bulk MOSFETs). We found that, in this case, the backscattering is governed by the carrier transport in a few nanometers close to the silicon/oxide interface and that the value of the backscattering ratio obtained with a 1D approach can be significantly different from the real 2D value

A Sub-kT/q Voltage Reference Operating at 150 mV

We propose a subthreshold CMOS voltage reference operating with a minimum supply voltage of only 150 mV, which is three times lower than the minimum value presently reported in the literature. The generated reference voltage is only 17.69 mV. This result has been achieved by introducing a temperature compensation technique that does not require the drain-source voltage of each MOSFET to be larger than 4kT/q. The implemented solution consists in two transistors voltage reference with two MOSFETs of the same threshold-type and exploits the dependence of the threshold voltage on transistor size. Measurements performed over a large sample population of 60 chips from two separate batches show a standard deviation of only 0.29 mV. The mean variation of the reference voltage for VDD ranging from 0.15 to 1.8 V is 359.5 μV/V, whereas the mean variation of VREF in the temperature range from 0°C to 120°C is 26.74 μV/°C. The mean power consumption at 25 °C for VDD = 0.15 V is 26.1 pW. The occupied area is 1200 μm2

Understanding the Optimization of the Emitter Coverage in BC-BJ Solar Cells☆

Abstract In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study of optimum emitter coverage ratio (R opt ) to reach maximum performance on back contact-back junction (BC-BJ) solar cells. R opt exhibits a strong dependence on pitch, emitter and back surface field (BSF) doping and bulk resistivity, ranging between 0.6 and 0.95. By fixing BSF doping, emitter doping and bulk resistivity, BSF and emitter width can be optimized independently one another. The optimum BSF width and the optimum emitter width are given by a trade-off between series resistance and electrical shading losses. From the design perspective, focusing on optimizing the BSF and emitter width is more effective than optimizing R at fixed pitch or BSF width

Searching for long faint astronomical high energy transients: a data driven approach

HERMES (High Energy Rapid Modular Ensemble of Satellites) pathfinder is an in-orbit demonstration consisting of a constellation of six 3U nano-satellites hosting simple but innovative detectors for the monitoring of cosmic high-energy transients. The main objective of HERMES Pathfinder is to prove that accurate position of high-energy cosmic transients can be obtained using miniaturized hardware. The transient position is obtained by studying the delay time of arrival of the signal to different detectors hosted by nano-satellites on low Earth orbits. To this purpose, the goal is to achive an overall accuracy of a fraction of a micro-second. In this context, we need to develop novel tools to fully exploit the future scientific data output of HERMES Pathfinder. In this paper, we introduce a new framework to assess the background count rate of a space-born, high energy detector; a key step towards the identification of faint astrophysical transients. We employ a Neural Network (NN) to estimate the background lightcurves on different timescales. Subsequently, we employ a fast change-point and anomaly detection technique to isolate observation segments where statistically significant excesses in the observed count rate relative to the background estimate exist. We test the new software on archival data from the NASA Fermi Gamma-ray Burst Monitor (GBM), which has a collecting area and background level of the same order of magnitude to those of HERMES Pathfinder. The NN performances are discussed and analyzed over period of both high and low solar activity. We were able to confirm events in the Fermi/GBM catalog and found events, not present in Fermi/GBM database, that could be attributed to Solar Flares, Terrestrial Gamma-ray Flashes, Gamma-Ray Bursts, Galactic X-ray flash. Seven of these are selected and analyzed further, providing an estimate of localisation and a tentative classification

Analysis of the impact of doping levels on performance of back contact - back junction solar cells

AbstractIn this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study of the impact of the doping levels on the main figures of merit in the different regions of a crystalline silicon Back-Contact Back-Junction (BC-BJ) solar cell: the emitter, the Back Surface Field (BSF) and the Front Surface Field (FSF). The study is supported by a dark loss analysis which can highlight the contribution of several recombination mechanisms to the total diode saturation current. The efficiency curve as a function of doping level exhibits a bell-shape with a clearly identifiable optimum value for the three regions. The decrease in efficiency observed at lower doping values is explained in terms of higher contact recombination for BSF and emitter, and in terms of higher surface recombination for FSF. The efficiency decrease observed at higher doping values is ascribed to the higher surface recombination for FSF and Auger recombination for all cases