XPS及びAESによる層状半導体GaSeの酸化過程の研究

The oxidation process of layered compound Ca Se which has no dangling bond on the cleaved surface has been studied by XPS and AES techniques. At room temperature, the cleaved surface is not oxidized in oxvgen gas atmosphere. By Ar ion sputtering, the surface becomes to show the behavior of metallic Ca due to the dissipation of the first sublayer of Se in a primitive layer Se-Ca-Ca-Se. The thin layer of the metallic Ca is easily oxidized. In the case of thermal oxidation of cleaved Ca Se in air atmosphere, the oxygen diffuses into the primitive layer and combines with Ca, which causes the severance of the intralayer bonding between Se and Ca atoms. At temperature higher than 450℃, the oxygen is also intercalated between the primitive layers from the sides perpendicular to the layers. No Se oxides are observed under any of the oxidation conditions

RUNX1-dependent RAG1 deposition instigates human TCR-δ locus rearrangement

V(D)J recombination of TCR loci is regulated by chromatin accessibility to RAG1/2 proteins, rendering RAG1/2 targeting a potentially important regulator of lymphoid differentiation. We show that within the human TCR-α/δ locus