186 research outputs found
Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
We demonstrate a large enhancement of the spin accumulation in monolayer
graphene following electron-beam induced deposition of an amorphous carbon
layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when
graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with
sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when
graphene is deposited directly onto SiO2 and exposed with identical dose. We
attribute the difference to a more efficient carbon deposition in the former
case due to an increase in the presence of compounds containing carbon, which
are released by the PMMA. The amorphous carbon interface can sustain very large
current densities without degrading, which leads to very large spin
accumulations exceeding 500 microeVs at room temperature
Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures
Spin Hall effects have surged as promising phenomena for spin logics
operations without ferromagnets. However, the magnitude of the detected
electric signals at room temperature in metallic systems has been so far
underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the
signal in monolayer graphene/Pt devices when compared to their fully metallic
counterparts. The enhancement stems in part from efficient spin injection and
the large resistivity of graphene but we also observe 100% spin absorption in
Pt and find an unusually large effective spin Hall angle of up to 0.15. The
large spin-to-charge conversion allows us to characterise spin precession in
graphene under the presence of a magnetic field. Furthermore, by developing an
analytical model based on the 1D diffusive spin-transport, we demonstrate that
the effective spin-relaxation time in graphene can be accurately determined
using the (inverse) spin Hall effect as a means of detection. This is a
necessary step to gather full understanding of the consequences of spin
absorption in spin Hall devices, which is known to suppress effective spin
lifetimes in both metallic and graphene systems.Comment: 14 pages, 6 figures. Accepted in 2D Materials.
https://doi.org/10.1088/2053-1583/aa882
Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
We report on electric-field and temperature dependent transport measurements
in exfoliated thin crystals of BiSe topological insulator. At low
temperatures ( K) and when the chemical potential lies inside the bulk
gap, the crystal resistivity is strongly temperature dependent, reflecting
inelastic scattering due to the thermal activation of optical phonons. A linear
increase of the current with voltage is obtained up to a threshold value at
which current saturation takes place. We show that the activated behavior, the
voltage threshold and the saturation current can all be quantitatively
explained by considering a single optical phonon mode with energy meV. This phonon mode strongly interacts with the surface states of
the material and represents the dominant source of scattering at the surface at
high electric fields.Comment: Supplementary Material at:
http://journals.aps.org/prl/supplemental/10.1103/PhysRevLett.112.086601/TIPhonon_SM.pd
Magnon-drag thermopile
arXiv:1203.5628v1Thermoelectric effects in spintronics are gathering increasing attention as a means of managing heat in nanoscale structures and of controlling spin information by using heat flow. Thermal magnons (spin-wave quanta) are expected to play a major role; however, little is known about the underlying physical mechanisms involved. The reason is the lack of information about magnon interactions and of reliable methods to obtain it, in particular for electrical conductors because of the intricate influence of electrons. Here, we demonstrate a conceptually new device that enables us to gather information on magnon–electron scattering and magnon-drag effects. The device resembles a thermopile formed by a large number of pairs of ferromagnetic wires placed between a hot and a cold source and connected thermally in parallel and electrically in series. By controlling the relative orientation of the magnetization in pairs of wires, the magnon drag can be studied independently of the electron and phonon-drag thermoelectric effects. Measurements as a function of temperature reveal the effect on magnon drag following a variation of magnon and phonon populations. This information is crucial to understand the physics of electron–magnon interactions, magnon dynamics and thermal spin transport.This research was supported by the Spanish Ministerio de Ciencia e Innovación, MICINN (MAT2010-18065) and by the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement NANOFUNCTION no 257375.Peer Reviewe
Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene
We investigate hot carrier propagation across graphene using an electrical
nonlocal injection/detection method. The device consists of a monolayer
graphene flake contacted by multiple metal leads. Using two remote leads for
electrical heating, we generate a carrier temperature gradient that results in
a measurable thermoelectric voltage VNL across the remaining (detector) leads.
