Buried double CuO chains in YBa2_2Cu4_4O8_8 uncovered by nano-ARPES

The electron dynamics in the CuO chains has been elusive in Y-Ba-Cu-O cuprate systems by means of standard angle-resolved photoemission spectroscopy (ARPES); cleaved sample exhibits areas terminated by both CuO-chain or BaO layers, and the size of a typical beam results in ARPES signals that are superposed from both terminations. Here, we employ spatially-resolved ARPES with submicrometric beam (nano-ARPES) to reveal the surface-termination-dependent electronic structures of the double CuO chains in YBa$_2$Cu$_4$O$_8$. We present the first observation of sharp metallic dispersions and Fermi surfaces of the double CuO chains buried underneath the CuO$_2$-plane block on the BaO terminated surface. While the observed Fermi surfaces of the CuO chains are highly one-dimensional, the electrons in the CuO-chains do not undergo significant electron correlations and no signature of a Tomonaga-Luttinger liquid nor a marginal Fermi liquid is found. Our works represent an important experimental step toward understanding of the charge dynamics and provides a starting basis for modelling the high-$T_c$ superconductivity in YBCO cuprate systems.Comment: 10 pages, 5 figures including supplementary material (4 pages, 2 figures

Observation of band crossings protected by nonsymmorphic symmetry in the layered ternary telluride Ta3SiTe6

We have performed angle-resolved photoemission spectroscopy of layered ternary telluride Ta3SiTe6 which is predicted to host nodal lines associated with nonsymmorphic crystal symmetry. We found that the energy bands in the valence-band region show Dirac-like dispersions which present a band degeneracy at the R point of the bulk orthorhombic Brillouin zone. This band degeneracy extends one-dimensionally along the whole SR high-symmetry line, forming the nodal lines protected by the glide mirror symmetry of the crystal. We also observed a small band splitting near EF which supports the existence of hourglass-type dispersions predicted by the calculation. The present results provide an excellent opportunity to investigate the interplay between exotic nodal fermions and nonsymmorphic crystal symmetry.Comment: 6 pages, 4 figure

Population Inversion in Monolayer and Bilayer Graphene

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.Comment: 18 pages, 6 figure

Spectral signatures of a unique charge density wave in Ta2_2NiSe7_7

Charge Density Waves (CDW) are commonly associated with the presence of near-Fermi level states which are separated from others, or "nested", by a wavector of $\mathbf{q}$. Here we use Angle-Resolved Photo Emission Spectroscopy (ARPES) on the CDW material Ta$_2$NiSe$_7$ and identify a total absence of any plausible nesting of states at the primary CDW wavevector $\mathbf{q}$. Nevertheless we observe spectral intensity on replicas of the hole-like valence bands, shifted by a wavevector of $\mathbf{q}$, which appears with the CDW transition. In contrast, we find that there is a possible nesting at $\mathbf{2q}$, and associate the characters of these bands with the reported atomic modulations at $\mathbf{2q}$. Our comprehensive electronic structure perspective shows that the CDW-like transition of Ta$_2$NiSe$_7$ is unique, with the primary wavevector $\mathbf{q}$ being unrelated to any low-energy states, but suggests that the reported modulation at $\mathbf{2q}$, which would plausibly connect low-energy states, might be more important for the overall energetics of the problem

Phonon-pump XUV-photoemission-probe in graphene: evidence for non-adiabatic heating of Dirac carriers by lattice deformation

We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV) pulses, we measure the response of the Dirac electrons near the K-point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E1u vibration is driven, which we use to explain the anomalous dynamics observed in the experiment.Comment: 16 pages, 8 figure

One-dimensional electronic states in a natural misfit structure

Misfit compounds are thermodynamically stable stacks of two-dimensional materials, forming a three-dimensional structure that remains incommensurate in one direction parallel to the layers. As a consequence, no true bonding is expected between the layers, with their interaction being dominated by charge transfer. In contrast to this well-established picture, we show that interlayer coupling can strongly influence the electronic properties of one type of layer in a misfit structure, in a similar way to the creation of modified band structures in an artificial moir\'e structure between two-dimensional materials. Using angle-resolved photoemission spectroscopy with a micron-scale light focus, we selectively probe the electronic properties of hexagonal NbSe$_2$ and square BiSe layers that terminate the surface of the (BiSe)$_{1+\delta}$NbSe$_2$ misfit compound. We show that the band structure in the BiSe layers is strongly affected by the presence of the hexagonal NbSe$_2$ layers, leading to quasi one-dimensional electronic features. The electronic structure of the NbSe$_2$ layers, on the other hand, is hardly influenced by the presence of the BiSe. Using density functional theory calculations of the unfolded band structures, we argue that the preferred modification of one type of bands is mainly due to the atomic and orbital character of the states involved, opening a promising way to design novel electronic states that exploit the partially incommensurate character of the misfit compounds

Snapshots of non-equilibrium Dirac carrier distributions in graphene

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors.Comment: 16 pages, 7 figure

Probing the structure and dynamics of molecular clusters using rotational wavepackets

The chemical and physical properties of molecular clusters can heavily depend on their size, which makes them very attractive for the design of new materials with tailored properties. Deriving the structure and dynamics of clusters is therefore of major interest in science. Weakly bound clusters can be studied using conventional spectroscopic techniques, but the number of lines observed is often too small for a comprehensive structural analysis. Impulsive alignment generates rotational wavepackets, which provides simultaneous information on structure and dynamics, as has been demonstrated successfully for isolated molecules. Here, we apply this technique for the firsttime to clusters comprising of a molecule and a single helium atom. By forcing the population of high rotational levels in intense laser fields we demonstrate the generation of rich rotational line spectra for this system, establishing the highly delocalised structure and the coherence of rotational wavepacket propagation. Our findings enable studies of clusters of different sizes and complexity as well as incipient superfluidity effects using wavepacket methods.Comment: 5 pages, 6 figure

Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene

In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.Comment: 9 pages, 4 figure