71 research outputs found
Transport and optical gaps and energy band alignment at organic-inorganic interfaces
International audienc
Diamond (111) surface reconstruction and epitaxial graphene interface
The evolution of the diamond (111) surface as it undergoes reconstruction and
subsequent graphene formation is investigated with angle-resolved photoemission
spectroscopy, low energy electron diffraction, and complementary density
functional theory calculations. The process is examined starting at the
C(111)-(2x1) surface reconstruction that occurs following detachment of the
surface adatoms at 920 {\deg}C, and continues through to the liberation of the
reconstructed surface atoms into a free-standing monolayer of epitaxial
graphene at temperatures above 1000 {\deg}C. Our results show that the
C(111)-(2x1) surface is metallic as it has electronic states that intersect the
Fermi-level. This is in strong agreement with a symmetrically {\pi}-bonded
chain model and should contribute to resolving the controversies that exist in
the literature surrounding the electronic nature of this surface. The graphene
formed at higher temperatures exists above a newly formed C(111)-(2\times1)
surface and appears to have little substrate interaction as the Dirac-point is
observed at the Fermi-level. Finally, we demonstrate that it is possible to
hydrogen terminate the underlying diamond surface by means of plasma processing
without removing the graphene layer, forming a graphene-semiconductor
interface. This could have particular relevance for doping the graphene formed
on the diamond (111)surface via tuneable substrate interactions as a result of
changing the terminating species at the diamond-graphene interface by plasma
processing.Comment: 10 pages, 4 figure
Spin-valley locking in the normal state of a transition-metal dichalcogenide superconductor
We gratefully acknowledge support from the Engineering and Physical Sciences Research Council, UK (work at St Andrews under Grant No. EP/I031014/1 and work at Warwick under Grant No. EP/M028771/1) and the International Max Planck partnership. PDCK acknowledges support from the Royal Society through a University Research Fellowship. MSB was supported by the Grant-in-Aid for Scientific Research (S) (No. 24224009) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan. LB, JR, and VS acknowledge studentship funding from EPSRC through grant nos. EP/G03673X/1, EP/L505079/1, and EP/L015110/1, respectively. The experiments at MAX IV Laboratory were made possible through funding from the Swedish Research Council and the Knut and Alice Wallenberg Foundation.Metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing from a charge density-wave state. The interplay between such phases is thought to play a critical role in the unconventional superconductivity of cuprates, Fe-based, and heavy-fermion systems, yet even for the more moderately-correlated TMDCs, their nature andorigins have proved controversial. Here, we study a prototypical example, 2H-NbSe2, by spin-and angle-resolved photoemission and first-principles theory. We find that the normal state,from which its hallmark collective phases emerge, is characterised by quasiparticles whose spin is locked to their valley pseudospin. This results from a combination of strong spin-orbit interactions and local inversion symmetry breaking, while interlayer coupling further drives a rich three-dimensional momentum dependence of the underlying Fermi surface spintexture. These findings necessitate a re-investigation of the nature of charge order and superconducting pairing in NbSe2 and related TMDCs.Publisher PDFPeer reviewe
Low-Temperature Growth of Graphene on a Semiconductor
The industrial realization of graphene has so far been limited by challenges
related to the quality, reproducibility, and high process temperatures required
to manufacture graphene on suitable substrates. We demonstrate that epitaxial
graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with
an onset of graphitization starting around . From the
chemical reaction between SiC and thin films of Fe or Ru,
carbon is liberated from the SiC crystal and converted to
carbon at the surface. The quality of the graphene is demonstrated using
angle-resolved photoemission spectroscopy and low-energy electron diffraction.
Furthermore, the orientation and placement of the graphene layers relative to
the SiC substrate is verified using angle-resolved absorption spectroscopy and
energy-dependent photoelectron spectroscopy, respectively. With subsequent
thermal treatments to higher temperatures, a steerable diffusion of the metal
layers into the bulk SiC is achieved. The result is graphene supported on
magnetic silicide or optionally, directly on semiconductor, at temperatures
ideal for further large-scale processing into graphene based device structures.Comment: 10 pages, 4 figures, 51 reference
A Simplified Method for Patterning Graphene on Dielectric Layers
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics
The effects of customer equity drivers on loyalty across services industries and firms
Customer equity drivers (CEDs)—value equity, brand equity, and relationship equity—positively affect loyalty intentions, but this effect varies across industries and firms. We empirically examine potential industry and firm characteristics that explain why the CEDs–loyalty link varies across services industries and firms in the Netherlands. The results show that (1) some previously assumed industry and firm characteristics have moderating effects while others do not and (2) firm-level advertising expenditures constitute the most crucial moderator because they influence all three loyalty strategies (significant for value equity and brand equity; marginally significant for relationship equity), while three industry contexts (i.e., innovative markets, visibility to others, and complexity of purchase decisions) each influence two of the three loyalty strategies. Our results clearly show that specific industry and firm characteristics affect the effectiveness of specific loyalty strategies
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