First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.Comment: 5 pages and 4 figures. Supplemental material: 2 pages, 2 figure

Scanning tunneling spectroscopy of layers of superconducting 2H-TaSe2_\textbf{2}: Evidence for a zero bias anomaly in single layers

We report a characterization of surfaces of the dichalcogenide TaSe$_2$ using scanning tunneling microscopy and spectroscopy (STM/S) at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero bias peak on top of Se atoms to a gap in between Se atoms. The zero bias peak is additionally modulated by the commensurate $3a_0 \times 3a_0$ charge density wave of 2H-TaSe$_2$. Multilayers of 2H-TaSe$_2$ show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.Comment: 10 pages, 10 figure

Strong enhancement of superconductivity at high pressures within the charge-density-wave states of 2H-TaS 2 and 2H-TaSe 2

We present measurements of the superconducting and charge density wave critical temperatures (Tc and TCDW) as a function of pressure in the transition metal dichalchogenides 2H-TaSe2 and 2H-TaS2. Resistance and susceptibility measurements show that Tc increases from temperatures below 1 K up to 8.5 K at 9.5 GPa in 2H-TaS2 and 8.2 K at 23 GPa in 2H-TaSe2. We observe a kink in the pressure dependence of TCDW at about 4 GPa that we attribute to the lock-in transition from incommensurate CDW to commensurate CDW. Above this pressure, the commensurate TCDW slowly decreases coexisting with superconductivity within our full pressure range.Comment: Published in Phys. Rev B 93, 184512 (2016

Evaluation of electrode and solution area-based resistances enables quantitative comparisons of factors impacting microbial fuel cell performance

Direct comparisons of microbial fuel cells based on maximum power densities are hindered by different reactor and electrode sizes, solution conductivities, and materials. We propose an alternative method here, the electrode potential slope (EPS) analysis, to enable quantitative comparisons based on anodeand cathode area-based resistances and operating potentials. Using EPS analysis, the brush anode resistance (RAn = 10.6 ± 0.5 mΩ m2) was shown to be 28% lower than the resistance of a 70% porosity diffusion layer (70% DL) cathode (RCat = 14.8 ± 0.9 mΩ m2) and 24% lower than the solution resistance (RΩ = 14 mΩ m2) (acetate in a 50 mM phosphate buffer solution). Using a less porous cathode (30% DL) did not impact the cathode resistance but did reduce the cathode performance due to a lower operating potential. With low conductivity domestic wastewater (RΩ = 87 mΩ m2), both electrodes had higher resistances [RAn = 75 ± 9 mΩ m2, and RCat = 54 ± 7 mΩ m2 (70% DL)]. Our analysis of the literature using EPS analysis shows how electrode resistances can easily be quantified to compare system performance when the electrode distances are changed or the sizes of the electrodes are different

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals

Domain size effects on the dynamics of a charge density wave in 1T-TaS2

Recent experiments have shown that the high temperature incommensurate (I) charge density wave (CDW) phase of 1T-TaS2 can be photoinduced from the lower temperature, nearly commensurate (NC) CDW state. Here we report a time-resolved x-ray diffraction study of the growth process of the photoinduced I-CDW domains. The layered nature of the material results in a marked anisotropy in the size of the photoinduced domains of the I-phase. These are found to grow self-similarly, their shape remaining unchanged throughout the growth process. The photoinduced dynamics of the newly formed I-CDW phase was probed at various stages of the growth process using a double pump scheme, where a first pump creates I-CDW domains and a second pump excites the newly formed I-CDW state. We observe larger magnitudes of the coherently excited I-CDW amplitude mode in smaller domains, which suggests that the incommensurate lattice distortion is less stable for smaller domain sizes.Comment: 8 pages, 8 figure

Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.Comment: Highlight in Advanced Functional Materials 18, 1-4 (2008) doi : 10.1002/adfm.20080055