Design of a Quadruple Band-Notched Ultra-Wideband (UWB) Antenna Using Curled C-Shaped Structures and Interdigital Inductance Slots

In this paper, a novel ultra-wideband (UWB) printed antenna with quadruple band-notched characteristics is proposed and investigated. The quadruple band rejections are achieved by etching two interdigital capacitance slots on each side of the ground plane, embedding a curled C-shaped slot on the circle patch, and adding a curled split-ring resonator on the backside of the antenna. Interdigital inductance slots can obtain a narrower notched band than general structures due to their high inductance, thereby preserving some valuable frequencies. Adjusting the tail branch’s length and distance of the curled C-shaped slot and the curled split-ring resonator can control the notch frequency and width. Finally, the proposed antenna operates from 2.9–11 GHz (VSWR < 2) with four band stops (VSWR > 2) for rejecting WiMAX, WLAN, and downlink of X-band satellite communication. Furthermore, the difference between the experimental results and the expected value is less than 3%. The proposed antenna can accurately filter out narrow-band signals

Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage

Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification

In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro-electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated, measured and analyzed. The proposed RF MEMS switch mainly consists of a MEMS metallic beam, coplanar waveguide (CPW) transmission line, dielectric layer and metal–insulator–metal (MIM) fixed capacitors. The measured results indicate that the insertion loss is better than 0.5 dB at 32 GHz, and the isolation is more than 35 dB at the resonant frequency. From the fitted results, the capacitance ratio is 246.3. Compared with traditional MEMS capacitive switches, this proposed MEMS switch exhibits a high capacitance ratio and provides a wonderful solution for cutting-edge performance in 5G and other high-performance applications

Characteristic Mode Analysis of a Ka-Band CPW-Slot-Couple Fed Patch Antenna with Enhanced Bandwidth and Gain

A Ka-band CPW-Slot-Couple (CSC) fed microstrip antenna with enhanced bandwidth and gain is presented in this paper. To simplify the feed network, the matching slots are designed at the end of the CPW. Consequently, the patch antenna is designed with a low profile, which has a size of 7.2 × 32.6 × 0.508 mm3. Characteristic mode analysis (CMA) is applied to illustrate the principle of the enhancement of the band with the form characteristic mode point of view. A slot based on inductive loading is employed on the parasitic patch to move the resonant frequency of CM3 to the resonant frequency of CM2 for enhanced bandwidth, which avoids introducing additional impedance matching networks. The measured results show that the bandwidth of the proposed monolayer antenna is 14.18% from 24.84 to 28.6 GHz and the peak gain is 7.9 dBi. Due to its attractive properties of low profile, compact configuration, wide band, and high gain, the proposed antenna could be applied to miniaturized millimeter-wave applications

Characteristic Mode Analysis of a Ka-Band CPW-Slot-Couple Fed Patch Antenna with Enhanced Bandwidth and Gain

A Ka-band CPW-Slot-Couple (CSC) fed microstrip antenna with enhanced bandwidth and gain is presented in this paper. To simplify the feed network, the matching slots are designed at the end of the CPW. Consequently, the patch antenna is designed with a low profile, which has a size of 7.2 × 32.6 × 0.508 mm3. Characteristic mode analysis (CMA) is applied to illustrate the principle of the enhancement of the band with the form characteristic mode point of view. A slot based on inductive loading is employed on the parasitic patch to move the resonant frequency of CM3 to the resonant frequency of CM2 for enhanced bandwidth, which avoids introducing additional impedance matching networks. The measured results show that the bandwidth of the proposed monolayer antenna is 14.18% from 24.84 to 28.6 GHz and the peak gain is 7.9 dBi. Due to its attractive properties of low profile, compact configuration, wide band, and high gain, the proposed antenna could be applied to miniaturized millimeter-wave applications

Linking H3K79 trimethylation to Wnt signaling through a novel Dot1-containing complex (DotCom)

Epigenetic modifications of chromatin play an important role in the regulation of gene expression. KMT4/Dot1 is a conserved histone methyltransferase capable of methylating chromatin on Lys79 of histone H3 (H3K79). Here we report the identification of a multisubunit Dot1 complex (DotCom), which includes several of the mixed lineage leukemia (MLL) partners in leukemia such as ENL, AF9/MLLT3, AF17/MLLT6, and AF10/MLLT10, as well as the known Wnt pathway modifiers TRRAP, Skp1, and β-catenin. We demonstrated that the human DotCom is indeed capable of trimethylating H3K79 and, given the association of β-catenin, Skp1, and TRRAP, we investigated, and found, a role for Dot1 in Wnt/Wingless signaling in an in vivo model system. Knockdown of Dot1 in Drosophila results in decreased expression of a subset of Wingless target genes. Furthermore, the loss of expression for the Drosophila homologs of the Dot1-associated proteins involved in the regulation of H3K79 shows a similar reduction in expression of these Wingless targets. From yeast to human, specific trimethylation of H3K79 by Dot1 requires the monoubiquitination of histone H2B by the Rad6/Bre1 complex. Here, we demonstrate that depletion of Bre1, the E3 ligase required for H2B monoubiquitination, leads specifically to reduced bulk H3K79 trimethylation levels and a reduction in expression of many Wingless targets. Overall, our study describes for the first time the components of DotCom and links the specific regulation of H3K79 trimethylation by Dot1 and its associated factors to the Wnt/Wingless signaling pathway

Viability of remanufacturing practice: a strategic decision making framework for Chinese auto-parts companies

Remanufacturing is a sustainable and proven profitable practice in the western world. Research on remanufacturing practices is relatively unexploited in China, despite being the “global factory” and both the world's largest automobile manufacturer and vehicle market. The increasing amount of automotive output and End-of-Life vehicles (ELVs) in China provides Chinese auto-parts companies with significant potential for environmentally conscious manufacturing and product recovery. Using case studies, we have investigated the status of remanufacturing practices, key determinants for strategic decision making to remanufacture in-house, outsource remanufacturing and/or not to engage in remanufacturing in Chinese auto parts firms using an analytical hierarchy process (AHP). This study suggests that Chinese firms are keen to adopt remanufacturing practice in-house compared to outsourcing despite a lack of technical and managerial capabilities