Due to the nonlocal character of the measurement, VNL is exclusively due to the
Seebeck effect. Remarkably, a departure from the ordinary relationship between
Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures,
representing a fingerprint of hot-carrier dominated thermoelectricity. By
studying VNL as a function of bias, we directly determine the carrier
temperature and the characteristic cooling length for hot-carrier propagation,
which are key parameters for a variety of new applications that rely on
hot-carrier transport
Spin communication over 30 m long channels of chemical vapor deposited graphene on SiO
We demonstrate a high-yield fabrication of non-local spin valve devices with
room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as
long as 9 m in platinum-based chemical vapor deposition (Pt-CVD)
synthesized single-layer graphene on SiO/Si substrates. The spin-lifetime
systematically presents a marked minimum at the charge neutrality point, as
typically observed in pristine exfoliated graphene. However, by studying the
carrier density dependence beyond n ~ 5 x 10 cm, via
electrostatic gating, it is found that the spin lifetime reaches a maximum and
then starts decreasing, a behavior that is reminiscent of that predicted when
the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and
relaxation lengths compare well with state-of-the-art results using exfoliated
graphene on SiO/Si, being a factor two-to-three larger than the best values
reported at room temperature using the same substrate. As a result, the spin
signal can be readily measured across 30 m long graphene channels. These
observations indicate that Pt-CVD graphene is a promising material for
large-scale spin-based logic-in-memory applications
Enhanced spin signal in nonlocal devices based on a ferromagnetic CoFeAl alloy
The Creative Commons Attribution 3.0 Unported License to their work.We systematically study the nonlocal spin signal in lateral spin valves based on CoFeAl injectors and detectors and compare the results with identically fabricated devices based on CoFe. The devices are fabricated by electron beam evaporation at room temperature. We observe a > 10-fold enhancement of the spin signal in the CoFeAl devices. We explain this increase as due to the formation of a highly spin-polarized Co2FeAl Heusler compound with large resistivity. These results suggest that Heusler compounds are promising candidates as spin polarized electrodes in lateral spin devices for future spintronic applications.We acknowledge the financial support from the Spanish Ministerio de Ciencia e Innovación, MICINN (MAT2010-18065, FIS2009-06671-E, and GICSERV program “Access to ICTS integrated nano- and microelectronics cleanroom”). J.V.d.V. acknowledges the support from FWO-VL.Peer Reviewe
Investigating the spin-orbit interaction in van der Waals heterostructures by means of the spin relaxation anisotropy
Graphene offers long spin propagation and, at the same time, a versatile platform to engineer its physical properties. Proximity-induced phenomena, taking advantage of materials with large spin-orbit coupling or that are magnetic, can be used to imprint graphene with large spin-orbit coupling and magnetic correlations. However, full understanding of the proximitized graphene and the consequences on the spin transport dynamics requires the development of unconventional experimental approaches. The investigation of the spin relaxation anisotropy, defined as the ratio of lifetimes for spins pointing out of and in the graphene plane, is an important step in this direction. This review discusses various methods for extracting the spin relaxation anisotropy in graphene-based devices. Within the experimental framework, current understanding on spin transport dynamics in single-layer and bilayer graphene is presented. Due to increasing interest, experimental results in graphene in proximity with high spin-orbit layered materials are also reviewed
Spin precession in anisotropic media
We generalize the diffusive model for spin injection and detection in
nonlocal spin structures to account for spin precession under an applied
magnetic field in an anisotropic medium, for which the spin lifetime is not
unique and depends on the spin orientation.We demonstrate that the spin
precession (Hanle) line shape is strongly dependent on the degree of anisotropy
and on the orientation of the magnetic field. In particular, we show that the
anisotropy of the spin lifetime can be extracted from the measured spin signal,
after dephasing in an oblique magnetic field, by using an analytical formula
with a single fitting parameter. Alternatively, after identifying the
fingerprints associated with the anisotropy, we propose a simple scaling of the
Hanle line shapes at specific magnetic field orientations that results in a
universal curve only in the isotropic case. The deviation from the universal
curve can be used as a complementary means of quantifying the anisotropy by
direct comparison with the solution of our generalized model. Finally, we
applied our model to graphene devices and find that the spin relaxation for
graphene on silicon oxide is isotropic within our experimental resolution
Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry
The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge to spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic fields orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects.We acknowledge support of the European Union's Horizon 2020 FET-PROACTIVE project TOCHA under Grant No. 824140 and of the Spanish Research Agency (AEI), Ministry of Science and Innovation, under Contracts No. PID2019-111773RB-I00/AEI/10.13039/501100011033, and SEV-2017-0706 Severo Ochoa. J F S acknowledges support from AEIunder contract RYC2019-028368-I/AEI/10.13039/50110001103, W S T and M V C from the European Union Horizon 2020 research and innovation program, Grant No. 881603 (Graphene Flagship), and I F A of a fellowship from 'la Caixa' Foundation (ID 100010434) with code LCF/BQ/DI18/11660030 and of H2020 Marie Skłodowska-Curie Grant No. 713673. J S acknowledges funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No. 754558
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