97 research outputs found

    Longitudinal Electrical Near-field generated by a Tapered Coax and studied with a Piezoelectric Film coupled with an Optical Probe

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    International audienceWe investigated the influence of using a conical end on the longitudinal electrical near-field generated by a coaxial cable. Simulations with Finite Integration Technique show that this influence greatly varies along the longitudinal axis. Experimental measurements were also carried out. To that purpose, we designed a new set-up to measure the electrical field in one direction with a spatial resolution of 100 microns in this direction, with nearly no perturbation by the other components of the field. This set-up uses a piezoelectric sintered PZT film and a heterodyne laser probe

    Simultaneous measurement of Young's modulus and Poisson's ratio at microscale with two-modes scanning microdeformation microscopy

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    International audienceIn this paper, we present a technique to simultaneously measure Young's modulus E and Poisson's ratio Μ of an isotropic material at local scale in a single experiment. Using several flexural modes of vibration of the scanning microdeformation microscope, it is possible to decouple the contributions of E and Μ from the first two resonant frequencies, thereby providing access to both the elastic parameters. The proposed approach is applied to SU8 thin films deposited on silicon substrates and provides values consistent with those from the literature

    Temperature measurement of sub-micrometric ICs by scanning thermal microscopy

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    Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometric size. A CMOS device was designed with arrays of resistive lines 0.35”m in width. The array periods are 0.8 ”m and 10”m to study the spatial resolution of the SThM. Integrated Circuits with passivation layers of micrometric and nanometric thicknesses were tested. To enhance signal-to-noise ratio, the resistive lines were heated with an AC current. The passivation layer of nanometric thickness allows us to distinguish the lines when the array period is 10Όm. The results raise the difficulties of the SThM measurement due to the design and the topography of ICs on one hand and the size of the thermal probe on the other hand.ic size. A CMOS device was designed with arrays of resistive lines 0.35”m in width. The array periods are 0.8 ”m and 10”m to study the spatial resolution of the SThM. Integrated Circuits with passivation layers of micrometric and nanometric thicknesses were tested. To enhance signal-to-noise ratio, the resistive lines were heated with an AC current. The passivation layer of nanometric thickness allows us to distinguish the lines when the array period is 10Όm. The results raise the difficulties of the SThM measurement due to the design and the topography of ICs on one hand and the size of the thermal probe on the other hand

    Characterization of layered materials with near-field acoustic microscopy

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