Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods

Two routes for the fabrication of bulk GaN microcavities embedded between two dielectric mirrors are described, and the optical properties of the microcavities thus obtained are compared. In both cases, the GaN active layer is grown by molecular beam epitaxy on (111) Si, allowing use of selective etching to remove the substrate. In the first case, a three period Al0.2Ga0.8N / AlN Bragg mirror followed by a lambda/2 GaN cavity are grown directly on the Si. In the second case, a crack-free 2,mu m thick GaN layer is grown, and progressively thinned to a final thickness of lambda. Both devices work in the strong coupling regime at low temperature, as evidenced by angle-dependent reflectivity or transmission experiments. However, strong light-matter coupling in emission at room temperature is observed only for the second one. This is related to the poor optoelectronic quality of the active layer of the first device, due to its growth only 250 nm above the Si substrate and its related high defect density. The reflectivity spectra of the microcavities are well accounted for by using transfer matrix calculations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3477450

Voltage controlled terahertz transmission through GaN quantum wells

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas

High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates.

A study of the high temperature DC performance of nitride high electron mobility transistors (HEMTs) on Si(111) and sapphire substrates with different gate lengths is reported. All single gate transistors decrease their drain current (ID) and transconductance (gm) from room temperature (RT) up to 350 ºC, mainly due to the electron mobility reduction by optical phonon scattering. At RT, HEMTs on Si(111) present higher ID and gm than transistors on sapphire, probably related to their lower self-heating. As devices are heated, these differences tend to disappear, indicating that the substrate thermal conductivity becomes less important. Compact devices have low relative reduction in ID and gm values with temperature, since shorter gate lengths lead to higher fields under the gate and lower temperature dependence of the drift velocit

Does community-based education increase students' motivation to practice community health care? - a cross sectional study

<p>Abstract</p> <p>Background</p> <p>Community-based education has been introduced in many medical schools around the globe, but evaluation of instructional quality has remained a critical issue. Community-based education is an approach that aims to prepare students for future professional work at the community level. Instructional quality should be measured based on a program's outcomes. However, the association between learning activities and students' attitudes is unknown. The purpose of this study was to clarify what learning activities affect students' attitudes toward community health care.</p> <p>Methods</p> <p>From 2003 to 2009, self-administered pre- and post-questionnaire surveys were given to 693 fifth-year medical students taking a 2-week clinical clerkship. Main items measured were student attitudes, which were: "I think practicing community health care is worthwhile" ("worthwhile") and "I am confident about practicing community health care" ("confidence") using a visual analogue scale (0-100). Other items were gender, training setting, and learning activities. We analyzed the difference in attitudes before and after the clerkships by paired <it>t </it>test and the factors associated with a positive change in attitude by logistic regression analysis.</p> <p>Results</p> <p>Six hundred forty-five students (93.1%), 494 (76.6%) male and 151(23.4%) female, completed the pre- and post-questionnaires. The VAS scores of the students' attitudes for "worthwhile" and "confidence" after the clerkship were 80.2 ± 17.4 and 57.3 ± 20.1, respectively. Both of the scores increased after the clerkship. Using multivariate logistic regression analysis, "health education" was associated with a positive change for both attitudes of "worthwhile" (adjusted RR: 1.71, 95% CI: 1.10-2.66) and "confidence" (1.56, 1.08-2.25).</p> <p>Conclusions</p> <p>Community-based education motivates students to practice community health care. In addition, their motivation is increased by the health education activity. Participating in this activity probably produces a positive effect and improves the instructional quality of the program based on its outcomes.</p

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor ( I ds > 1 A mm −1 ) to be defined (0.5 A mm −1 at 300 °C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale

The experience and management of neck pain in general practice: the patients’ perspective

The objective of this study is to investigate the perspective and expectation of patients presenting with neck pain in general practice. The study design is a qualitative analysis of patient interviews and was conducted in a primary care setting in Germany. Twenty patients aged 20–78, according to theoretical sampling were included in the study. Patients tried to cope autonomously with the situation and consulted GPs only if their self-help had failed. When patients asked for external help, they usually focused on somatic treatment options such as massage, physiotherapy or injections. Most patients reported to have experiences with somatic therapies; however, they felt that some or all of these treatments were inefficient or led only to short-time improvements. Patients often avoided psychosocial themes when talking to doctors for fear of being branded as ‘neurotic’. Although neck pain is difficult to manage and a burden for patients, they have obviously found a way of both living with their pain and a pragmatic approach of talking about their symptoms with their doctor. According to the patients’ statements, the interaction between doctor and patient seems to be rather distant, ensuring that both sides avoid any issues that might touch upon psychological aspects of neck pain

Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of layers in the distributed Bragg reflectors. Most importantly, microreflectivity spectra recorded with a spot size in the order of 2 lm show a negligible photonic disorder (well below 1 meV), leading to local quality factors equivalent to those obtained by macroreflectivity. The anisotropic character of the nonpolar heterostructures manifests itself both in the surface features, elongated parallel to the in-plane c direction, and in the optical spectra, with two cavity modes being observed at different energies for orthogonal polarizations