Engineering Knowledge for Assistive Living

This paper introduces a knowledge based approach to assistive living in smart homes. It proposes a system architecture that makes use of knowledge in the lifecycle of assistive living. The paper describes ontology based knowledge engineering practices and discusses mechanisms for exploiting knowledge for activity recognition and assistance. It presents system implementation and experiments, and discusses initial results

Ontology-based Activity Recognition Framework and Services

This paper introduces an ontology-based integrated framework for activity modeling, activity recognition and activity model evolution. Central to the framework is ontological activity modeling and semantic-based activity recognition, which is supported by an iterative process that incrementally improves the completeness and accuracy of activity models. In addition, the paper presents a service-oriented architecture for the realization of the proposed framework which can provide activity context-aware services in a scalable distributed manner. The paper further describes and discusses the implementation and testing experience of the framework and services in the context of smart home based assistive living

Specifying, detecting and analysing emergent behaviours in multi-level agent-based simulations

We introduce a method for analysing emergent behaviours in multi-agent simulations using complex events. Complex events are composed of interrelated events, and they can be defined at any level of spatio-temporal abstraction (equal to or above the lowest level of abstraction given by the model). Minimal types of complex events define sets, which are equated with particular emergent behaviours and can be detected in simulation. Since complex events are derived from the agent-based model itself, they provide significant benefits when compared with traditional state-aggregation methods. First, they provide a method of specifying emergent behaviour, so that such behaviour can be monitored. Second, they provide a mechanism that retains the underlying structure of that behaviour. This latter property supports analysis of the mechanisms at lower levels that give rise to emergent behaviours, and identification of patterns between levels. In other words, multi-agent simulations become less 'opaque' [1]

Numerical modeling of transient characteristics of photovoltage in Schottky contacts

Numerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.published_or_final_versio

Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces

The measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.published_or_final_versio

Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact

For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics.published_or_final_versio

Characterization of Pt-Si interface by spectroscopic ellipsometry

Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.published_or_final_versio

Ultrasonic extraction of flavonoids and phenolics from loquat (Eriobotrya japonica Lindl.) flowers

Ethanol was used to extract flavonoids and phenolics from loquat (Eriobotrya japonica Lindl. cv. Ruantiaobaisha) flowers with ultrasonic pharmaceutical managing machine. Single-factor and orthogonal experiment were used to investigate the optimum extraction condition. The results showed that, the combination of 30°C, 80 min, 60% ethanol and 1:40 material ratio was optimum extraction condition with the highest yields of flavonoids and phenolics at 47 kHz/500 W. Under the optimum extraction condition, two consecutive extractions was enough, the extraction rates of flavonoids and phenolics were all more than 90%, with the contents of 10.59 and 102.02 mg/g dry weight, respectively.Key words: Eriobotrya japonica, flower, flavonoids, phenolics, ultrasonic extraction

Post-stress interface trap generation induced by oxide-field stress with FN injection

Interface trap generation in nMOS transistors during both stressing and post-stress periods under the conditions of oxide field (dynamic and dc) stress with FN injection is investigated with charge pumping technique. In contrast to the post-stress interface trap generation induced by hot carrier stress which is a logarithmical function of post-stress time, the poststress interface trap generation induced by oxide-field stress with FN injection first increases with post-stress time but then becomes saturated. The mechanisms for the interface trap generation in both stressing and post-stress periods are described. © 1998 IEEE.published_or_final_versio